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The development of natural polymer-based hydrogels, combining outstanding injectability, self-healing, and tissue adhesion, with mechanical performance, able to facilitate full-thickness skin wound healing, remains challenging. We have developed an injectable micellar hydrogel (AF127/HA-ADH/OHA-Dop) with outstanding adhesive and self-healing properties able to accelerate full-thickness skin wound healing. Dopamine-functionalized oxidized hyaluronic acid (OHA-Dop), adipic acid dihydrazide-modified HA (HA-ADH), and aldehyde-terminated Pluronic F127 (AF127) were employed as polymer backbones. They were cross-linked in situ using Schiff base dynamic covalent bonds (AF127 micelle/HA-ADH network and HA-ADH/OHA-Dop network), hydrogen bonding, and π-π stacking interactions. The resulting multicross-linked double-network design forms a micellar hydrogel. The unique multicross-linked double-network structure endows the hydrogel with both improved injection abilities and mechanical performance while self-healing faster than single-network hydrogels. Inspired by mussel foot adhesive protein, OHA-Dop mimics the catechol groups seen in mussel proteins, endowing hydrogels with robust adhesion properties. We also demonstrate the potential of our hydrogels to accelerate full-thickness cutaneous wound closure and improve skin regeneration with reduced scarring. We anticipate that our hydrogel platform based on a novel multicross-linked double-network design will transform the future development of multifunctional wound dressings.

In recent years, deep convolutional neural networks (CNNs) have been widely applied to handle low-level vision problems. However, most existing CNN-based approaches can either handle single degeneration each time or treat them jointly through feature entangling, thus likely leading to poor performance when the actual degradation is inconsistent with hypothetical degradation condition. Furthermore, feature coupling will bring a large amount of computation, which may make the methods impractical to real-time mobile scenarios. In order to address these problems, we propose a deep decoupled cooperative learning model which can not only develop the corresponding recover network to deal with each degradation, but also flexibly handle multiple degradations at the same time. Thus, our approach can achieve disentangling and synthesizing single image super-resolution and motion deblurring, which has high practicability. We evaluate the proposed approach on various benchmark datasets, covering both natural images and synthetic images. The results demonstrate its superiority, compared to the state-of-the-art, where image SR and motion deblurring can be accomplished effectively concurrently. The source code of the work is available at https://github.com/hengliusky/Cooperative-Learning-Deblur-SR .

Summary This paper reports a new method to generate stable and high-brightness electroluminescence (EL) by subsequently growing large/small grains at micro/nano scales with the configuration of attaching small grains on the surfaces of large grains in perovskite (MAPbBr3) films by mixing two precursor solutions (PbBr2 + MABr and Pb(Ac)2·3H2O + MABr). Consequently, the small and large grains serve, respectively, as passivation agents and light-emitting centers, enabling self-passivation on the defects located on the surfaces of light-emitting large grains. Furthermore, the light-emitting states become linearly polarized with maximal polarization of 30.8%, demonstrating a very stable light emission (49,119 cd/m2 with EQE = 11.31%) and a lower turn-on bias (1.9 V) than the bandgap (2.25V) in the perovskite LEDs (ITO/PEDOT:PSS/MAPbBr3/TPBi[50 nm]/LiF[0.7 nm]/Ag). Therefore, mixing large/small grains with the configuration of attaching small grains on the surfaces of large grains by mixing two precursor solutions presents a new strategy to develop high-performance perovskite LEDs., Graphical Abstract, Highlights • Small grains are attached to the surfaces of large grains in perovskite films • Ions can passivate grain boundary defects to enable self-passivation in PeLEDs • Light-emitting states become linearly polarized upon self-passivation • Turn-on voltage is lower than bandgap in perovskite LEDs under self-passivation, Materials Characterization; Optical Materials; Surface

Intrinsic degradation in 100 nm AlQ3 OLED device with strong luminescence was observed while nearly no degradation in 50 nm AlQ3 device with weak luminescence was observed for the same operation time. Based on the EL and PL measurements, it was suggested that penetration of AlQ3 molecules into NPB layer resulted in the increase of electron leakage current, and thus significant loss of current efficiency. A plausible Coulomb effect induced intrinsic degradation mechanism was therefore proposed to explain the experimental results.

