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Current-induced spin-transfer torques (STT) and spin-orbit torques (SOT) enable the electrical switching of magnetic tunnel junctions (MTJs) in non-volatile magnetic random access memories. To develop faster memory devices, an improvement in the timescales that underlie the current-driven magnetization dynamics is required. Here we report all-electrical time-resolved measurements of magnetization reversal driven by SOT in a three-terminal MTJ device. Single-shot measurements of the MTJ resistance during current injection reveal that SOT switching involves a stochastic two-step process that consists of a domain nucleation time and propagation time, which have different genesis, timescales and statistical distributions compared to STT switching. We further show that the combination of SOT, STT and the voltage control of magnetic anisotropy leads to reproducible subnanosecond switching with the spread of the cumulative switching time smaller than 0.2 ns. Our measurements unravel the combined impact of SOT, STT and the voltage control of magnetic anisotropy in determining the switching speed and efficiency of MTJ devices.

International audience; We use three-terminal magnetic tunnel junctions (MTJs) designed for field-free switching by spin-orbit torques (SOTs) to systematically study the impact of dual voltage pulses on the switching performance. We show that the concurrent action of an SOT pulse and an MTJ bias pulse allows for reducing the critical switching energy below the level typical of spin-transfer-torque while preserving the ability to switch the MTJ on the subnanosecond time scale. By performing dc and real-time electrical measurements, we discriminate and quantify three effects arising from the MTJ bias: the voltage-controlled change of theperpendicular magnetic anisotropy, current-induced heating, and the spin-transfer torque. The experimental results are supported by micromagnetic modeling. We observe that, depending on the pulse duration and the MTJ diameter, different effects take a lead in assisting the SOTs in the magnetization-reversal process. Finally, we present a compact model that allows for evaluating the impact of each effect due to the MTJ bias on the critical switching parameters. Our results provide input to optimize the switching of three-terminal devices as a function of time, size, and material parameters

International audience; High-mobility hexagonal boron nitride (hBN)/graphene/ hBN heterostructures are able to reach intrinsic limits of transport. Here, we investigate optoelectronic mixing, which is a demanding function combining efficient photodetection and fast carrier dynamics. Using such a heterostructure embedded in a coplanar waveguide, we obtain a record conversion efficiency of about −40 dB for frequencies up to 65 GHz. This performance is obtained at high doping in the photobolometric regime. We provide a microscopic model of the photodetection, which accurately describes the experimental observations, allows the assessment of the intrinsic limits of our device, and paves the way for device optimization by revealing the different mechanisms at play.

We report time-resolved measurements of magnetization switching by spin–orbit torques in the absence of an external magnetic field in perpendicularly magnetized magnetic tunnel junctions (MTJs). Field-free switching is enabled by the dipolar field of an in-plane magnetized layer integrated above the MTJ stack, the orientation of which determines the switching polarity. Real-time single-shot measurements provide direct evidence of magnetization reversal and switching distributions. Close to the critical switching voltage, we observe stochastic reversal events due to a finite incubation delay preceding the magnetization reversal. Upon increasing the pulse amplitude to twice the critical voltage, the reversal becomes quasi-deterministic, leading to reliable bipolar switching at sub-ns timescales in zero external field. We further investigate the switching probability as a function of dc bias of the MTJ and external magnetic field, providing insight into the parameters that determine the critical switching voltage. ISSN:0003-6951 ISSN:1077-3118

We demonstrate for the first time full-scale integration of top-pinned perpendicular MTJ on 300 mm wafer using CMOS-compatible processes for spin-orbit torque (SOT)-MRAM architectures. We show that 62 nm devices with a W-based SOT underlayer have very large endurance (> 5x10^10), sub-ns switching time of 210 ps, and operate with power as low as 300 pJ., presented at VLSI2018 session C8-2

Current-induced spin-orbit torques are one of the most effective ways to manipulate the magnetization in spintronic devices, and hold promise for fast switching applications in non-volatile memory and logic units. Here, we report the direct observation of spin-orbit-torque-driven magnetization dynamics in Pt/Co/AlO

