1. Correlation between Electrical Transport and Nanoscale Strain in InAs/In0.6Ga0.4As Core–Shell Nanowires
- Author
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Andrew M. Minor, Thomas Kanne Nordqvist, Eva Olsson, Lunjie Zeng, Christoph Gammer, Wolfgang Jäger, Peter Krogstrup, Jesper Nygård, and Burak Ozdol
- Subjects
Materials science ,Nanostructure ,Letter ,strain mapping ,Band gap ,Nanowire ,Bioengineering ,02 engineering and technology ,Conductivity ,010402 general chemistry ,01 natural sciences ,piezoresistance ,Strain engineering ,transmission electron microscopy ,General Materials Science ,business.industry ,Mechanical Engineering ,General Chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Piezoresistive effect ,InAs nanowire ,0104 chemical sciences ,Semiconductor ,Optoelectronics ,Charge carrier ,0210 nano-technology ,business - Abstract
Free-standing semiconductor nanowires constitute an ideal material system for the direct manipulation of electrical and optical properties by strain engineering. In this study, we present a direct quantitative correlation between electrical conductivity and nanoscale lattice strain of individual InAs nanowires passivated with a thin epitaxial In0.6Ga0.4As shell. With an in situ electron microscopy electromechanical testing technique, we show that the piezoresistive response of the nanowires is greatly enhanced compared to bulk InAs, and that uniaxial elastic strain leads to increased conductivity, which can be explained by a strain-induced reduction in the band gap. In addition, we observe inhomogeneity in strain distribution, which could have a reverse effect on the conductivity by increasing the scattering of charge carriers. These results provide a direct correlation of nanoscale mechanical strain and electrical transport properties in free-standing nanostructures.
- Published
- 2018
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