Metal halide perovskites have shown rapid development in various fields such as photovoltaics, photodetectors, light-emitting diodes (LEDs), and optically pumped lasers owing to their superior optoelectronic properties. Here, we review the basic optoelectronic properties of halide perovskites from a photophysical perspective. We highlight that halide perovskites are promising in various optoelectronic devices functioning at a wide range of carrier densities. We discuss optically and electrically generated carrier density under two different excitation modes [continuous wave (CW) and pulsed] as well as the impact of carrier density on the optoelectronic behavior of perovskites. Moreover, we discuss lasing actions at high carrier densities and summarize key rules to evaluate the lasing actions. Last, we provide an outlook on perovskite-based electrically pumped lasers. Funding Agencies|ERC Starting GrantEuropean Research Council (ERC) [717026]; Swedish Energy Agency EnergimyndighetenSwedish Energy Agency [48758-1, 44651-1]; Swedish Foundation for International Cooperation in Research and Higher Education [CH2018-7736]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009-00971]

Bandgap tuning through mixing halide anions is one of the most attractive features for metal halide perovskites. However, mixed halide perovskites usually suffer from phase segregation under electrical biases. Herein, we obtain high-performance and color-stable blue perovskite LEDs (PeLEDs) based on mixed bromide/ chloride three-dimensional (3D) structures. We demonstrate that the color instability of CsPb(Br1-xClx)(3) PeLEDs results from surface defects at perovskite grain boundaries. By effective defect passivation, we achieve color-stable blue electroluminescence from CsPb(Br1-xClx)(3) PeLEDs, with maximum external quantum efficiencies of up to 4.5% and high luminance of up to 5351 cd m(-2) in the sky-blue region (489 nm). Our work provides new insights into the color instability issue of mixed halide perovskites and can spur new development of high-performance and color-stable blue PeLEDs. Funding Agencies|ERC Starting GrantEuropean Research Council (ERC) [717026]; Swedish Energy Agency EnergimyndighetenSwedish Energy Agency [48758-1, 44651-1]; Swedish Foundation for International Cooperation in Research and Higher Education [CH2018-7736]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [200900971]; China Scholarship CouncilChina Scholarship Council

Understanding the feasibility to couple semiconducting and magnetic properties in metal halide perovskites through interface design opens new opportunities for creating the next generation spin‐related optoelectronics. In this work, a fundamentally new phenomenon of optically induced magnetization achieved by coupling photoexcited orbital magnetic dipoles with magnetic spins at perovskite/ferromagnetic interface is discovered. The depth‐sensitive polarized neutron reflectometry combined with in situ photoexcitation setup, constitutes key evidence of this novel effect. It is demonstrated that a circularly polarized photoexcitation induces a stable magnetization signal within the depth up to 7.5 nm into the surface of high‐quality perovskite (MAPbBr3) film underneath a ferromagnetic cobalt layer at room temperature. In contrast, a linearly polarized light does not induce any detectable magnetization in the MAPbBr3. The observation reveals that photoexcited orbital magnetic dipoles at the surface of perovskite are coupled with the spins of the ferromagnetic atoms at the interface, leading to an optically induced magnetization within the perovskite’s surface. The finding demonstrates that perovskite semiconductor can be bridged with magnetism through optically controllable method at room temperature in this heterojunction design. This provides the new concept of utilizing spin and orbital degrees of freedom in new‐generation spin‐related optoelectronic devices., The depth‐sensitive polarized neutron reflectometry technique reveals the optically induced static magnetization in metal halide perovskite by coupling photoexcited orbital magnetic dipoles with spins at perovskite/ferromagnetic interface. This work demonstrates that perovskite can be bridged with magnetism through optically controllable method in perovskite/ferromagnetic heterojunction, providing the new concept of utilizing spin and orbital degrees of freedom for spin‐related optoelectronics.

