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Black phosphorus (BP) is emerging as a promising candidate for electronic, optical, and energy storage applications. However, its poor ambient stability remains a critical challenge. Evaluation of few-layer liquid-exfoliated BP during ambient exposure using X-ray photoelectron spectroscopy and attenuated total reflectance Fourier transform infrared spectroscopy allows its surface chemistry to be investigated. Oxidation of liquid-exfoliated few-layer BP initially occurs through nonbridging oxide species, which convert to bridging oxide species after ambient exposure. We demonstrate the instability of these bridging oxide species, which undergo hydrolysis to form volatile phosphorus oxides and evaporate from the BP surface. FTIR spectroscopy, scanning transmission electron microscopy, and atomic force microscopy were used to confirm the formation of liquid oxides through a continuous oxidation cycle that results in the decomposition of BP. Furthermore, we show that the instability of few-layer BP originates from the formation of bridging oxide species.

Since the isolation of two-dimensional (2D) phosphorene, black phosphorus (BP) has gained popularity due to its high carrier mobility and tunable bandgap. Poor ambient stability of BP remains a key issue and impedes its use in electronic applications. Here we report a new stabilization strategy based on covalent functionalization of liquid exfoliated few-layer BP using aryl iodonium salts. Arylation of BP using iodonium salts enables covalent modification without inducing oxidation and alters the degradation chemistry of BP by inhibiting bridged oxygen formation through attachment to surface oxygen sites. In comparison, functionalization using aryl diazonium salts results in oxidation and aryl multilayer formation and does not adequately disrupt noncovalent solvent passivation. Aryl functionalization of BP using iodonium salts displays superior ambient stability compared to arylation using diazonium salts associated with greater covalent functionalization as characterized using X-ray photoelectron spectroscopy, scanning transmission electron microscopy, photoluminescence, and attenuated total reflectance infrared spectroscopy.

The nature of the surface roughness of electrolessly etched p-type Si nanowires (NWs) is examined using high resolution transmission electron microscopy and shown to comprise individual silicon nanocrystallites throughout the waviness of the roughness features. As the frequency of roughness features are believed to be sources of surface and boundary scattering, the thermal conductivity below the Casimir limit is still not fully explained. The frequency shift and development of asymmetry in the optical phonon mode in silicon was monitored by Raman scattering measurements as a function of temperature (>1000 K). We assessed the influence of Si NW roughness features on phonon scattering mechanisms including quantum confinement of phonons from roughness nanocrystals, boundary scattering, and optical phonon decay to interacting 3- and 4-phonon processes that may contribute to the cause of significant thermal conductivity suppression in rough Si nanowires. High temperature studies and detailed examination of the substrate of roughness revealed high frequency optical phonon contributions to thermal conductivity suppression.

Plasmonic photocatalysis has facilitated rapid progress in enhancing photocatalytic efficiency under visible light irradiation. Poor visible-light-responsive photocatalytic materials and low photocatalytic efficiency remain major challenges. Plasmonic metal-semiconductor heterostructures where both the metal and semiconductor are photosensitive are promising for light harvesting catalysis, as both components can absorb solar light. Efficiency of photon capture can be further improved by structuring the catalyst as a photonic crystal. Here we report the synthesis of photonic crystal plasmonic photocatalyst materials using Au nanoparticle-functionalized inverse opal (IO) photonic crystals. A catalyst prepared using a visible light responsive semiconductor (V2O5) displayed over an order of magnitude increase in reaction rate under green light excitation ($\lambda$=532 nm) compared to no illumination. The superior performance of Au-V2O5 IO was attributed to spectral overlap of the electronic band gap, localized surface plasmon resonance and incident light source. Comparing the photocatalytic performance of Au-V2O5 IO with a conventional Au-TiO2 IO catalyst, where the semiconductor band gap is in the UV, revealed that optimal photocatalytic activity is observed under different illumination conditions depending on the nature of the semiconductor. For the Au-TiO2 catalyst, despite coupling of the LSPR and excitation source at $\lambda$=532 nm, this was not as effective in enhancing photocatalytic activity compared to carrying out the reaction under broadband visible light, which is attributed to improved photon adsorption in the visible by the presence of a photonic band gap, and exploiting slow light in the photonic crystal to enhance photon absorption to create this synergistic type of photocatalyst., Comment: 19 pages, 8 figures, + Supporting information

