1. Shear-strain-induced over 90° rotation of local magnetization in FeCoSiB/PMN-PT (011) multiferroic heterostructures
- Author
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Zhongqiang Hu, Yuxin Cheng, Renci Peng, Jingen Wu, Tiannan Yang, Zhiguang Wang, Tao Li, Ziyao Zhou, Ming Liu, Xinger Zhao, Weixiao Hou, Long Qing Chen, Yuqing Zhou, and Qin Du
- Subjects
010302 applied physics ,Materials science ,Polymers and Plastics ,Spintronics ,Magnetic domain ,Condensed matter physics ,Metals and Alloys ,Magnetoelectric effect ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Ferroelectricity ,Electronic, Optical and Magnetic Materials ,Condensed Matter::Materials Science ,Magnetization ,Magneto-optic Kerr effect ,0103 physical sciences ,Ceramics and Composites ,Shear stress ,Multiferroics ,0210 nano-technology - Abstract
Strain-mediated magnetoelectric effect can be utilized as an energy-efficient approach for spin manipulation. However, over 90° magnetization rotation is still challenging in un-patterned magnetic films, as the piezo-strain driven by ferroelectric domain switching is generally uniaxial rather than unidirectional, which limits the developments of non-volatile magnetic memory and logic devices. Here we demonstrate the rotation of local magnetization with a large angle of 136° by applying strains with a shear component at a fixed magnetic field of 45 Oe in FeCoSiB/PMN-PT (011) multiferroic heterostructures, revealed by a vector-resolved quantitative magneto-optical Kerr effect (MOKE) microscopy. Phase-field simulations confirm that the approximate 140° rotation of magnetization vectors is a consequence of the shear strain associated with ferroelectric/ferroelastic switching of PMN-PT (011) substrates. The visualization of over 90° magnetization rotation induced by the strain with a shear component paves the way for deterministic magnetization switching that has important implications in the energy-efficient spintronic devices.
- Published
- 2020