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In this work, we provide a numerical/experimental investigation of the micromechanics-induced scattered response of a polysilicon on-chip MEMS testing device, whose moving structure is constituted by a slender cantilever supporting a massive perforated plate. The geometry of the cantilever was specifically designed to emphasize the micromechanical effects, in compliance with the process constraints. To assess the effects of the variability of polysilicon morphology and of geometrical imperfections on the experimentally observed nonlinear sensor response, we adopt statistical Monte Carlo analyses resting on a coupled electromechanical finite element model of the device. For each analysis, the polysilicon morphology was digitally built through a Voronoi tessellation of the moving structure, whose geometry was in turn varied by sampling out of a uniform probability density function the value of the over-etch, considered as the main source of geometrical imperfections. The comparison between the statistics of numerical and experimental results is adopted to assess the relative significance of the uncertainties linked to variations in the micro-fabrication process, and the mechanical film properties due to the polysilicon morphology.

Magnetic thin films such as Permalloy (Py) have been extensively used as core material in integrated power magnetic components (micro-inductors and transformers) for their excellent soft magnetic properties. Existing core electrodeposition technology requires sputtered permalloy seed layer. This seed layer etches slowly compared to the electroplated core during magnetic core patterning. In this work, a new electroless deposition process has been developed where samples are activated by palladium to realize a thin catalytic layer on SiO 2 . Up to 1 μm thick permalloy (∼22% ±3% Fe and ∼78%±3% Ni) is deposited from an in-house developed borane based bath to achieve ∼ 30-35 μOhm-cm resistivities. The magnetic properties of permalloy deposits reveal distinct hysteresis loop with coercivity (∼4.5 Oe). The electroless permalloy over-etch (12 μm) compared with sputtered permalloy seed is found to be negligible (2 μm). This demonstrates the applicability of permalloy electroless deposition as a seed for high yield batch fabrication of magnetics on silicon devices.