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The diffusion welding (DW), known as direct bonding technique could be more used as an alternative approach to develop silicon carbide (SiC) Schottky rectifiers to existing mainstream metallization contact technologies. Measured results for p-type 4H-SiC Schottky barrier diodes (SBD) arepresented. And comprehensive numerical study to characterize the device has been performed. The simulations are carried out with ATLAS software (Silvaco). The measured and numerically simulated forward current-voltage (I–V) and capacitance-voltage (C–V) characteristics in a large temperaturerange are analyzed. Some of the measured p-type 4H-SiC Schottky diodes show deviation in specific ranges of their electrical characteristics. This deviation, especially due to excess current, dominates at low voltages (less than 1 V) and temperatures (less than room temperature). To verify the existence of electrically active defects under the Schottky contact, which influences the Schottky barrier height (SBH) and its inhomogeneity, the deep level transient spectroscopy (DLTS) technology was applied. DLTS measurements show the presence of a deep-level defect with activation energy corresponding typically for multilevel trap clusters.

High-throughput microflow cytometry has become a focal point of research in recent years. In particular, droplet microflow cytometry (DMFC) enables the analysis of cells reacting to different stimuli in chemical isolation due to each droplet acting as an isolated microreactor. Furthermore, at high flow rates, the droplets allow massive parallelization, further increasing the throughput of droplets. However, this novel methodology poses unique challenges related to commonly used fluorometry and fluorescent microscopy techniques. We review the optical sensor technology and light sources applicable to DMFC, as well as analyze the challenges and advantages of each option, primarily focusing on electronics. An analysis of low-cost and/or sufficiently compact systems that can be incorporated into portable devices is also presented.

Silicon carbide (SiC) is a wide-bandgap (WBG) semiconductor material with high thermal conductivity and radiation harness that have good potential to develop a new generation of power devices for operating at the higher temperature, high frequency, high power applications. In this paper, various manufacturing process (MP) parameters of diffusion welding (DW) p-type 4H-SiC Schottky contact developments are studied. Deposition temperature and pressure influence the DW Schottky barrier diodes (SBD) electrical characteristics and observed their barrier inhomogeneity. The lower doping concentration in the epilayer improves the Schottky contact characteristics with the same MP parameters. Additionally, Schottky contact with DW deposition technology shows better electrical contact compare to ion-sputtering deposition technique. Furthermore, temperature dependency of forward current-voltage (I–V), capacitance-voltage (C–V), and barrier height correspond to ideality factors measurements of DW two-MP parameters shows that there are higher barrier inhomogeneities at the metal and SiC interface compare to one-MP parameters for Aluminum (Al)-foil/p 4H–SiC SBDs.

The diffusion welding (DW) is a comprehensive mechanism that can be extensively used to develop silicon carbide (SiC) Schottky rectifiers as a cheaper alternative to existing mainstream contact forming technologies. In this work, the Schottky barrier diode (SBD) fabricated by depositing Al-Foil on the p-type 4H-SiC substrate with a novel technology, DW. The electrical properties of physically fabricated Al-Foil/4H-SiC SBD have been investigated. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics based on the thermionic emission model in the temperature range (300 K&ndash, 450 K) are investigated. It has been found that the ideality factor and barrier heights of identically manufactured Al-Foil/p-type-4H-SiC SBDs showing distinct deviation in their electrical characteristics. An improvement in the ideality factor of Al-Foil/p-type-4H-SiC SBD has been noticed with an increase in temperature. An increase in barrier height in fabricated SBD is also observed with an increase in temperature. We also found that these increases in barrier height, improve ideality factors and abnormalities in their electrical characteristics are due to structural defects initiation, discrete energy level formation, interfacial native oxide layer formation, inhomogenous doping profile distribution and tunneling current formation at the SiC sufaces.

