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The term tunnel electroresistance (TER) denotes a fast, non-volatile, reversible resistance switching triggered by voltage pulses in ferroelectric tunnel junctions. It is explained by subtle mechanisms connected to the voltage-induced reversal of the ferroelectric polarization. Here we demonstrate that effects functionally indistinguishable from the TER can be produced in a simpler junction scheme—a direct contact between a metal and an oxide—through a different mechanism: a reversible redox reaction that modifies the oxide’s ground-state. This is shown in junctions based on a cuprate superconductor, whose ground-state is sensitive to the oxygen stoichiometry and can be tracked in operando via changes in the conductance spectra. Furthermore, we find that electrochemistry is the governing mechanism even if a ferroelectric is placed between the metal and the oxide. Finally, we extend the concept of electroresistance to the tunnelling of superconducting quasiparticles, for which the switching effects are much stronger than for normal electrons. Besides providing crucial understanding, our results provide a basis for non-volatile Josephson memory devices., The non-volatile switching of tunnel electroresistance in ferroelectric junctions provides the basis for memory and neuromorphic computing devices. Rouco et al. show tunnel electroresistance in superconductor-based junctions that arises from a redox rather than ferroelectric mechanism and is enhanced by superconductivity.

Superconductors are essential in many present and future technologies, from large-scale devices for medical imaging, accelerators, or fusion experiments to ultra-low-power superconducting electronics. However, their potential applicability, and particularly that of high-temperature superconductors (HTS), is severely affected by limited performances at large magnetic fields and high temperatures, where their use is most needed. One of the main reasons for these limitations is the presence of quantized vortices, whose movements result in losses, internal noise, and reduced performances. The conventional strategy to overcome the flow of vortices is to pin them along artificial defects. Here, we theoretically and experimentally demonstrate that critical-current density in high-temperature superconductors can reach unprecedented high values at high fields and temperatures by preventing vortex entry. By tailoring the geometry, that is, reducing the width, W, of nanowire-patterned HTS films, the range of the Meissner state, for which no vortices are present, is extended up to very large applied field values, on the order of ∼1 T. Current densities on the order of the depairing current can be sustained under high fields for a wide range of temperatures. Results may be relevant both for devising new conductors carrying depairing-current values at high temperatures and large magnetic fields and for reducing flux noise in sensors and quantum systems., We acknowledge financial support from Spanish Ministry of Economy and Competitiveness through the “Severo Ochoa” Programme for Centres of Excellence (SEV-2015-0496), COACHSUPENERGY project (MAT2014-51778-C2-1-R), and SuMaTe (RTI2018-095853-B-C21) cofinanced by the European Regional Development Fund, and project MAT2016-79426-P (Agencia Estatal de Investigacion/Fondo ́ Europeo de Desarrollo Regional). We also thank support from the European Union for NANOCOHYBRI project (Cost Action CA 16218) and from the Catalan Government projects SGR-2017-1519 and 2017-SGR-105. A.S. acknowledges a grant from ICREA Academia, funded by the Generalitat de Catalunya. V.R. Acknowledges EU H2020 research and innovation programme (Marie Sklodowska-Curie IF grant agreement OXWALD 838693). We acknowledge the use of ICTS-CNM facilities and ICMAB scientific and technical services. We thank Alexey V. Pan for fruitful discussions.

Magnetoelectric coupling in artificial multiferroic interfaces can be drastically affected by the switching of oxygen vacancies and by the inversion of the ferroelectric polarization. Disentangling both effects is of major importance toward exploiting these effects in practical spintronic or spinorbitronic devices. We report on the independent control of ferroelectric and oxygen vacancy switching in multiferroic tunnel junctions with a La_(0.7)Sr_(0.3)MnO_3 bottom electrode, a BaTiO_3 ferroelectric barrier, and a Ni top electrode. We show that the concurrence of interface oxidation and ferroelectric switching allows for the controlled inversion of the interface spin polarization. Moreover, we show the possibility of a spin-memristor where the controlled oxidation of the interface allows for a continuum of memresistance states in the tunneling magnetoresistance. These results signal interesting new avenues toward neuromorphic devices where, as in practical neurons, the electronic response is controlled by electrochemical degrees of freedom.

In transition metal perovskites ABO(3), the physical properties are largely driven by the rotations of the BO6 octahedra, which can be tuned in thin films through strain and dimensionality control. However, both approaches have fundamental and practical limitations due to discrete and indirect variations in bond angles, bond lengths, and film symmetry by using commercially available substrates. Here, we introduce modulation tilt control as an approach to tune the ground state of perovskite oxide thin films by acting explicitly on the oxygen octahedra rotation modes-that is, directly on the bond angles. By intercalating the prototype SmNiO3 target material with a tilt-control layer, we cause the system to change the natural amplitude of a given rotation mode without affecting the interactions. In contrast to strain and dimensionality engineering, our method enables a continuous fine-tuning of the materials' properties. This is achieved through two independent adjustable parameters: the nature of the tilt-control material (through its symmetry, elastic constants, and oxygen rotation angles), and the relative thicknesses of the target and tilt-controlmaterials. As a result, a magnetic and electronic phase diagram can be obtained, normally only accessible by A-site element substitution, within the single SmNiO3 compound. With this unique approach, we successfully adjusted the metal-insulator transition (MIT) to room temperature to fulfill the desired conditions for optical switching applications.

