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Liquid metal‐based printing techniques are emerging as an exemplary platform for harvesting non‐layered 2D materials with a thickness down to a few nanometres, leading to an ultra‐large surface‐area‐to‐volume ratio that is ideal for sensing applications. In this work, the synthesis of 2D tin dioxide (SnO2) by exfoliating the surface oxide of molten tin is reported which highlights the enhanced sensing capability of the obtained materials to ammonia (NH3) gas is reported. It is demonstrated that amperometric gas sensors based on liquid metal‐derived 2D SnO2 nanosheets can achieve excellent NH3 sensing performance at low temperature (150 °C) with and without UV light assistance. Detection over a wide range of NH3 concentrations (5–500 ppm) is observed, revealing a limit of detection at the parts per billion (ppb) level. The 2D SnO2 nanosheets also feature excellent cross‐interference performance toward different organic and inorganic gas species, showcasing a high selectivity. Further, ab initio DFT calculations reveal the NH3 adsorption mechanism is dominated by chemisorption with a charge transfer into 2D SnO2 nanosheets. In addition, a proof of concept for prototype flexible ammonia sensors is demonstrated by depositing 2D SnO2 on a polyimide substrate, signifying the high potential of employing liquid metal printed SnO2 for realizing wearable gas sensors. [ABSTRACT FROM AUTHOR]

The synthesis of nanometer‐thick (≈3 nm) gallium oxynitride (GaOxNy) layers with a variable stoichiometry is reported. The approach primarily exploits the liquid metal chemistry (LMC) technique and promises easier integration of 2D materials onto photonic devices compared to traditional top‐down and bottom‐up methods. The fabrication follows a two‐step process, involving first liquid metal‐based printing of a nanometer‐thick layer of gallium oxide (Ga2O3), followed a plasma‐enhanced nitridation reaction. Control over nitridation parameters (plasma power, exposure time) allows adjustment of the GaOxNy layer's composition, granting access to compounds with distinct optical properties (e.g., a 20% index variation), as demonstrated by ellipsometry and density functional theory (DFT) simulations. DFT provides a microscopic understanding of the effect of the bond polarization and crystallinity on the optical properties of GaOxNy compounds. These findings expand the knowledge of ultrathin GaOxNy alloys, which are poorly studied with respect to their gallium nitride (GaN) and Ga2O3 counterparts. They also represent an essential step toward integrating such 2D materials into photonic chips and offer new opportunities to improve the performance of hybrid optoelectronic devices. [ABSTRACT FROM AUTHOR]

Miniaturization and energy consumption by computational systems remain major challenges to address. Optoelectronics based synaptic and light sensing provide an exciting platform for neuromorphic processing and vision applications offering several advantages. It is highly desirable to achieve single‐element image sensors that allow reception of information and execution of in‐memory computing processes while maintaining memory for much longer durations without the need for frequent electrical or optical rehearsals. In this work, ultra‐thin (<3 nm) doped indium oxide (In2O3) layers are engineered to demonstrate a monolithic two‐terminal ultraviolet (UV) sensing and processing system with long optical state retention operating at 50 mV. This endows features of several conductance states within the persistent photocurrent window that are harnessed to show learning capabilities and significantly reduce the number of rehearsals. The atomically thin sheets are implemented as a focal plane array (FPA) for UV spectrum based proof‐of‐concept vision system capable of pattern recognition and memorization required for imaging and detection applications. This integrated light sensing and memory system is deployed to illustrate capabilities for real‐time, in‐sensor memorization, and recognition tasks. This study provides an important template to engineer miniaturized and low operating voltage neuromorphic platforms across the light spectrum based on application demand. [ABSTRACT FROM AUTHOR]

