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In this paper, we present the results of Ge deposition on a pre-pattemed Si surface. By partially overgrowing nanometer-sized electron beam-induced carbon deposits, faceted pits form at the Si surface and well-defined arrays of self-assembled Ge dots can be grown site selectively in and around those. Typically, four closely spaced Ge islands are formed by preferential nucleation around the pits. By varying the pattern of C-deposits a manifold of different arrays can be obtained. [Copyright &y& Elsevier]

In this paper, we present InAs quantum dots prepared on an InxAlyGa1−x−yAs surface by metal organic vapor phase epitaxy. Atomic force microscopy measurements indicate that dots grown on material with higher Al content are smaller, and that the local dot densities on step-bunched facets formed on the vicinal (0 0 1) surfaces increase. We find that these dots show luminescence at very long wavelengths, λroom temperature≈2.1 μm, and that the emission wavelengths are blue-shifted when the Al content is increased in the layer onto which dot material is deposited. [Copyright &y& Elsevier]

In this paper, we present the effect of annealing temperature and annealing time on InAs site-controlled quantum dot growth. Individual InAs quantum dots formed by self-assembling have been positioned into holes, created by partial overgrowth of electron beam induced nano-carbon deposits by metal organic vapor phase epitaxy. As/P exchange reactions produce material sufficient for selective dot nucleation in the holes. Results, showing that As/P exchange reactions occur even when capping the dots with InP are presented. [Copyright &y& Elsevier]