In the last decade, silicon carbide (SiC) has gained a remarkable position among wide bandgap semiconductors due to its high temperature, high frequency, and high power electronics applications. SiC heterostructures, based on the most prominent polytypes like 3C-SiC, 4H-SiC and 6H-SiC, exhibit distinctive electrical and physical properties that make them promising candidates for high performance optoelectronic applications. The results of simulations of nn-junction 3C-4H/SiC and 6H-4H/SiC heterostructures, at the nanoscale and microscale, are presented in this paper. Nanoscale devices are simulated with QuantumWise Atomistix Toolkit (ATK) software, and microscale devices are simulated with Silvaco TCAD software. Current-voltage (IV) characteristics of nanoscale and microscale simulated devices are compared and discussed. The effects of non-ideal bonding at the heterojunction interface due to lattice misplacements (axial displacement of bonded wafers) are studied using the ATK simulator. These simulations lay the groundwork for the experiments, which are targeted to produce either a photovoltaic device or a light-emitting diode (working in the ultraviolet or terahertz spectra), by direct bonding of SiC polytypes.

During the last few years graphene has emerged as a potential candidate for electronics and optoelectronics applications due to its several salient features. Graphene is a smart material that responds to any physical change in its surrounding environment. Graphene has a very low intrinsic electronic noise and it can detect even a single gas molecule in its proximity. This property of graphene makes is a suitable and promising candidate to detect a large variety of organic/inorganic chemicals and gases. Typical solid state gas sensors usually requires high operating temperature and they cannot detect very low concentrations of gases efficiently due to intrinsic noise caused by thermal motion of charge carriers at high temperatures. They also have low resolution and stability issues of their constituent materials (such as electrolytes, electrodes, and sensing material itself) in harsh environments. It accelerates the need of development of robust, highly sensitive and efficient gas sensor with low operating temperature. Graphene and its derivatives could be a prospective replacement of these solid-state sensors due to their better electronic attributes for moderate temperature applications. The presence of extremely low intrinsic noise in graphene makes it highly suitable to detect a very low concentration of organic/inorganic compounds (even a single molecule ca be detected with graphene). In this article, we simulated a novel graphene nanoribbon based field effect transistor (FET) and used it to detect propane and butane gases. These are flammable household/industrial gases that must be detected to avoid serious accidents. The effects of atmospheric oxygen and humidity have also been studied by mixing oxygen and water molecules with desired target gases (propane and butane). The change in source-to-drain current of FET in the proximity of the target gases has been used as a detection signal. Our simulated FET device showed a noticeable change in density of states and IV-characteristics in the presence of target gas molecules. Nanoscale simulations of FET based gas sensor have been done in Quantumwise Atomistix Toolkit (ATK). ATK is a commercially available nanoscale semiconductor device simulator that is used to model a large variety of nanoscale devices. Our proposed device can be converted into a physical device to get a low cost and small sized integrated gas sensor.

Carbon nanotubes (CNTs)-based sensors have gained significant importance due to their tremendous electrical and physical attributes. CNT-based gas sensors have high sensitivity, stability, and fast response time compared to that of solid-state sensors. On exposure to a large variety of organic and inorganic compounds, the conductivity of CNT changes. This change in electrical conductivity is being used as a detection signal to detect different target molecules. Hydrogen-sulfide and benzene are hazardous gases that can cause serious health issues in humans. Therefore, it is mandatory to detect their presence in industrial and household environments. In this article, we simulated CNT-based benzene and hydrogen-sulfide sensor with a nanoscale semiconductor device simulator&mdash, Quantumwise Atomistix Toolkit (ATK). The change in the device density of states, electric current, and photocurrent in the presence of target molecules have been calculated. The change in photocurrent in the presence of target molecules has been proposed as a novel detection mechanism to improve the sensor selectivity and accuracy. This change in photocurrent as well as electric current in the presence of target molecules can be used simultaneously as detection signals. Our intension in the future is to physically fabricate this simulated device and use photocurrent as well as electric current as detection mechanisms.