Doping has been used as a common method to improve photovoltaic performance in perovskite solar cells (PSCs). This paper reports a new phenomenon that the SnF2 doping can largely increase the exciton-exciton interaction through orbital magnetic dipoles toward increasing dissociation probabilities in lead-free FASnI2Br PSCs. Essentially, when orbit-orbit interaction between excitons occurs, linearly and circularly polarized photoexcitations can inevitably generate different photocurrents, giving rise to a ΔJsc phenomenon. Here, it is found that, when SnF2 doping is used to boost photovoltaic efficiency to 7.61%, the orbit-orbit interaction is increased by a factor of 2.2, shown as the ΔJsc changed from 1.21% to 0.55%. Simultaneously, magnetic field effects of Jsc indicate that increasing orbit-orbit interaction leads to an increase on the spin-orbital coupling in Sn perovskites (FASnI2Br) upon SnF2 doping. This presents a new doping effect occurring in the Sn perovskite solar cell toward enhancing photovoltaic efficiency.

Recent studies have shown that introductions of some organic additives are beneficial for optimizing organic–inorganic hybrid perovskite (OIHP) optoelectronic properties to promote their industrial...

The forming/destruction mechanism of conducting filament is essential in understanding the behavior of resistance-memory device. On the basis of filamentary theory, we systematically studied the different electrical performances of both planar and vertical sandwich (metal/organic/metal) memory devices. Bias induced morphological change in gap devices are monitored using scanning electron microscopy system equipped with probes. The in situ images directly demonstrate that with bias increasing, metal clusters emerge inside the channel and further cause sudden switching of device resistance. After clarifying the roles of electrodes and sandwiched organic layer, we conclude a field-dependent filament formation and organics-assistant filament destruction mechanism for resistance memory phenomenon, which should generally exist in all organic electronic devices with metal electrodes.

The vertically ordered (small-to-large n) quasi-2D perovskite films serve as common approaches to facilitate directional charge transfer. Here, we report a different strategy of uniformly arranging different-n-value nanoplates (PEA(2)MA(n-1)Pb(n)I(3n+1)) by introducing vacuum poling treatment to enforce nucleation during crystallization. This uniform distribution is verified by delicate mechanical tape-peeling method while monitoring optical absorption, photoluminescence (PL), and energy-dispersive X-ray spectroscopy (EDS). With uniform distribution, efficient carrier transfer within 10 ps is revealed by transient absorption. Moreover, record-high fill factor (FF) of 82.4% with power conversion efficiency (PCE) of 18.04% (Voc = 1.223 V, Jsc = 17.91 mA/cm(2)) was demonstrated. Superior stability is achieved with retaining 96.1% of initial efficiency after 8-month storage and maintaining 97 7% at 80'C for over 180 h. This uniformly arranging different-n-value nanoplates offers a new material engineering strategy to enhance carrier transfer and extraction for developing high-efficiency and stable quasi-2D perovskite solar cells.

Optoelectronic behavior in materials such as organic/inorganic hybrid perovskites depend on a complex interplay between fast (electronic) and slower (ionic) processes. These processes are thought to be influenced by structural inhomogeneities (e.g. interfaces and grain boundaries) bringing forward the necessity for development of techniques capable of correlating nanostructure and photo-transport behavior. While Kelvin probe force microscopy (KPFM) is ideally suited to map surface potentials on relevant length scales, it lacks sufficient temporal resolution to extract the meaningful system dynamics. Here, we develop a time resolved surface photovoltage (SPV) measurement based on full information capture of the photodetector stream during open loop KPFM operation. G-Mode, or G-KPFM allows quantification of SPV with microsecond temporal and nanoscale spatial resolution. Using this technique, we observe concurrent spatial and fast temporal variations in the SPV generated across a methylammonium lead bromide (MAPbBr3) thin film, a possible indicator relating microstructure with heterogenous photo-transport behavior. We further demonstrate the advantage of adopting big data analytics including unsupervised clustering methods to quickly discern spatial variability in the information rich SPV dataset. Beyond G-KPFM, such clustering methods will be useful for interpretation of the multidimensional datasets arising from the growing number of time resolved KPFM approaches now available.