New techniques to directly grow metal oxide nanowire networks without the need for initial nanoparticle seed deposition or postsynthesis nanowire casting will bridge the gap between bottom-up formation and top-down processing for many electronic, photonic, energy storage, and conversion technologies. Whether etched top-down, or grown from catalyst nanoparticles bottom-up, nanowire growth relies on heterogeneous material seeds. Converting surface oxide films, ubiquitous in the microelectronics industry, to nanowires and nanowire networks by the incorporation of extra species through interdiffusion can provide an alternative deposition method. It is shown that solution-processed thin films of oxides can be converted and recrystallized into nanowires and networks of nanowires by solid-state interdiffusion of ionic species from a mechanically contacted donor substrate. NaVO3 nanowire networks on smooth Si/SiO2 and granular fluorine-doped tin oxide surfaces can be formed by low-temperature annealing of a Na diffusion species-containing donor glass to a solution-processed V2 O5 thin film, where recrystallization drives nanowire growth according to the crystal habit of the new oxide phase. This technique illustrates a new method for the direct formation of complex metal oxide nanowires on technologically relevant substrates, from smooth semiconductors, to transparent conducting materials and interdigitated device structures.

Monolayer doping (MLD) involves the functionalization of semiconductor surfaces followed by an annealing step to diffuse the dopant into the substrate. We report an alternative doping method, oxide-MLD, where ultrathin SiO2 overlayers are functionalized with phosphonic acids for doping Si. Similar peak carrier concentrations were achieved when compared with hydrosilylated surfaces (∼2 × 1020 atoms/cm3). Oxide-MLD offers several advantages over conventional MLD, such as ease of sample processing, superior ambient stability, and minimal carbon contamination. The incorporation of an oxide layer minimizes carbon contamination by facilitating attachment of carbon-free precursors or by impeding carbon diffusion. The oxide-MLD strategy allows selection of many inexpensive precursors and therefore allows application to both p- and n-doping. The phosphonic acid-functionalized SiO2 surfaces were investigated using X-ray photoelectron spectroscopy and attenuated total reflectance Fourier transform infrared spectroscopy, whereas doping was assessed using electrochemical capacitance voltage and Hall measurements.

Oxide phase nanowires are important for applications ranging from optoelectronics to water splitting, but prove difficult to grow in high density with good crystalline quality and phase purity. Heterogeneous catalysts are typically required to nucleate growth. This work demonstrates that dispersions of oxide nanowires can be formed directly from solution processed oxide thin films. We also examine the effect of changes in applied pressure between a solution processed vanadium oxide thin film and a surface-contacted glass coupon on the catalyst-free formation of interconnected sodium vanadate nanowire structures by interdiffusion. Under different applied pressures, meshes of high quality crystalline oxide nanowires formed on the surface, and we examine the nature of phase conversion and nanostructure growth including larger shards composed of multiple conjoined nanowires are also examined. The optical properties of the oxides NWs formed by interdiffusion from oxide thin films show promising properties for application as antireflective coatings across a broadband spectral range. This interdiffusion technique is effective for high quality oxide nanowire growth without catalysts directly from insulating or conducting thin films by direct contact with a source of diffusing species.

Transparent thin films can now be site-selectively patterned and positioned on surface using mask-defined electrodeposition of one oxide and overcoating with a different solution-processed oxide, followed by thermal annealing. Annealing allows an interdiffusion process to create a new oxide that is entirely transparent. A primary electrodeposited oxide can be patterned and the secondary oxide coated over the entire substrate to form high color contrast coplanar thin film tertiary oxide. The authors also detail the phase formation and chemical state of the oxide and how the nature of the electrodeposited layer and the overlayer influence the optical clearing of the patterned oxide film.

Nanostructured surfaces are common in nature and exhibit properties such as antireflectivity (moth eyes), self-cleaning (lotus leaf), iridescent colors (butterfly wings), and water harvesting (desert beetles). We now understand such properties and can mimic some of these natural structures in the laboratory. However, these synthetic structures are limited since they are not easily mass produced over large areas due to the limited scalability of current technologies such as UV-lithography, the high cost of infrastructure, and the difficulty in nonplanar surfaces. Here, we report a solution process based on block copolymer (BCP) self-assembly to fabricate subwavelength structures on large areas of optical and curved surfaces with feature sizes and spacings designed to efficiently scatter visible light. Si nanopillars (SiNPs) with diameters of ∼115 ± 19 nm, periodicity of 180 ± 18 nm, and aspect ratio of 2–15 show a reduction in reflectivity by a factor of 100

