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The present work reports the in-situ ion beam induced luminescence measurements using 2 MeV proton excitation of LiF single crystal with the aim of obtaining a further insight on F-type centers kinetics and its correlation with the self-trapped exciton (STE). It is found that the STE luminescence intensity decreases from the beginning of irradiation. While the dose-dependent evolution of F3+ and F2 centers reveals three kinetic stages: (i) linear increase from the beginning of irradiation up to 10.1 MGy, followed by (ii) monotonic decrease to 18.1 MGy, and (iii) steady state from 18.1 to 26.2 MGy where the luminescence intensity remains constant. The STE luminescence completely extinguished at high dose; 18.1 MGy in our case. Whereas, the F3+ and F2 luminescence persist and remain constant above 18.1 MGy. The latter behavior revealed in the present study can be useful for LiF application in radiation dosimetry and an imaging detector.

Interconnections between Ag- NWs Build by Argon Ions Beam Irradiation Interconnection between Ag-NWs is essential for the integration and assembly of NWs networks to enable optoelectronics and nanoelectronics applications. In this report, joining of Ag-NWs through argon ion beam irradiation technology is demonstrated. A range of experimental traits of constructing X-, and II-shapes molecular junctions between Ag nanowires and the utilization of the argon ion beam irradiation induced nanowelding technique to form functional metal NWs networks is conferred. Scanning electron microscopy, X-ray diffraction and transmission electron microscopy results revealed that Ag-NWs are effectively connected to each other on intersecting positions. These networks are optically transparent and crystal structure remained un-damaged. Besides, technical hindrances facing the ion irradiation induced nanowelding technology are also discussed. A perspective is given for using argon ion irradiation induced welding technique for the construction of random networks of well-connected nanowires.

In the present work, Zinc Sulphide (ZnS) thin films deposited by resistive heating technique on BK-7 glass substrate. Optical and structural characterizations of ZnS films have been carried out along with the post-deposition annealing at different temperatures. The thickness of the film is monitored by quartz crystal monitor and found to be 500[Formula: see text]nm. Fourier transform infrared (FTIR) spectroscopy provides the qualitative analysis of ZnS film before and after annealing at different temperatures. The optical investigation shows that the as-deposited and annealed ZnS film display the high optical transmittance of (64–68%) in the visible/near infrared region. The optical energy gaps of present as-deposited and annealed ZnS film vary in the range of 3.32–3.18[Formula: see text]eV with the change in annealing temperature.

A random two-dimensional large scale nano-network of silver nanowires (Ag-NWs) is fabricated by MeV hydrogen (H+) ion beam irradiation. Ag-NWs are irradiated under H+ ion beam at different ion fluences at room temperature. The Ag-NW network is fabricated by H+ ion beam-induced welding of Ag-NWs at intersecting positions. H+ ion beam induced welding is confirmed by transmission electron microscopy (TEM) and scanning electron microscopy (SEM). Moreover, the structure of Ag NWs remains stable under H+ ion beam, and networks are optically transparent. Morphology also remains stable under H+ ion beam irradiation. No slicings or cuttings of Ag-NWs are observed under MeV H+ ion beam irradiation. The results exhibit that the formation of Ag-NW network proceeds through three steps: ion beam induced thermal spikes lead to the local heating of Ag-NWs, the formation of simple junctions on small scale, and the formation of a large scale network. This observation is useful for using Ag-NWs based devices in upper space where protons are abandoned in an energy range from MeV to GeV. This high-quality Ag-NW network can also be used as a transparent electrode for optoelectronics devices.

In this paper, effect of oxygen (O[Formula: see text]) ion irradiation on the properties of polycrystalline cubic structure CdTe thin films has been investigated. CdTe thin films were irradiated with O[Formula: see text] ions of energy 80[Formula: see text]keV at different fluence ranging from [Formula: see text] to [Formula: see text] [Formula: see text]ion/cm2 at room temperature. At [Formula: see text] [Formula: see text]ion/cm2 O[Formula: see text] ions fluence, the CdTe structure was maintained while XRD peaks of cubic phase were shifted toward lower angles. At [Formula: see text] [Formula: see text]ion/cm2 O[Formula: see text] ions fluence, cubic structure of CdTe thin films was transformed into hexagonal structure. In addition, electrical resistivity and optical bandgap were decreased with increasing O[Formula: see text] ion beam irradiation.