1. Band edge evolution of transparent ZnM2IIIO4 ( MIII=Co , Rh, Ir) spinels
- Author
-
Louis F. J. Piper, Kelvin H. L. Zhang, David O. Scanlon, Matthew J. Wahila, Tien-Lin Lee, Jiaye Zhang, Adam J. Jackson, and Zachary W. Lebens-Higgins
- Subjects
Physics ,M.2 ,Band gap ,Doping ,Electronic band ,Optical transparency ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Transparent electronics ,Crystallography ,0103 physical sciences ,Density functional theory ,Absorption (logic) ,010306 general physics ,0210 nano-technology - Abstract
$\mathrm{Zn}{M}_{2}^{III}{\mathrm{O}}_{4}$ (${M}^{III}=\text{Co}$, Rh, Ir) spinels have been recently identified as promising $p$-type semiconductors for transparent electronics. However, discrepancies exist in the literature regarding their fundamental optoelectronic properties. In this paper, the electronic structures of these spinels are directly investigated using soft/hard x-ray photoelectron and x-ray absorption spectroscopies in conjunction with density functional theory calculations. In contrast to previous results, ${\mathrm{ZnCo}}_{2}{\mathrm{O}}_{4}$ is found to have a small electronic band gap with forbidden optical transitions between the true band edges, allowing for both bipolar doping and high optical transparency. Furthermore, increased $d\ensuremath{-}d$ splitting combined with a concomitant lowering of Zn $s/p$ conduction states is found to result in a ${\mathrm{ZnCo}}_{2}{\mathrm{O}}_{4}\phantom{\rule{0.28em}{0ex}}(\text{ZCO})l{\mathrm{ZnRh}}_{2}{\mathrm{O}}_{4}\phantom{\rule{0.28em}{0ex}}(\text{ZRO})\ensuremath{\approx}{\mathrm{ZnIr}}_{2}{\mathrm{O}}_{4}\phantom{\rule{0.28em}{0ex}}(\text{ZIO})$ band gap trend, finally resolving long-standing discrepancies in the literature.
- Published
- 2019
- Full Text
- View/download PDF