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Presently, porous materials have become essential to many technological applications. In this account, 3-dimensional skeleton composite materials consisting of a core-shell amorphous porous carbon/multilayer graphene are synthesized by chemical vapor deposition on Ni foam using a facile one-step growth method. The data suggest that these composites have not only outstanding electrical and mechanical properties of the multilayer graphene but also the mesoporous characteristics of the amorphous carbon. Moreover, the composited carbon materials perfectly inherit the macroporous structure of Ni foam, and the amorphous carbon core in the skeleton serves as a cushion to buffer the volume variation after the removal of Ni. The carbon composites reveal ultralow density (4.45 mg cm-3) and high conductivity (45 S cm-1), essentially issued from the perfectly preserved structural integrity of graphene. The novel carbon composites can be used as anodes for lithium ion batteries. After these carbon composites are incorporated with NaBiO3, superior electrochemical activities above 2 V can be achieved with a discharge capacity of ∼300 mAh g-1.

Topological insulator (TI) based heterostructure is a prospective candidate for ultrahigh spin-to-charge conversion efficiency due to its unique surface states. We investigate the spin-to-charge conversion in (Bi,Sb)2Te3 (BST)/CoFeB, BST/Ru/CoFeB, and BST/Ti/CoFeB by spin pumping measurement. We find that the inverse Edelstein effect length (λIEE) increases by 60% with a Ru insertion while remains constant with a Ti insertion. This can be potentially explained by the protection of BST surface states due to the high electronegativity of Ru. Such enhancement is independent of the insertion layer thickness once the thickness of Ru is larger than 0.5 nm, and this result suggests that λIEE is very sensitive to the TI interface. In addition, an effectively perpendicular magnetic anisotropy field and additional magnetic damping are observed in the BST/CoFeB sample, which comes from the interfacial spin–orbit coupling between the BST and the CoFeB. Our work provides a method to enhance λIEE and is useful for the understanding of charge-to-spin conversion in TI-based systems.

The metal-free synthesis of graphene on single-crystal silicon substrates, the most common commercial semiconductor, is of paramount significance for many technological applications. In this work, we report the growth of graphene directly on an upside-down placed, single-crystal silicon substrate using metal-free, ambient-pressure chemical vapor deposition. By controlling the growth temperature, in-plane propagation, edge-propagation, and core-propagation, the process of graphene growth on silicon can be identified. This process produces atomically flat monolayer or bilayer graphene domains, concave bilayer graphene domains, and bulging few-layer graphene domains. This work would be a significant step toward the synthesis of large-area and layer-controlled, high-quality graphene on single-crystal silicon substrates. Electronic supplementary material The online version of this article (10.1007/s40820-017-0173-1) contains supplementary material, which is available to authorized users.