Two peaks are observed in the capacitance–voltage (C–V) characteristics of electron-transport fullerene (C60 or C70)/Bphen based devices. The experimental results suggest that the mobile carriers generated from unintentional doping and trapped carriers are the origins of these two peaks, just the same as those of hole-transport devices. In addition, the polarity of one C–V peak voltage (the voltage corresponding to the peak capacitance) reverses as the Bphen layer thickness increases. The transient photo-voltage (TPV) signals show a polarity reversal of the internal electric field, confirming the related phenomenon.

Polarization effects on optoelectronic behaviors in perovskite-based devices are difficult to address due to quick electronic polarization relaxation and ionic polarization from mobile ions. Here we show the effects of polarized excited states on photoluminescence and photocurrent in MAPbBr3 thin-film devices. We found optically polarized transition dipoles, oriented paralleled and perpendicular to device built-in field, give rise to significantly different photoluminescence and photocurrent outcomes. It provides a new understanding that controlling domain geometry can further enhance the light-emitting and photovoltaic performance of perovskite-based applications. The observation proves that the anisotropy of photoexcited transition dipoles is existed in the electronic states of MAPbBr3. Particularly, this indicates that photo-induced electronic polarization can be shown as photoinduced dielectric polarization at the dipolar polarization regime, which impacts device performance. We also observed that increasing photoexcitation intensity leads to a decreases on both field-induced photoluminescence quenching and field-induced photocurrent enhancing, which implies a cooperative interaction between transition dipoles of increased density that favors light emission but infavors charge dissociation. This provides a critical understanding on why organic-inorganic hybrid perovskites can function as efficient photovoltaic and light-emitting materials at low and high excitation intensities, respectively. Our estimation shows that, by manipulating the ratio of dipole orientation, the efficiencies of perovskite-based LEDs and solar cells could be improved by 50% and 18%, respectively. Clearly, the polarization effect presents a new insight on further controlling photovoltaic and light-emitting actions by manipulating the polarization of excited states in perovskite optoelectronics.

This paper reports an amplified spontaneous emission (ASE) initiated by intrinsically passivating grain boundary defects and aligning transition dipoles in polycrystalline perovskite (MAPbBr3) films. The method is developed by using concurrently occurring fast and slow growths to attach small grains on surfaces of large grains toward low-threshold ASE. This materials processing utilizes one-step solution method of mixing two MAPbBr3 precursor (PbBr2-based and Pb(Ac)2 · 3H2O-based) solutions to control two subsequent growths: quickly growing large grains followed by slowly growing small grains, leading to unique emitting centers from large grains and self-doping agents from small grains. With this design, spectral narrowing phenomenon is observed from the large grains with the full width at half maximum decreasing from 21 to 4 nm when the pumping fluence is increased from 2 to 10 µW, generating an efficient ASE. Concurrently, the observed ASE shows a linear polarization reaching 21.1%, indicating that the transition dipoles in large grains are linearly polarized with coherent interaction. Therefore, this processing strategy presents a unique method to intrinsically passivate grain boundary defects and align transition dipoles toward developing ASE by attaching small grains (serving as passivation agent) to the surfaces of large grains (functioning as light-emitting centers).

Lead halide perovskites have demonstrated outstanding achievements in photoelectric applications owing to their unique properties. However, the moisture sensitivity of lead halide perovskite has ra ...