The functionalization and subsequent monolayer doping of InGaAs substrates using a tin-containing molecule and a compound containing both silicon and sulfur was investigated. Epitaxial InGaAs layers were grown on semi-insulating InP wafers and functionalized with both sulfur and silicon using mercaptopropyltriethoxysilane and with tin using allyltributylstannane. The functionalized surfaces were characterized using X-ray photoelectron spectroscopy (XPS). The surfaces were capped and subjected to rapid thermal annealing to cause in-diffusion of dopant atoms. Dopant diffusion was monitored using secondary ion mass spectrometry. Raman scattering was utilized to nondestructively determine the presence of dopant atoms, prior to destructive analysis, by comparison to a blank undoped sample. Additionally, due to the As-dominant surface chemistry, the resistance of the functionalized surfaces to oxidation in ambient conditions over periods of 24 h and 1 week was elucidated using XPS by monitoring the As 3d core level for the presence of oxide components.

With advances in nanolithography and dry etching, top-down methods of nanostructuring have become a widely used tool for improving the efficiency of optoelectronics. These nano dimensions can offer various benefits to the device performance in terms of light extraction and efficiency, but often at the expense of emission color quality. Broadening of the target emission peak and unwanted yellow luminescence are characteristic defect-related effects due to the ion beam etching damage, particularly for III–N based materials. In this article we focus on GaN based nanorods, showing that through thermal annealing the surface roughness and deformities of the crystal structure can be “self-healed”. Correlative electron microscopy and atomic force microscopy show the change from spherical nanorods to faceted hexagonal structures, revealing the temperature-dependent surface morphology faceting evolution. The faceted nanorods were shown to be strain- and defect-free by cathodoluminescence hyperspectral imaging, micro-Raman, and transmission electron microscopy (TEM). In-situ TEM thermal annealing experiments allowed for real time observation of dislocation movements and surface restructuring observed in ex-situ annealing TEM sampling. This thermal annealing investigation gives new insight into the redistribution path of GaN material and dislocation movement post growth, allowing for improved understanding and in turn advances in optoelectronic device processing of compound semiconductors.

Both transparent oxides and transparent conductive oxides are of particular research interest for future applications in flexible, optically transparent thin film transistors and luminescent devices. We report the formation of a transparent oxide material based on the interdiffusion of Na-O and Si-O species with dip-coated V2O5 thin films on a borosilicate glass substrate. The deposition process used a facile solution processed dip-coating technique in the high-rate draining regime. Liquid precursors of vanadium alkoxide and alkoxide-polyethylene glycol mixtures were used for thin film deposition. We examine the effect of annealing condition on the phase conversion process, morphology and optical transmittance due to the conversion of the V2O5 films to completely transparent ternary mixed metal oxide thin films. The work also examines the role of polymer-assisted deposition on the development of the V-O-Na-Si transparent thin films during different annealing conditions. Polymer-assisted V2O5 thin films on glass are shown to convert to optically clear thin films during annealing, with a transparency >95% across the visible spectrum, and a blue-shift of the absorption edge to maintain >90% transparency at 380 nm.

Solution processed metal oxide thin films are important for modern optoelectronic devices ranging from thin film transistors to photovoltaics and for functional optical coatings. Solution processed techniques such as dip-coating, allow thin films to be rapidly deposited over a large range of surfaces including curved, flexible or plastic substrates without extensive processing of comparative vapour or physical deposition methods. To increase the effectiveness and versatility of dip-coated thin films, alterations to commonly used precursors can be made that facilitate controlled thin film deposition. The effects of polymer assisted deposition and changes in solvent-alkoxide dilution on the morphology, structure, optoelectronic properties and crystallinity of vanadium pentoxide thin films was studied using a dip-coating method using a substrate withdrawal speed within the fast-rate draining regime. The formation of sub-100 nm thin films could be achieved rapidly from dilute alkoxide based precursor solutions with high optical transmission in the visible, linked to the phase and film structure. The effects of the polymer addition was shown to change the crystallized vanadium pentoxide thin films from a granular surface structure to a polycrystalline structure composed of a high density of smaller in-plane grains, resulting in a uniform surface morphology with lower thickness and roughness.

