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Xenogeneic collagen co-assembly (XCCA) is a novel and efficient strategy for improving and regulating the performance of collagen assembled products. However, the effect of collagen molecular structures on XCCA has long been neglected and remains unclear. Herein, we investigated the telopeptide effect of collagen on XCCA by employing grass carp skin collagen (GCSC) with two different structures (tropocollagen and atelocollagen) and porcine skin collagen (PSC). Kinetic analysis showed that the co-assembly rate of PSC and grass carp skin atelocollagen (AC-GCSC) was faster than that of PSC and grass carp skin tropocollagen (TC-GCSC). Based on this observation, we further obtained different concentration dependences of XCCA by the alteration of telopeptide. Compared with PSC/TC-GCSC co-assembly, PSC/AC-GCSC co-assembly exhibited a higher sensitivity and a lower detection limit. Furthermore, telopeptide promoted the fabrication of thicker fibrils and improved the mobility of gels.

A sensitive and robust electrochemical aptasensor for determining dopamine (DA) was developed using a grass carp skin collagen-graphene oxide (GCSC-GO) composite as a transducer and a label-free aptamer as a biological recognition element for the first time. In order to fabricate this sensor, the GCSC-GO composite was firstly prepared by ultra-sonication method and characterized by atomic force microscope, infrared spectroscopy, Raman spectroscopy, and electrochemical impedance spectroscopy. Subsequently, a label-free DA-binding aptamer was immobilized through strong interaction between collagen and aptamer. The fabricated electrochemical aptasensor was used to determine DA by differential pulse voltammetry. The results indicated that the peak current changes of the developed aptasensor was linear relationship with the DA concentrations from 1 to 1000 nM, and the detection limit was 0.75 nM (S/N = 3). Moreover, the fabricated aptasensor showed high selectivity for DA. More importantly, the obtained aptasensor exhibited satisfactory recovery toward DA in human serum specimens with excellent stability.

Directly growing perovskite single crystals on charge carrier transport layers will unravel a promising route for the development of emerging optoelectronic devices. Herein, in situ growth of high‐quality all‐inorganic perovskite (CsPbBr3) single crystal arrays (PeSCAs) on cubic zinc oxide (c‐ZnO) is reported, which is used as an inorganic electron transport layer in optoelectronic devices, via a facile spin‐coating method. The PeSCAs consist of rectangular thin microplatelets of 6–10 µm in length and 2–3 µm in width. The deposited c‐ZnO enables the formation of phase‐pure and highly crystallized cubic perovskites via an epitaxial lattice coherence of (100)CsPbBr3∥(100)c‐ZnO, which is further confirmed by grazing incidence wide‐angle X‐ray scattering. The PeSCAs demonstrate a significant structural stability of 26 days with a 9 days excellent photoluminescence stability in ambient environment, which is much superior to the perovskite nanocrystals (PeNCs). The high crystallinity of the PeSCAs allows for a lower density of trap states, longer carrier lifetimes, and narrower energetic disorder for excitons, which leads to a faster diffusion rate than PeNCs. These results unravel the possibility of creating the interface toward c‐ZnO heterogeneous layer, which is a major step for the realization of a better integration of perovskites and charge carrier transport layers., In situ growth of high‐quality CsPbBr3 perovskite single crystal arrays directly on an electron transport layer of cubic zinc oxide (c‐ZnO) via a facile spin‐coating method is presented. CsPbBr3 and c‐ZnO can match moderately attributed to the epitaxial lattice coherence. The interface toward c‐ZnO heterogeneous layer is a major step toward the realization of better integration of perovskites and inorganic transport layers.

This paper reviews recent progress in the synthesis of near-infrared (NIR) lead chalcogenide (PbX; PbX=PbS, PbSe, PbTe) quantum dots (QDs) and their applications in NIR QDs based light emitting diodes (NIR-QLEDs). It summarizes the strategies of how to synthesize high efficiency PbX QDs and how to realize high performance PbX based NIR-QLEDs., 25 pages, 16 figures, review