The rich physics of spin transfer nano-oscillators (STNO) has provoked a huge interest to create a new generation of multi-functional microwave spintronic devices [1]. It has been often emphasized that their nonlinear behavior gives a unique opportunity to tune their radiofrequency (rf) properties but at the cost of large phase noise, not compatible with practical applications. To tackle this issue as well as to open the opportunities to new developments for non-boolean computations [1], one strategy is to use electrical synchronization of STOs through the rf current. Thereby, it is crucial to understand how the synchronization forces transmitted through the electric current. In this talk, we will first present the results of an experimental study showing the self-synchronization of STNO by re-injecting its rf current after a certain delay time [2]. In the second part, we demonstrate that the synchronization of two vortex-STNOs connected in parallel can be tuned either by an artificial delay or by the spin transfer torques [3]. The synchronization of spin-torque oscillators, combined with the drastic improvement of the rf-features (linewidth decreases by a factor of 2 and power increases by a factor of 4) in the synchronized state, marks an important milestone towards a new generation of rf-devices based on STNO. The authors acknowledge the financial support from ANR agency (SPINNOVA: ANR-11-NANO-0016) and EU grant (MOSAIC: ICT-FP7-317950). [1] N. Locatelli, V. Cros, and J. Grollier, Nat Mater 13, 11 (2014). [2] S. Tsunegi et al., arXiv:1509.05583 (2015) [3] R. Lebrun et al., arXiv:1601.01247 (2016)

The self-synchronization of spin torque oscillators is investigated experimentally by re-injecting its radiofrequency (rf) current after a certain delay time. We demonstrate that the integrated power and spectral linewidth are improved for optimal delays. Moreover by varying the phase difference between the emitted power and the re-injected one, we find a clear oscillatory dependence on the phase difference with a 2π periodicity of the frequency of the oscillator as well as its power and linewidth. Such periodical behavior within the self-injection regime is well described by the general model of nonlinear auto-oscillators including not only a delayed rf current but also all spin torque forces responsible for the self-synchronization. Our results reveal new approaches for controlling the non-autonomous dynamics of spin torque oscillators, a key issue for rf spintronics applications as well as for the development of neuro-inspired spin-torque oscillators based devices.

It has been proposed that high-frequency detectors based on the so-called spin-torque diode effect in spin transfer oscillators could eventually replace conventional Schottky diodes due to their nanoscale size, frequency tunability and large output sensitivity. Although a promising candidate for information and communications technology applications, the output voltage generated from this effect has still to be improved and, more pertinently, reduces drastically with decreasing radiofrequency (RF) current. Here we present a scheme for a new type of spintronics-based high-frequency detector based on the expulsion of the vortex core in a magnetic tunnel junction (MTJ). The resonant expulsion of the core leads to a large and sharp change in resistance associated with the difference in magnetoresistance between the vortex ground state and the final C-state configuration. Interestingly, this reversible effect is independent of the incoming RF current amplitude, offering a fast real-time RF threshold detector.

We investigate experimentally the synchronization of vortex based spin transfer nano-oscillators to an external rf current whose frequency is at multiple integers, as well as at an integer fraction, of the oscillator frequency. Through a theoretical study of the locking mechanism, we highlight the crucial role of both the symmetries of the spin torques and the nonlinear properties of the oscillator in understanding the phase locking mechanism. In the locking regime, we report a phase noise reduction down to $\ensuremath{-}90\text{ }\text{ }\mathrm{dBc}/\mathrm{Hz}$ at 1 kHz offset frequency. Our demonstration that the phase noise of these nanoscale nonlinear oscillators can be tuned and eventually lessened, represents a key achievement for targeted radio frequency applications using spin torque devices.

We experimentally demonstrate that large amplitude magnetic vortex gyrations can be parametrically excited by the injection of radio-frequency (rf) current at twice the natural frequency of the gyrotropic vortex-core motion. The mechanism of excitation is based on the parallel pumping of vortex motion by the rf orthoradial field generated by the injected current. Theoretical analysis shows that experimental results can be interpreted as the manifestation of parametric amplification when the rf current is small, and of parametric instability when the rf current is above a certain threshold. By taking into account the energy nonlinearities, we succeed to describe the amplitude saturation of vortex oscillations as well as the coexistence of stable regimes.