The shape of the electric-field—current-density (E-J) curve is determined by flux pinning and also by dynamics of vortices. Here, we propose a novel methodology to study the normalized flux creep rate S in YBa2Cu3O7−δ measured from E-J curves obtained by electrical transport measurements that provides a fast and versatile way to foresee the flux magnetic relaxation in films and disentangle angular flux creep contributions by the scaling of the isotropic contribution of S. After a detailed comparison of various pristine and nanocomposite films with differentiated nanostructures, we focus on the roles that intrinsic pinning and stacking faults (YBa2Cu4O8-intergrowths) play when the magnetic field is applied parallel to the superconducting CuO2 planes. This study reveals that the emerging intergrowths provide advanced pinning properties that additionally reduce the thermal activated flux magnetic relaxation. For this purpose, creep analysis becomes a very appropriate tool to elucidate the dominance of the different pinning sites at different regions of the magnetic-field—temperature diagram.

Ferroelectric field-effect doping has emerged as a powerful approach to manipulate the ground state of correlated oxides, opening the door to a different class of field-effect devices. However, this potential is not fully exploited so far, since the size of the field-effect doping is generally much smaller than expected. Here we study the limiting factors through magnetotransport and scanning transmission electron and piezoresponse force microscopy in ferroelectric/superconductor (YBa₂Cu₃O_(7-δ)/BiFeO₃) heterostructures, a model system showing very strong field effects. Still, we find that they are limited in the first place by an incomplete ferroelectric switching. This can be explained by the existence of a preferential polarization direction set by the atomic terminations at the interface. More importantly, we also find that the field-effect carrier doping is accompanied by a strong modulation of the carrier mobility. Besides making quantification of field effects via Hall measurements not straightforward, this finding suggests that ferroelectric poling produces structural changes (e.g., charged defects or structural distortions) in the correlated oxide channel. Those findings have important consequences for the understanding of ferroelectric field effects and for the strategies to further enhance them.

High-resolution focused ion beam lithography has been used to fabricate YBa2Cu3O7-x (YBCO) wires with nanometric lateral dimensions. In the present work, we investigate Flux-flow instabilities in nanowires of different widths, showing sudden voltage switching jumps from the superconducting to the normal state. We present an extensive study on the temperature and field dependence of the switching characteristics which reveal that voltage jumps become less abrupt as the temperature increases, and disappear at the vortex-liquid state. On the contrary, the current distribution at the critical point becomes narrower at high temperatures. Sharp voltage switchings very close to the critical current density can be obtained by reducing the width of the nanowires, making them very appealing for practical applications., We acknowledge financial support fromthe SpanishMinistry of Economy and Competitiveness through the “Severo Ochoa” Programme for Centres of Excellence in R&D (SEV-2015-0496), CONSOLIDER Excellence Network (MAT2015-68994-REDC), COACHSUPENERGY project (MAT2014-51778-C2-1-R, co-financed by the European Regional Development Fund). We also are grateful for support from the European Union for ULTRASUPERTAPE project (ERC-2014-ADG-669504), NANOCOHYBRI project (Cost Action CA 16218), and from the Catalan Government with SGR-2017 and Xarmae. We acknowledge the use of ICTS-CNM facilities and ICMAB scientific and technical services.

In all-oxide ferroelectric (FE) - superconductor (S) bilayers, due to the low carrier concentration of oxides compared to transition metals, the FE interfacial polarization charges induce an accumulation (or depletion) of charge carriers in the S. This leads either to an enhancement or a depression of its critical temperature depending on FE polarization direction.Here we exploit this effect at a local scale to define planar weak-links in high-temperature superconducting wires. This is realized in BiFeO3(FE)/YBa2Cu3O7(S)bilayers in which the remnant FE domain structure is written at will by locally applying voltage pulses with a conductive-tip atomic force microscope. In this fashion, the FE domain pattern defines a spatial modulation of superconductivity. This allows us to write a device whose electrical transport shows different temperature regimes and magnetic field matching effects that are characteristic of Josephson coupled weak-links. This illustrates the potential of the ferroelectric approach for the realization of high-temperature superconducting devices.

