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Start Over Author "Sato, Rai" Topic 8k4k
2 results on '"Sato, Rai"'

1. 13.3-inch 8k4k 664-ppi foldable OLED display using crystalline oxide semiconductor FETs.

Author

Takahashi, Kei, Sato, Takehisa, Yamamoto, Roh, Shishido, Hideaki, Isa, Toshiyuki, Eguchi, Shingo, Miyake, Hiroyuki, Hirakata, Yoshiharu, Yamazaki, Shunpei, Sato, Rai, Matsumoto, Hironori, and Yazaki, Naomi

Subjects
FIELD-effect transistors, ORGANIC light emitting diodes, LIQUID crystal displays, METAL oxide semiconductors, INDIUM gallium zinc oxide
Abstract

A prototype 13.3-inch 8k4k 664-ppi high-resolution foldable organic light emitting diode display is constructed. C-axis aligned a-b-plane-anchored crystal In-Ga-Zn oxide field effect transistors designed using a 1.5-μm rule process are used in the backplane. Each pixel circuit has three transistors and one capacitor, and an external circuit is used to correct pixel current. [ABSTRACT FROM AUTHOR]

Published
2015
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2. 18.4: 13.3-inch 8k4k 664-ppi Foldable OLED Display Using Crystalline Oxide Semiconductor FETs.

Author

Takahashi, Kei, Sato, Takehisa, Yamamoto, Roh, Shishido, Hideaki, Isa, Toshiyuki, Eguchi, Shingo, Miyake, Hiroyuki, Hirakata, Yoshiharu, Yamazaki, Shunpei, Sato, Rai, Matsumoto, Hironori, and Yazaki, Naomi

Subjects
ORGANIC light emitting diodes, INDIUM gallium zinc oxide, PIXELS, SEMICONDUCTORS, FIELD-effect transistors, DISPLAY systems, CRYSTALLINE polymers
Abstract

A prototype 13.3-inch 8k4k 664-ppi high-resolution foldable OLED display is constructed. C-axis aligned crystalline In-Ga-Zn oxide (CAAC-IGZO) FETs designed using a 1.5-µm rule process are used in the backplane. Each pixel circuit has three transistors and one capacitor, and an external circuit is used to correct pixel current. [ABSTRACT FROM AUTHOR]

Published
2015
Full Text
View/download PDF

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