1. Exploratory modelling and simulation of InGaN as a basis of comparison between single and double diode models of PV devices
- Author
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Ibrahim Abdulhadi Sulaiman, Munendra Singh, Mohit Sahni, Pallavi Gupta, Manisha Rajoriya, and Hussain Muhammad Hassan
- Subjects
010302 applied physics ,Work (thermodynamics) ,Maximum power principle ,Computer science ,Energy conversion efficiency ,Irradiance ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,law.invention ,law ,0103 physical sciences ,Solar cell ,Electronic engineering ,0210 nano-technology ,MATLAB ,computer ,Voltage ,computer.programming_language ,Diode - Abstract
It is a common knowledge that the efficiency of a PV solar device is very small chiefly as a result of the exhibition of non-linear characteristics of its output parameters. However, this paper presents an exploratory work on the comparison of a single diode model and double diode model based on InGaN that has better conversion efficiency than its silicon pairs. This work further illustrates how efficiency of a solar cell can be improved. MATLAB is employed as the simulation tool for modelling and analysing the two models, mathematical modelling is designed using a Simulink. The paper further explains in great details the various parameters of a PV module and under variable temperature and irradiance checks for the accurate performance of both double and single diode model using MSX60 solar module. Parameters like maximum voltage, maximum power and efficiency are used to evaluate the accuracy in order to justify better model. The results obtained portray that the models have the ability to extract PV parameters efficiently. It was also observed that both two models performed well at different conditions of temperature and irradiance, even though at higher temperature, double diode outperformed single diode. Hence, it can be concluded that double diode irrespective of computational complexity is better than single diode.
- Published
- 2022