High quality 2D and 3D inverse opals and hollow sphere arrays of vanadium oxide are grown on conductive substrates from colloidal polymer sphere templates formed by electrophoretic deposition or surfactant-assisted dip-coating. Inverse opals (IOs) are formed using variants of solution drop-casting, N2-gun assisted infiltration and high-rate (200 mm min−1) iterative dip-coating methods. Through Raman scattering, transmission electron microscopy and optical diffraction, we show how the oxide phase, crystallinity and structure are inter-related and controlled. Opal template removal steps are demonstrated to determine the morphology, crystallinity and phase of the resulting 2D and 3D IO structures. The ability to form high quality 2D IOs is also demonstrated using UV Ozone removal of PMMA spheres. Rapid hydrolysis of the alkoxide precursor allows the formation of 2D arrays of crystalline hollow spheres of V2O5 by utilizing over-filling during iterative dip-coating. The methods and crystallinity control allow 2D and 3D hierarchically structured templates and inverse opal vanadium oxides directly on conductive surfaces. This can be extended to a wide range of other functional porous materials for energy storage and batteries, electrocatalysis, sensing, solar cell materials and diffractive optical coatings.

peer-reviewed By using Si(100) with different dopant type (n(++)-type (As) or p-type (B)), we show how metal-assisted chemically etched (MACE) nanowires (NWs) can form with rough outer surfaces around a solid NW core for p-type NWs, and a unique, defined mesoporous structure for highly doped n-type NWs. We used high resolution electron microscopy techniques to define the characteristic roughening and mesoporous structure within the NWs and how such structures can form due to a judicious choice of carrier concentration and dopant type. The n-type NWs have a mesoporosity that is defined by equidistant pores in all directions, and the inter-pore distance is correlated to the effective depletion region width at the reduction potential of the catalyst at the silicon surface in a HF electrolyte. Clumping in n-type MACE Si NWs is also shown to be characteristic of mesoporous NWs when etched as high density NW layers, due to low rigidity (high porosity). Electrical transport investigations show that the etched nanowires exhibit tunable conductance changes, where the largest resistance increase is found for highly mesoporous n-type Si NWs, in spite of their very high electronic carrier concentration. This understanding can be adapted to any low-dimensional semiconducting system capable of selective etching through electroless, and possibly electrochemical, means. The process points to a method of multiscale nanostructuring NWs, from surface roughening of NWs with controllable lengths to defined mesoporosity formation, and may be applicable to applications where high surface area, electrical connectivity, tunable surface structure, and internal porosity are required. (C) 2013 AIP Publishing LLC. PUBLISHED peer-reviewed

A comprehensive review of recent advances in solution processing and growth of metal-oxide thin films for electronic and photonic devices is presented, with specific focus on precise solution-based technological coatings for electronics and optics, and new concepts for oxide material growth for electrochemical, catalytic, energy storage and conversion systems, information technology, semiconductor device processing and related devices. Throughout, the nature of the soluble precursors solutions and their relationship to film formation process by various solution coating techniques are collated and compared, highlighting advantages in precursor design for creating complex oxides for devices. Because of the versatility of solution-processable oxides and functional material coating, it is important to capture the advances made in oxide deposition for plastic electronics, see-through and wearable devices, and high-fidelity thin film transistors on curved or flexible displays. Solution processing, even for oxides, allows control over composition, thickness, optical constants, porosity, doping, tunable optical absorbance/transmission, band structure engineering, 3D-substrate coating, complex composite oxide formation and multi-layered oxide systems that are more difficult to achieve using chemical vapor deposition (CVD) or atomic layer deposition (ALD) processes. We also discuss limitations of solution processing for some technologies and comment on the future of solution-based processing of metal-oxide materials for electronics, photonics and other technologies.

The electronics industry is beginning to show interest in 2D molybdenum disulfide (2D‐MoS2) as a potential device material due to its low band gap and high mobility. However, current methods for its synthesis are not “fab” friendly and require harsh environments and processes. Here, a novel method to prepare MoS2 nanowire arrays and layered structures via self‐assembly of a block copolymer system is reported. Well‐controlled films of microphase separated line‐space nanopatterns have been achieved by solvent annealing process. The self‐assembled films are used as “templates” for the generation of nonstoichometric molybdenum oxide by in situ inclusion technique following UV/Ozone treatment. Well‐ordered array of MoS2 and a layered structure are then prepared by chemical vapor deposition using sulfur powder at lower temperature. The surface morphology, crystal structure, and phases are examined by different microscopic and spectroscopic techniques. This strategy can be extended to several other 2D materials systems and open the pathway toward better optoelectronic and nanoelectromechanical systems.