Nowadays graphene and its derivatives have gained the interest of researchers due to their exceptional optical, electrical and chemical attributes. They have emerged as potential candidates for electronics and optoelectronics sensor applications. Graphene is highly sensitive to any physical change in its surrounding environment that makes it a suitable candidate for sensing a large variety of organic and inorganic molecules. Volatile and flammable organic compounds like acetone and methane can lead to fatal accidents in domestic and industrial environments. In this article, nanoscale simulations of graphene nano-sheet based methane and acetone detector have been done. Intrinsic 4H-SiC has been used as a substrate for graphene nano-sheet. These simulations have been carried out in QuantumWise Atomistix Toolkit (ATK) software that is an atomic scale semiconductor device simulator. A noticeable change in the density of states (DOS) and electrical conductivity through the device has been observed in the presence of target molecules. This change in electrical conductivity through this nano-scale device can be used as a detection signal for methane and acetone molecules to develop a physical sensor.

Over the last decade graphene based electronic devices have attracted the interest of researchers due to their exceptional chemical, electrical and optical properties. Graphene is very sensitive to any physical changes in its surrounding environment and, inherently, has very low electronic noise. This property of graphene makes it a suitable candidate for sensor applications. The purpose of the work presented in this article is to demonstrate the ability of graphene derivatives to detect toxic organic compounds like phenol and methanol. A novel method for the detection of organic compounds (phenol and methanol) has been introduced in this article. In this method, a change in the photocurrent, as well as electric current, have been used as detection signals to improve the sensor accuracy and selectivity for specific target molecules. A nanoscale electronic device simulator, Quantumwise Atomistix Toolkit (ATK), has been used to simulate graphene nanosheet and armchair graphene nanoribbon based sensors. Devices density of states (DOS), current&ndash, voltage curves and photocurrent curves have been calculated with the ATK simulator. In the proximity of target molecules, a significant change in DOS, electric current and photocurrent have been observed. The simulated graphene based structures can be converted into physical sensors to obtain a low cost, small sized, integrated sensing device.

Impedance spectroscopy is a common approach in assessing passive electrical properties of biological matter. However, several problems appear in microfluidic devices in connection with the requirement for high sensitivity of signal acquisition from small volume sensors. The developed compact and inexpensive analyzer provides impedance spectroscopy measurement from three sensors, both connected in direct and differential modes. Measurement deficiencies are reduced with a novel design of sensors, measurement method, optimized electronics, signal processing, and mechanical design of the analyzer. Proposed solutions are targeted to the creation of reliable point-of-care (POC) diagnostic and monitoring appliances, including lab-on-a-chip type devices in the next steps of development. The test results show the good working ability of the developed analyzer, however, also limitations and problems that require attention and further improvement are appointed.

In the last decades, silicon carbide (SiC) based heterostructures have gained a remarkable place in research field due to their exceptional properties. These properties make SiC highly suitable for high temperature, high frequency, and high power electronics applications. The most prominent polytypes (among 200 types) of SiC like 3C-SiC, 4H-SiC and 6H-SiC, have distinctive electrical and physical attributes that make them promising candidates for high performance optoelectronic applications. Silicon (Si) also has been accepted as a promising material for wide range of electronic, optical and optoelectronic applications. Heterostructures fabricated by the direct bonding of SiC polytype and Si may have interesting physical and electrical attributes. In this paper, micro and nano-scale simulations of the nn-heterostructures of Si/4H-SiC and Si/3C-SiC have been done with Silvaco TCAD and QuantumWise Atomistix Toolkit (ATK) softwares respectively. Voltage-current density characteristics of the nanoscale and microscale simulated devices are computed and discussed. In nanoscale devices, the effects of defects due to lattice misplacements (axial displacement of bonded wafers) are also studied. These simulations are the preparation for our future experiments, which are targeted to produce either a high electron mobility diode or a light emitting diode, by direct bonding (diffusion welding) of SiC polytypes.

