1. Impact of hydrogen anneal on low frequency noise of n- and p-MOSFET
- Author
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S. Carniello, E. Stueckler, E.G. Ioannidis, Walter Pflanzl, E. Seebacher, and V. Vescoli
- Subjects
010302 applied physics ,Materials science ,Hydrogen ,business.industry ,Infrasound ,Electrical engineering ,chemistry.chemical_element ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Noise (electronics) ,Spectral line ,Electronic, Optical and Magnetic Materials ,CMOS ,chemistry ,0103 physical sciences ,MOSFET ,Node (physics) ,Materials Chemistry ,Optoelectronics ,Wafer ,Electrical and Electronic Engineering ,0210 nano-technology ,business - Abstract
In this paper, we present a detailed investigation of the impact of hydrogen anneal on the low frequency noise spectra of n- and p-MOS devices from an advanced CMOS technology node. We investigate the impact of hydrogen anneal in three different wafers, one with one time hydrogen anneal step (1×H2), one with two times (2×H2) and one without hydrogen anneal (w/o H2). The results demonstrate that the carrier number with correlated mobility fluctuations model can explain accurately the 1/f noise results. A significant reduction of the 1/f noise level was observed for the device treated with two times hydrogen anneal.
- Published
- 2016