Si nanowires (NWs) are shown to develop internal mesoporosity during metal assisted chemical etching from Si wafers. The onset of internal porosity in n+-Si(100) compared to p-Si(100) is examined through a systematic investigation of etching parameters (etching time, AgNO3 concentration, HF % and temperature). Electron microscopy and Raman scattering show that specific etching conditions reduce the size of the internal Si nanocrystallites in the internal mesoporous structure to 3–5 nm. Mesoporous NWs are found to have diameters as large as 500 nm, compared to ~100 nm for p-NWs that develop surface roughness. Etching of Si (100) wafers results in (100)-oriented NWs forming a three-fold symmetrical surface texture, without internal NW mesoporosity. The vertical etching rate is shown to depend on carrier concentration and degree of internal mesoporosity formation. Raman scattering of the transverse optical phonon and photoluminescence measurements confirm quantum size effects, phonon scattering and visible intense red light emission between 685 and 720 nm in internally mesoporous NWs associated with the etching conditions. Laser power heating of NWs confirms phonon confinement and scattering, which is demonstrated to be a function of the internal mesoporosity development. We also demonstrate the limitation of mesoporosity formation in n+-Si NWs and development of porosity within p-Si NWs by controlling the etching conditions. Lastly, the data confirm that phonon confinement and scattering often reported for Si NWs is due to surface-bound and internal nanostructure, rather than simply a diameter reduction in NW materials.

Sub-20 nm diameter Ge nanowires with narrow size distributions were grown from Ag nanoparticle seeds in a supercritical fluid (SCF) growth process. The mean Ge nanowire diameter and size distribution was shown to be dependent upon Ag nanoparticle coalescence, using both spin-coating and a block copolymer (BCP) templating method for particle deposition. The introduction of a metal assisted etching (MAE) processing step in order to "sink" the Ag seeds into the growth substrate, prior to nanowire growth, was shown to dramatically decrease the mean nanowire diameter from 27.7 to 14.4 nm and to narrow the diameter distributions from 22.2 to 6.8 nm. Hence, our BCP-MAE approach is a viable route for controlling the diameters of semiconductor nanowires whilst also ensuring a narrow size distribution. The MAE step in the process was found to have no detrimental effect on the length or crystalline quality of the Ge nanowires synthesised.

Embedding 2D layered materials into polymers and other materials as composites has resulted in the development of ultrasensitive pressure sensors, tunable conductive stretchable polymers, and thermoelectric coatings. As a wettable paint or ink, many 2D materials may be penciled, printed, or coated onto a range of surfaces for a variety of applications. However, the intrinsic conductive properties of painted coatings using 2D and layered materials are not completely understood, and conductive polymer additives may mask underlying properties such as directional conductivity. We report a process for making a paint from solvent-exfoliated Bi2Te3 into solution-dispersible 2D and few-layer (multiple quintuple) nanosheet inks, that form smooth, uniform paint blends at several concentrations of Bi2Te3. The individual solvent-exfoliated nanosheets are edge-coated by (poly)ethylene glycol to produce a paint, stable over extended period in solution. Electrical transport is found to be sensitive to aspect ratio, and conduction along the painting direction is suppressed for longer strips so long as the aspect ratio is high (4-10× or more), but for short and wide paint strips (aspect ratio ≤1), conductance is improved by a factor of 3×. Square 2D paint regions show no clear directional preference for conductance at room temperature but are markedly affected by higher temperatures. Conductivity along a preferential conduction pathway through the nanosheet ensemble is modulated by 2D nanosheet stacking along the direction of paint application for a given aspect ratio. This paint and insights into geometrical 2D composite conduction may have implications for conductive composites, thermoelectrics, and writable circuits using 2D material paints or inks. Fil: Carroll, Elaine. University College Cork; Irlanda Fil: Buckley, Darragh. University College Cork; Irlanda Fil: Mogili V., Vishnu N.. Centro Nacional de Pesquisa em Energia e Materiais. Brazilian Nanotechnology National Laboratory; Brasil Fil: McNulty, David. University College Cork; Irlanda Fil: Moreno, Mario Sergio Jesus. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina Fil: Glynn, Colm. University College Cork; Irlanda Fil: Collins, Gillian. University College Cork; Irlanda Fil: Holmes, Justin D.. University College Cork; Irlanda. Tyndall National Institute; Irlanda. Trinity College Dublin; Irlanda Fil: Razeeb, Kafil M.. Tyndall National Institute; Irlanda Fil: O'Dwyer, Colm. University College Cork; Irlanda. Tyndall National Institute; Irlanda