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This article explores the surface architecture formation on layered A3B6 semiconductors, such as In4Se3, InSe, and InTe, focusing on kinetics of surface roughness parameters, such as RMS, skewness and kurtosis, and power spectral density (PSD) under indium deposition studied through large-scale 1 × 1 µm2 and 150 × 150 nm2 scanning tunneling microscopy (STM) images analysis. Our findings reveal common kinetics of surface parameters across different crystals, suggesting fundamental similarities in their interface kinetics. Particularly, PSD analysis elucidates the role of low-frequency spatial structures, underscoring their significance in surface roughness kinetics to some extent independent of the specific layered crystal surface structure. [ABSTRACT FROM AUTHOR]

The studies of In nanosystem formation on (100) surface of In4Se3 were conducted applying analysis of STM data from 1 × 1µm2 areas considering the distribution of image pixels' height depending on the In deposition degree and kinetics of root mean square, skewness, kurtosis parameters. We have shown the possibility of highly-oriented 1D indium nanostructures' growth with the Volmer-Weber growth mode on In4Se3 (100) surface applied as template. The optimal conditions to obtain the most oriented nano wire like nanostructures is thermal-induced Volmer–Weber growth in successive cycles of indium deposition – heating with activation of the solid state dewetting process. [ABSTRACT FROM AUTHOR]

Sb2Te3 layered chalcogenide crystal's (0001) surface was applied for self-organizing of deposited indium nanostructures' arrays while solid state dewetting procedure. Sb2Te3 samples were characterized by XRD, XPS, LEED and STM/STS. STM shows that shape and spatial arrangement of indium induced 0 D nanostructures are consistent with the surface lattice symmetry. The fractal analysis of STM images of the (0001) Sb2Te3 and (0001) InSe surfaces, which are similar in symmetry, shows that distribution in size of indium nanostructures are almost the same under commensurate experimental conditions. The STS reveals correlation between indium coverage and quantity of DOS within energy gap of Sb2Te3. [ABSTRACT FROM AUTHOR]

Formation of indium deposited coverage on (001) surface of InTe layered semiconductor crystal due to solid state dewetting process was studied by STM/STS in UHV. The initial surface was characterized by XPS, LEED and AFM. InTe has tetragonal crystal structure of the TlSe type (I4/mcm space group, lattice parameters a = 8.4414(6) Å, c = 7.1333(5) Å) determined by XRD. STM/STS show that the shape and arrangement 0 D indium induced nanostructures are powered by square surface lattice symmetry. The STS reveal correlation between indium coverage kinetics and increase in the quantity of DOS within the band gap of InTe. [ABSTRACT FROM AUTHOR]