1. Low-Loss Integrated Nanophotonic Circuits with Layered Semiconductor Materials
- Author
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Ioannis Paradisanos, Clément Javerzac-Galy, Junqiu Liu, Tianyi Liu, Giancarlo Soavi, Arslan S. Raja, Mikhail Churaev, Rui Ning Wang, Domenico De Fazio, Alisson R. Cadore, Jijun He, Philippe Roelli, Barbara L T Rosa, Andrea C. Ferrari, Sefaattin Tongay, Tobias J. Kippenberg, Paradisanos, Ioannis [0000-0001-8310-710X], Liu, Junqiu [0000-0003-2405-6028], Javerzac-Galy, Clément [0000-0002-6816-1391], Tongay, Sefaattin [0000-0001-8294-984X], Soavi, Giancarlo [0000-0003-2434-2251], Ferrari, Andrea C [0000-0003-0907-9993], and Apollo - University of Cambridge Repository
- Subjects
spectroscopy ,Materials science ,Wafer bonding ,optoelectronics ,Nanophotonics ,photonics ,FOS: Physical sciences ,MoTe2 ,Bioengineering ,Applied Physics (physics.app-ph) ,02 engineering and technology ,photonic integrated circuits ,7. Clean energy ,chemistry.chemical_compound ,generation ,Monolayer ,General Materials Science ,Diode ,business.industry ,Mechanical Engineering ,Settore FIS/01 - Fisica Sperimentale ,Photonic integrated circuit ,light-emitting-diodes ,graphene ,MoTe ,Physics - Applied Physics ,General Chemistry ,band-gap ,layered materials ,microresonators ,2 ,silicon nitride ,transition-metal dichalcogenides ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Semiconductor ,Silicon nitride ,chemistry ,Optoelectronics ,photodetectors ,Photonics ,0210 nano-technology ,business ,silicon-nitride ,Optics (physics.optics) ,Physics - Optics - Abstract
Monolayer transition metal dichalcogenides with direct bandgaps are emerging candidates for microelectronics, nano-photonics, and optoelectronics. Transferred onto photonic integrated circuits (PICs), these semiconductor materials have enabled new classes of light-emitting diodes, modulators and photodetectors, that could be amenable to wafer-scale manufacturing. For integrated photonic devices, the optical losses of the PICs are critical. In contrast to silicon, silicon nitride (Si3N4) has emerged as a low-loss integrated platform with a wide transparency window from ultraviolet to mid-infrared and absence of two-photon absorption at telecommunication bands. Moreover, it is suitable for nonlinear integrated photonics due to its high Kerr nonlinearity and high-power handing capability. These features of Si3N4 are intrinsically beneficial for nanophotonics and optoelectronics applications. Here we report a low-loss integrated platform incorporating monolayer molybdenum ditelluride (1L-MoTe2) with Si3N4 photonic microresonators. We show that, with the 1L-MoTe2, microresonator quality factors exceeding 3 million in the telecommunication O-band to E-band are maintained. We further investigate the change of microresonator dispersion and resonance shift due to the presence of 1L-MoTe2, and extrapolate the optical loss introduced by 1L-MoTe2 in the telecommunication bands, out of the excitonic transition region. Our work presents a key step for low-loss, hybrid PICs with layered semiconductors without using heterogeneous wafer bonding.
- Published
- 2021