1. Spectroscopic and Microscopic Correlation of SRO-HFCVD Films on Quartz and Silicon
- Author
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José Alberto Luna López, José Álvaro David Hernández de la Luz, Haydee Patricia Martínez Hernández, Rafael Ordonez Flores, Gabriel Omar Mendoza Conde, Karim Monfil Leyva, Godofredo Garcia Salgado, Jesús Carrillo López, Zaira Jocelyn Hernández Simón, Raquel Ramírez Amador, Sergio Alfonso Pérez García, and Adan Luna Flores
- Subjects
pl ,Materials science ,Silicon ,Scanning electron microscope ,General Chemical Engineering ,Analytical chemistry ,chemistry.chemical_element ,02 engineering and technology ,Thermal treatment ,01 natural sciences ,Inorganic Chemistry ,X-ray photoelectron spectroscopy ,0103 physical sciences ,lcsh:QD901-999 ,General Materials Science ,Fourier transform infrared spectroscopy ,High-resolution transmission electron microscopy ,Spectroscopy ,silicon nanocrystal ,010302 applied physics ,sro ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,chemistry ,Transmission electron microscopy ,hrtem ,xps ,lcsh:Crystallography ,0210 nano-technology ,hfcvd - Abstract
This work is focused on making a correlation between results obtained by using spectroscopy and microscopy techniques from single and twofold-layer Silicon-Rich Oxide (SRO) films. SRO films single-layer and twofold-layer characterizations were compared considering the conditions as-grown and with thermal treatment at 1100 °, C for 60 min in a nitrogen atmosphere. The thickness of the single-layer film is 324.7 nm while for the twofold-layer film it is 613.2 nm, after heat-treated, both thicknesses decreased until 28.8 nm. X-ray Photoelectron Spectroscopy shows changes in the excess-silicon in single-layer SRO films, with 10% in as-grown films and decreases to 5% for the heat-treated films. Fourier Transform Infrared Spectroscopy (FTIR) exhibits three characteristic vibrational modes of SiO2, as well as, the vibrating modes associated with the Si-H bonds, which disappear after the heat treatment. With UV&ndash, Vis spectroscopy results we obtained the absorbance and the absorption coefficient for the SRO films in order to calculate the optical bandgap energy (Egopt), which increased with heat-treatment. The energy peaks of the photoluminescence spectra were used to calculate the silicon nanocrystal size, obtaining thus an average size of 1.89 ±, 0.32 nm for the as-grown layer, decreasing the size to 1.64 ±, 0.01 nm with the thermal treatment. On the other hand, scanning electron microscopy and high-resolution transmission electron microscopy images confirm the thickness of the twofold-layer SRO films as 628 nm for the as-grown layer and 540 nm for the layer with heat-treatment, and the silicon nanocrystal size of 2.3 ±, 0.6 nm for the films with thermal treatment.
- Published
- 2020