1. Gold-vapor-assisted chemical vapor deposition of aligned monolayer WSe2 with large domain size and fast growth rate
- Author
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Matthew Mecklenburg, Chi Xu, Dingzhou Cui, Sai Praneetha Mutyala, Yihang Liu, Zhen Li, Mingrui Chen, Yu-Han Chung, Qingzhou Liu, Chongwu Zhou, Anyi Zhang, Xiao Nie, and Fanqi Wu
- Subjects
Materials science ,business.industry ,Fast Growth Rate ,02 engineering and technology ,Chemical vapor deposition ,010402 general chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Atomic and Molecular Physics, and Optics ,0104 chemical sciences ,Catalysis ,Transition metal ,Catalytic metal ,Monolayer ,Sapphire ,Optoelectronics ,General Materials Science ,Field-effect transistor ,Electrical and Electronic Engineering ,0210 nano-technology ,business - Abstract
Orientation-controlled growth of two-dimensional (2D) transition metal dichalcogenides (TMDCs) may enable many new electronic and optical applications. However, previous studies reporting aligned growth of WSe2 usually yielded very small domain sizes. Herein, we introduced gold vapor into the chemical vapor deposition (CVD) process as a catalyst to assist the growth of WSe2 and successfully achieved highly aligned monolayer WSe2 triangular flakes grown on c-plane sapphire with large domain sizes (130 µm) and fast growth rate (4.3 µm·s−1). When the aligned WSe2 domains merged together, a continuous monolayer WSe2 was formed with good uniformity. After transferring to Si/SiO2 substrates, field effect transistors were fabricated on the continuous monolayer WSe2, and an average mobility of 12 cm2·V−1·s−1 was achieved, demonstrating the good quality of the material. This report paves the way to study the effect of catalytic metal vapor in the CVD process of TMDCs and contributes a novel approach to realize the growth of aligned TMDC flakes.
- Published
- 2020
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