Nucleic acid amplification tests (NAAT) are widely used for the detection of living organisms, recently applied in Lab-on-a-Chip (LoC) devices to make portable DNA analysis platforms. While portable LoC-NAAT can provide definitive test results on the spot, it requires specialized temperature control equipment. This work focuses on delivering a generalized low-cost, wireless smart thermostat for isothermal NAAT protocols in 2 cm &times, 3 cm LoC cartridges. We report on the design, prototyping, and evaluation results of our smart thermostat. The thermostat was evaluated by experimental and simulated thermal analysis using 3D printed LoC cartridges, in order to verify its applicability to various isothermal NAAT protocols. Furthermore, it was tested at the boundaries of its operating ambient temperature range as well as its battery life was evaluated. The prototype thermostat was proven functional in 20&ndash, 30 &deg, C ambient range, capable of maintaining the required reaction temperature of 12 isothermal NAAT protocols with 0.7 &deg, C steady-state error in the worst case.

In recent years, graphene has sparked the interest of researchers due to its promising electrical and physical attributes. These attributes make it highly suitable to develop electronic devices with ultra-high mobility of charge carriers. Meanwhile silicon carbide (SiC), a wide bandgap semiconductor material, is being used for high temperature optoelectronic applications. SiC has more than 250 different crystalline forms, these are called polytypes. Some of these polytypes (such as 4H-SiC, 6H-SiC and 3C-SiC) have exceptional physical and electrical properties. Electronic devices which have SiC and graphene as their constituent materials may combine the outstanding attributes of both materials. This article attempts to simulate electronic devices having SiC and graphene as their constituent materials. For this purpose, simulations of a novel nn-heterojunction 4H-6H/SiC diodes with the inclusion of an armchair nanoribbon layer have been carried out. All of the simulations have been run using QuantumWise Atomistix Toolkit (ATK) software, which is an atomic scale electronic device simulator. The density of the states, charge carrier densities and current-voltage curves of the simulated devices have been computed. The simulation results showed a significant improvement in the electrical conduction properties of nn-heterojunction 4H-6H/SiC diodes after the inclusion of the armchair graphene nanoribbons. These simulations provide the groundwork for our future experiments, which will be targeted on fabricating high mobility diodes and/or field effect transistors.

Radio frequency microelectromechanical systems (RF MEMS) switch technology may have the potential to replace semiconductor technology in future communication systems as well as communication satellites, wireless and mobile phones. RF MEMS switches are being developed for low insertion loss, high isolation loss and high linearity that are required over a broad frequency band application. In wireless mobile communication systems, microstrip transmission lines (t-line) have received attention for their attractive benefits such as low profile, light weight, and easy fabrication. The present work has thus been to explore the design and modelling of low loss RF MEMS switches implemented in a microstrip discontinuity t-line configuration. The electromagnetic modelling of an RF MEMS switch with a microstrip line is presented with a simple analytical model to determine the scattering parameters. This study shows that an RF MEMS switch with a microstrip t-line provided less than 0.01 dB–0.05 dB insertion loss for 50 GHz frequency. Moreover, there is an isolation loss of 50 dB over frequencies up to 50 GHz frequency. This low insertion and high isolation loss in the single beam RF MEMS switch with a microstrip discontinuity t-line contributes to configuring a low loss transmission line for RF communication. DOI: http://dx.doi.org/10.5755/j01.eie.24.5.21842

Wide-bandgap (WBG) power semiconductor devices have good potential to replace Silicon-based devices for operating at higher temperatures. Silicon carbide (SiC) currently represents an established WBG candidate for developing power Schottky barrier diodes (SBD) used in power electronics that are required for the next generation power devices. Very few information is available about P-type 4H-SiC substrate being used for realization of SBD. Pre-production Technological computer aided design (TCAD) simulation of SBD, where p-doped epitaxial layer on p-type 4H-SiC substrate corresponds to experimental structures (currently in manufacturing process) could generate defects under the contact. P-type SiC SBD with some defects types is also examined for evaluating the influence on the forward current and reverse voltage blocking. Forward and reverse bias static characteristics are obtained for p-type 4H-SiC SBD at temperatures in the range of 300K to 600K. The currents are shown to have a large on resistance and tunneling component depending on the defects. The SBD device simulation shows that there is significant impact on the reverse current and voltage despite of the very thin defective layer. The reverse breakdown voltages of the diodes were found to decrease from several hundred volts to -100 V indicating the presence of defects edge leakage currents. The structural properties and characteristics of the resulting defects in the schottky contact layer are discussed.