Superconductivity and ferromagnetism are two antagonistic phenomena that combined can lead to a rich phenomenology of interactions, resulting in novel physical properties and unique functionalities. Here we propose an original hybrid system formed by a high-temperature superconducting film, patterned with antidots, and with ferromagnetic nano-rods grown inside them. This particular structure exhibits the synergic influence of superconductor (SC) - ferromagnetic (FM) stray fields, in both the superconducting behaviour of the film and the three-dimensional (3D) magnetic structure of nano-rods. We show that FM stray fields directly influence the critical current density of the superconducting film. Additional functionalities appear due to the interaction of SC stray fields, associated to supercurrent loops, with the non-trivial 3D remanent magnetic structure of FM nano-rods. This work unravels the importance of addressing quantitatively the effect of stray magnetic fields from both, the superconductor and the ferromagnet in hybrid magnetic nano-devices based on high temperature superconductors., This work has been supported by Spanish MINECO and FEDER (MAT2014-51778-C2-1R, CSD2007-0041, MAT2014-51982-C2-1-R and MAT2015-69725-REDT, MAT2016-79426-P), Severo Ochoa SEV2015-0496 program, Generalitat de Catalunya (2014-SGR-00753, 2014-SGR-150, 2014-PROD00059), Aragon regional government projects, including FEDER funding, European Seventh Framework Program (FP7/2007-2013) under grant agreement 312284, EU-NMP-LA-2012-280432 EUROTAPES project and Cost Actions MP1201 and CM1301 (CELINA). A. Sanchez acknowledges a grant from ICREA Academia, funded by the Generalitat de Catalunya. We are grateful to I. Rivas and R. Valero from LMA-INA (Zaragoza, Spain) for experimental help in the cobalt growth and Ar+ milling processes, and Dr C. Magén and Dr. P. Algarabel from LMA-INA (Zaragoza, Spain) for facilitating the use of their high performance computing server to perform the micromagnetic simulations. We acknowledge R. Morales from UPV/EHU and Ikerbasque, A. Fernández-Pacheco from U. Cambridge and S. Valencia from Helmholtz-Zentrum, Berlin for fruitful discussions.

Since the discovery of high-temperature superconductors (HTSs), most efforts of researchers have been focused on the fabrication of superconducting devices capable of immobilizing vortices, hence of operating at enhanced temperatures and magnetic fields. Recent findings that geometric restrictions may induce self-arresting hypervortices recovering the dissipation-free state at high fields and temperatures made superconducting strips a mainstream of superconductivity studies. Here we report on the geometrical melting of the vortex lattice in a wide YBCO submicron bridge preceded by magnetoresistance (MR) oscillations fingerprinting the underlying regular vortex structure. Combined magnetoresistance measurements and numerical simulations unambiguously relate the resistance oscillations to the penetration of vortex rows with intermediate geometrical pinning and uncover the details of geometrical melting. Our findings offer a reliable and reproducible pathway for controlling vortices in geometrically restricted nanodevices and introduce a novel technique of geometrical spectroscopy, inferring detailed information of the structure of the vortex system through a combined use of MR curves and large-scale simulations.

International audience; We study the general problem of a manifold of interacting elastic lines whose spatial correlations are strongly affected by the competition between random and ordered pinning. This is done through magneto-transport experiments with YBa2Cu3O7−δ thin films that contain a periodic vortex pinning array created via masked ion irradiation, in addition to the native random pinning. The strong field-matching effects we observe suggest the prevalence of periodic pinning, and indicate that at the matching field each vortex line is bound to an artificial pinning site. However, the vortex-glass transition dimensionality—quasi-two dimensional instead of the usual three dimensional—evidences reduced vortex-glass correlations along the vortex line. This is also supported by an unusual angular dependence of the magneto-resistance, which greatly differs from that of Bose-glass systems. A quantitative analysis of the angular magneto-resistance allows us to link this behaviour to the enhancement of the system anisotropy, a collateral effect of the ion irradiation.

© 2015 IOP Publishing Ltd and Deutsche Physikalische Gesellschaft. Rectified flux motion arising from the collective effect of many interacting vortices is obtained in a specially designed superconducting device. Ratchet structures with different asymmetric pinning potentials are generated by tuning the size, depth, and distribution of triangular blind-antidots in a high-temperature superconducting film. We experimentally and theoretically demonstrate that the amplitude and sign of the rectified vortex motion can be finely tuned with the pattern geometry. Two different dynamical regimes depending on the nature of vortices initiating the dissipation are identified, which can control the rectified vortex motion., This work has been supported by MINECO(MAT2014-51778-C2-1R, MAT2012-35370, CSD2007-0041, IPT- 2011-1090-920000), Generalitat de Catalunya (SGR2014-00753, 2014SGR150, XaRMAE), EU-FP7 NMP-LA- 2012-280432 EUROTAPES project and Cost Action MP1201.VR acknowledges the JAE-CSIC PhD grant. AS acknowledges funding from an ICREA Academia award.

In this letter we use high resolution scanning transmission electron microscopy to study epitaxial YBa2Cu3O7−δ (YBCO) nanocomposite thin films. We find that twin boundaries (TB) in YBCO nanocomposite thin films are disturbed by the presence of secondary phase nanoparticles as well as by intergrowths. Secondary phases promote the nucleation of TBs and, at the same time, result in bending, decreasing and changing the TB's spacing. On the other hand, the local strain ensuing from the partial dislocation associated to Y248 and Y125 intergrowths break the vertical coherence of TBs. This interaction results in a complex domain structure where twin boundary coherence is no longer satisfied and twin spacing is reduced down to a few nanometers precluding vortex channeling at low temperatures.