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Many extension and generalization of fuzzy sets have been introduced and studied in the literature. Picture fuzzy set acquired more concentration in the domain of decision making, as many real time circumstances might have choices of more than one and researchers are looking for optimum choice/decision. Picture fuzzy digraph is a generalization of intuitionistic fuzzy set and fuzzy graph. In this paper, we redefine some preliminary operations of picture fuzzy graph and it is referred as picture fuzzy digraph (in short PFDG). We discuss some arithmetic operations and relations among PFDG. We further proposed a method to solve a shortest path problem using score function.

Nano thin films of SnS were prepared for solar cell application as absorber layer to analyse energy band gap. Thin films of Tin Sulphide (SnS) were deposited on glass substrate in room temperature by Successive Ionic Layer Adsorption and Reaction method. The changes in the properties of SnS were studied, when a complexing agent ethylenediaminetetraaceticacid (EDTA) added. The deposition parameters such as Dip duration is 35 s, Ex-dip duration is 5 s, Number of cycles are 25 and Number of dips are four were optimized to obtain good quality of SnS films. The Structural, morphological, topographical and optical properties of EDTA added Tin Sulphide thin films were characterized by X-ray diffraction (XRD), SEM, AFM, UV–Vis spectrometry and FT-IR techniques. The deposited SnS films are in amorphous and polycrystalline structure. The UV–Vis spectra of SnS films in the wavelength range of 200–900 nm have been observed to find the direct band gap. The band gap energy (Eg = 2.31, 2.27, 2.16, 2.09 eV) decreases with increase in molar concentration (0.05, 0.10, 0.15 and 0.20 M). Band gap decreases with increasing particle size.

In the present work, thin films of Tin Sulphide (SnS) with TEA are deposited on glass substrate at room temperature by successive ionic layer adsorption and reaction method for solar cell application. The structural, topographical, morphalogical and optical properties of triethanolamine doped tin sulphide thin films are analyzed by X-ray diffraction, SEM, AFM, FTIR and UV–Vis analysis. The X-ray diffraction studies confirm that the deposited SnS films are amorphous and polycrystalline structure. From the SEM micrographs, it is clear that the film possesses almost smooth surface although some particles have distributed on the film because of the increasing concentration. The AFM image indicates that these coatings cover the surface of the substrate completely. A well ordered stair case structure of the SnS thin films are spread over the surface. Various functional groups present in the developed thin film are investigated by FT-IR analysis. The band gap energy decreases with increase in molar concentration as observed by UV–Vis studies and also it shows that the band gap decreases with the increasing particle size.

The concept of interval neutrosophic sets has been studied and the introduction of a newkind of set in topological spaces called the interval valued neutrosophic support soft set has beensuggested. We study some of its basic properties. The main purpose of this paper is to give theoptimum solution to decision-making in real life problems the using interval valued neutrosophicsupport soft set.

Thin films of copper doped tin sulphide (CuxSn1−xSy) with the complexing agent TEA are deposited on glass substrates by SILAR technique for various molar concentrations (0.01–0.10 M) at room temperature. The structural, surface morphology, topography and optical properties of the films are studied for the varying molar concentrations. XRD studies reveal the amorphous nature of TEA added Cu doped SnS films. The surface morphology was observed by SEM images. Surface topography of the film is studied by AFM. 2D-AFM images reveals that the grain size, surface roughness and height decreases for the increasing concentration. FTIR analysis shows the molecular vibrations. The optical properties of the deposited films are investigated by measuring the optical absorbance of the films in a range of 300–800 nm with a UV–Vis spectrophotometer. Other properties such as transmittance, refractive index, and energy gap are calculated. Based on the above characterisations, synthesized TEA added copper doped tin sulphide thin film may be used for small band-gap semiconductors, non-linear materials and photovoltaic cell materials.