Gallium nitride (GaN) technology has matured and commercialised for optoelectronic devices in the ultraviolet (UV) spectrum over the last few decades. Simultaneously, atomically thin materials with unique features have emerged as contenders for device miniaturization. However, the lack of successful techniques to produce ultra‐thin GaN prevents access to these new predicted properties. Here, this important gap is addressed by printing millimeter‐large ultra‐thin GaN nanosheets (NS) (≈1.4 nm) using a simple two‐step process that simultaneously introduces nitrogen point defects. This extends the photoelectrical spectral response from UV (280 nm) to near infrared (NIR) (1080 nm). The GaN‐based photodetectors display excellent figures of merit, having a responsivity (2.72 × 104 A W−1) up to four orders of magnitude higher than the commercial photodetectors at room temperature, despite being 102–103 times thinner. The photodetectors exhibit fast switching, with rise and decay time in the range of microseconds. The state‐of‐the‐art device performance originates from the ultra‐thin nature of GaN NS coupled with nitrogen point vacancies in the synthesis process. This work presents the opportunity to significantly expand the reach of GaN semiconductor technology and may lead to applications in high‐performance miniaturized imaging systems, spectroscopy, communication, and integrated optoelectronic circuits. [ABSTRACT FROM AUTHOR]

Wide bandgap semiconducting oxides are emerging as potential 2D materials for transparent electronics and optoelectronics. This fuels the quest for discovering new 2D metal oxides with ultrahigh transparency and high mobility. While the former can be achieved by reducing the thickness of oxide films to only a few nanometers, the latter is more commonly realized by intentional doping. This article reports a one‐step synthesis of few‐unit‐cell‐thick and laterally large antimony‐doped indium oxide (IAO). The doping process occurs spontaneously when the oxide is grown on the surface of a molten Sb–In alloy and 2D IAO nanosheets can be easily printed onto desired substrates. With thicknesses at the atomic scale, these materials exhibit excellent transparency exceeding 98% across the visible and near‐infrared range. Field‐effect transistors based on low‐doped IAO nanosheets reveal a high electron mobility of ≈40 cm2 V−1 s−1. Additionally, a notable photoresponse is observed in 2D IAO‐based photodetectors under ultraviolet (UV) radiation. Photoresponsivities of low‐doped and highly doped IAO at a wavelength of 285 nm are found to be 1.2 × 103 and 0.7 × 103 A W−1, respectively, identifying these materials as promising candidates for the fabrication of high‐performance optoelectronics in the UV region. [ABSTRACT FROM AUTHOR]

2D materials with high in‐plane anisotropy are rapidly emerging as a tantalizing class of nanomaterials with promising applications in nanoelectronics and optoelectronics since they provide an additional degree of freedom that can be exploited in device design. The large‐area synthesis of such materials remains however challenging since the anisotropic crystal structure renders identifying a suitable growth substrate to be difficult, while the nanosheets are usually too fragile for the exfoliation and transfer of macroscopic sheets. This work reports the scalable synthesis of highly crystalline, large‐area 2D Bi2S3 nanosheets using a novel liquid‐metal‐based synthesis approach. Ultrathin bismuth oxide sheets are exfoliated from molten bismuth followed by tube furnace sulfurization. The strategy effectively separates the formation of layered structures from the process of anisotropic crystallization, overcoming the shortcomings of established techniques. The synthesized nanosheets feature a highly anisotropic orthorhombic crystal structure with intraplane van der Waals gaps and a direct bandgap of ≈2.3 eV. The nanosheets are found to be highly photoconductive with a photoresponsivity of 8 A W−1. Bi2S3 channel‐based field effect transistors feature a maximum hole mobility of 28 cm2 V−1 s−1, highlighting the excellent electronic properties of the isolated nanosheets. [ABSTRACT FROM AUTHOR]

Ga–Sn–Zn eutectic alloy is a non-toxic liquid metal alloy which could be used in a multitude of applications, including as a heat transfer agent, in gas sensing, and in medicine. Alloys containing gallium readily oxidise in air, forming a thin oxide layer that influences the properties of liquid metals and which has not been studied. In this study, the oxide layer formed on Ga–Sn–Zn alloy was transferred at room temperature onto three substrates—quartz, glass and silicon. The contact angle between the liquid alloy and different substrates was determined. The obtained thin oxide films were characterised using atomic force microscopy, X-ray photon spectroscopy, and optical and transmission electron microscopy. The contact angle does not influence the deposition of the layers. It was determined that it is possible to obtain nanometric oxide layers of a few micrometres in size. The chemical composition was determined by XPS and EDS independently, and showed that the oxide layer contains about 90 atom % of gallium with some additions of tin and zinc. The oxides obtained from the eutectic Ga–Sn–Zn liquid alloys appear to be nanocrystalline. [ABSTRACT FROM AUTHOR]