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In the search for chemically stable two-dimensional (2D) materials with high in-plane mobility, proper bandgap, and compatibility with vapor-based fabrication, van der Waals semiconductor SiP has become a potential candidate as a robust variation of black phosphorous. While bulk SiP crystals were synthesized in the 1970s, the vapor-based synthesis of SiP nanostructures or thin films is still absent. We here report the first chemical vapor growth of SiP nanostructures on SiO2/Si substrate. SiP islands with lateral size up to 20 µm and showing well-defined Raman signals were grown on SiO2/Si substrate or on SiP-containing concentric rings. The presence of SiP phase is confirmed by XRD. The formation of rings and islands is explained by a multiple coffee ring growth model where a dynamic fluctuation of droplet growth front induces the topography of concentric ring surfaces. This new growth method might shed light on the controlled growth of group IV-III high-mobility 2D semiconductors.

低温电输运特性是非晶态材料理论研究中的关键问题. 通过在Ti-Zr-Hf-Cu-Ni高熵非晶合金薄膜材料中掺入氧, 可以诱导其在低温下显示出异常的电输运行为. 低于8 K时, 掺氧高熵非晶合金薄膜的电阻率分别与温度和外加磁场强度的1/2次方（即 T 1/2和 H 1/2）呈线性关系. 研究表明, 氧的掺入增强了高熵非晶合金薄膜中电子-电子间的库伦作用和电子自旋之间的交互作用, 从而导致含氧高熵非晶合金薄膜的低温异常磁电输运行为. 因此，我们可通过对高熵非晶合金材料掺氧实现对该材料低温导电性能的调控.