Over the last decade graphene and its derivatives have stimulated the interest of researchers due to their extraordinary electrical, optical and chemical properties. Graphene has emerged as a potential candidate for electronic sensors and optical sensors applications. The purpose of the work presented in this article is to contribute in this novel field by simulating graphene nano-sheet based sensor to detect phenol and methanol molecules. QuantumWise Atomistix Toolkit (ATK) software has been used to carry out the sensor simulations. A significant change in the density of states and conductivity of the graphene have been noticed in the proximity of the target molecules. This change in the conductivity of graphene nano-sheet has been used as a detection signal. These simulations lay the groundwork for our physical experiments, which are targeted to produce a cheap sensor.

Impedance spectroscopy is a common approach in assessing passive electrical properties of biological matter. However, several problems appear in microfluidic devices in connection with high sensitivity signal acquisition from small volume sensors. The developed compact analyzer provides fast impedance spectroscopy measurement from three sensors in direct and differential modes. Measurement deficiencies are minimized with optimized electronics, measurement method, signal processing and mechanical design of the analyzer. Proposed solutions are targeted to the creation of reliable point-of-care (POC) diagnostic and monitoring appliances including lab-on-a-chip type devices in next steps.

This work aims to understand the thermo-electromechanical behaviour of a silicon-based, chevron type thermal actuator (TA) in microelectromechanical systems (MEMS). The analysis presents simple analytical and numerical models of the chevron type thermal actuator (CTA). The analytical models are compared with the results of finite element models (FEM) to optimise the TA design parameters and validate thermo-electromechanical analysis. Moreover, analytical models for deflection allow for a much easier optimisation and more straightforward design process than with the finite element approach. Since the deflection of chevron thermal actuators depends on many variables, design guidelines are introduced to create an optimum, efficient chevron thermal actuator for the desired deflection under a specified external load. This study shows that the CT A-optimised beam length is 2000 $\mu \mathrm{m}$ and optimised inclination is 5°. Chevron type TA deflection will be 50% less for higher inclination angles greater than those between 5°-10°. The minimum voltage required for the displacement of 3.5 $\mu \mathrm{m}$ is 3.3 V and a power consumption of approximately 3 mW was obtained from this study. This optimised design and thermo-electromechanical analysis can be used to design and investigate the high switching response in a silicon-based chevron type TA.

Silicon substance (is also known as Quartz) is an abundant in nature and the electrical properties it exhibits, plays a vital role in developing its usage in the field of semiconductor. More than decades we can say that Silicon has shown desirable signs but at the later parts it has shown some research potential for development of alternative material as semiconductor devices. This need has come to light as we started scaling down in size of the Silicon material and up in speed. This semiconductor material started exhibiting several fundamental physical limits that include the minimum gate oxide thickness and the maximum saturation velocity of carriers which determines the operation frequency. Though the alternative semiconductors provide some answers (such as III-V’s for high speed devices) for a path to skirt these problems, there also may be some ways to extend the life of silicon itself. Two paths are used as for alternative semiconductors i.e alternative gate dielectrics and silicon-based heterostructures. The SiC material has some strength properties under different conditions and find out the defects available in the material.Silicon substance (is also known as Quartz) is an abundant in nature and the electrical properties it exhibits, plays a vital role in developing its usage in the field of semiconductor. More than decades we can say that Silicon has shown desirable signs but at the later parts it has shown some research potential for development of alternative material as semiconductor devices. This need has come to light as we started scaling down in size of the Silicon material and up in speed. This semiconductor material started exhibiting several fundamental physical limits that include the minimum gate oxide thickness and the maximum saturation velocity of carriers which determines the operation frequency. Though the alternative semiconductors provide some answers (such as III-V’s for high speed devices) for a path to skirt these problems, there also may be some ways to extend the life of silicon itself. Two paths are used as for alternative semiconductors i.e alternative gate dielectrics and silicon-based heterostruc...

During the last decade, silicon carbide (SiC) and its heterostructures with other semiconductors have gained a significant importance for wide range of electronics applications. These structures are highly suitable for high frequency and high power applications in extremely high temperature environments. SiC exists in more than 200 different polycrystalline forms, called polytypes. Among these 200 types, the most prominent polytypes with exceptional physical and electrical attributes are 3C-SiC, 4H-SiC and 6H-SiC. Heterostructures of these SiC polytypes with other conventional semiconductors (like Si, Ge) can give rise to interesting electronic characteristics. In this article, Germanium (Ge) has been used to make heterostructures with 3C-SiC and 4H-SiC using a novel technique called diffusion welding. Microscale and nanoscale simulations of nn-heterojunction of Ge/3C-SiC and Ge/4H-SiC have been done. Microscale devices have been simulated with a commercially available semiconductor device simulator tool called Silvaco TCAD. Whereas nanoscale devices have been simulated with QuantumWise Atomistix Toolkit (ATK) software package. Current-voltage (IV) curves of all simulated devices have been calculated and compared. In nanoscale device, the effects of defects on IV-characteristics due to non-ideal bonding (lattice misplacement) at heterojunction interface have been analyzed. Our simulation results reveal that the proposed heterostructure devices with diffusion welding of wafers are theoretically possible. These simulations are the preparations of our near future physical experiments targeted to fabricate SiC based heterostructure devices using diffusion bonding technique.

Deep level traps in the forbidden bandgap of semiconductor can be either a desired effect or technological harm that should be avoided. Understanding the essence of specific deep traps, their influence on electrical optical and mechanical characteristics of devices and circuits makes it possible to drive the manufacturing processes to maximize the desired effect. Deep level transient spectroscopy (DLTS) is one of the traditional methods for finding the trap levels in the semiconductor possible energy level bands. Majority carrier trap levels, concentrations and even location in the structure can be extracted from DLTS measurements. Finding parameter values for minority carriers is more complicated and needs extra efforts, combining DLTS with other measurements. Although DLTS, and its more advanced flavors like Laplace DLTS, can be utilized to measure trap parameters in semiconductors with high sensitivity, they do not determine the essence of the trap. Numerical simulations can be used to verify the influence of defect parameters on characteristics that are measured during DLTS. The simulation results and the DLTS measurement results carried out at the Thomas Johann Seebeck Department of Electronics are compared and

Radio frequency microelectromechanical system (RF MEMS) switch technology might have potential to replace the semiconductor technology in future communication systems as well as communication satellites, wireless and mobile phones. This study is to explore the possibilities of RF MEMS switch design and optimization with aluminium nitride (AlN) thin film as the piezoelectric actuation material. Achieving low actuation voltage and high contact force with optimal geometry using the principle of piezoelectric effect is the main motivation for this research. Analytical and numerical modelling of single beam type RF MEMS switch used to analyse the design parameters and optimize them for the minimum actuation voltage and high contact force. An analytical model using isotropic AlN material properties used to obtain the optimal parameters. The optimized geometry of the device length, width and thickness are 2000 µm, 500 µm and 0.6 µm respectively obtained for the single beam RF MEMS switch. Low actuation voltage and high contact force with optimal geometry are less than 2 Vand 100 µN obtained by analytical analysis. Additionally, the single beam RF MEMS switch are optimized and validated by comparing the analytical and finite element modelling (FEM) analysis.