High precision and large dynamic range measurement are required in the readout systems for the Water Cherenkov Detector Array (WCDA) in the Large High Altitude Air Shower Observatory (LHAASO). This paper presents a prototype of a 12-bit 40 MSPS Analog-to-Digital Converter (ADC) Application Specific Integrated Circuit (ASIC) designed for the readout of the LHAASO WCDA. Combining this ADC and the front-end ASIC finished in our previous work, high precision charge measurement can be achieved based on the digital peak detection method. This ADC is implemented based on a power-efficient Successive Approximation Register (SAR) architecture, which incorporates key parts such as a Capacitive Digital-to-Analog Converter (CDAC), dynamic comparator and asynchronous SAR control logic. The simulation results indicate that the Effective Number Of Bits (ENOB) with a sampling rate of 40 MSPS is better than 10 bits in an input frequency range below 20 MHz, while its core power consumption is 6.6 mW per channel. The above results are good enough for the readout requirements of the WCDA.

Organic photovoltaics (OPVs) with three types of double anode buffer layers (DABLs), i.e., 4.5 nm hole-transport material 4,4-bis[N-(1-naphthyl)-N-phenyl-amino]biphenyl layer, 1 nm electron-transport material Bphen, and 1 nm typical insulator LiF layer, respectively, deposited onto 10 nm MoO3 layer, were fabricated. All these three DABLs can improve the efficiency of CuPc/C60 based planar heterojunction OPV, especially with about 10% enhancement of short-circuit current (ISC). Based on the external quantum efficiency (EQE) and transient photovoltage (TPV) measurements, a mechanism of depressing harmful exciton dissociation at the MoO3/CuPc interface has been proposed. This harmful dissociation results in exciton loss within the CuPc layer, while a proper ultrathin layer inserted at MoO3/CuPc interface can effectively depress the dissociation and thus improve the total photocurrent.

In organic resistive memory device field, alternating current (AC) has seldom been studied systematically. In the present work, square wave voltage pulses are considered to obtain memory switching to the ON state with voltage amplitude lower than the threshold voltage of the device, even with less time. The ON states induced by such AC depend on both frequency and amplitude. A possible mechanism related to filamentary formation was proposed to explain the AC induced effect.

To identify the effect of drift/diffusion current on the fill factor (FF) of organic solar cells, the correlation between FF and drift/diffusion current is studied with thickness/type of donor material, temperature and doping as the experimental parameters. Experimental results show that FF is positively related to the diffusion current. Because of the suppression of carrier diffusion, generated carriers will accumulate at the donor–acceptor interface, resulting in carrier recombination.

Despite quick development of perovskite light-emitting diodes (PeLEDs) during the past few years, the fundamental mechanisms on how ion migration affects device efficiency and stability remain unclear. Here, it is demonstrated that the dynamic redistribution of mobile ions in the emissive layer plays a key role in the performance of PeLEDs and can explain a range of abnormal behaviours commonly observed during the device measurement. The dynamic redistribution of mobile ions changes charge-carrier injection and leads to increased recombination current; at the same time, the ion redistribution also changes charge transport and results in decreased shunt resistance current. As a result, the PeLEDs show hysteresis in external quantum efficiencies (EQEs) and radiance, that is, higher EQEs and radiance during the reverse voltage scan than during the forward scan. In addition, the changes on charge injection and transport induced by the ion redistribution also well explain the rise of the EQE/radiance values under constant driving voltages. The argument is further rationalized by adding extra formamidinium iodide (FAI) into optimized PeLEDs based on FAPbI(3), resulting in more significant hysteresis and shorter operational stability of the PeLEDs. Funding Agencies|ERC Starting GrantEuropean Research Council (ERC) [717026]; Swedish Energy Agency EnergimyndighetenSwedish Energy Agency [48758-1, 44651-1]; Swedish Foundation for International Cooperation in Research and Higher Education [CH2018-7736]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009-00971]; NSFCNational Natural Science Foundation of China (NSFC) [61774077]; Research and Development Program in Key Areas of Guangdong Province [2019B1515120073, 2019B090921002, 2019B010132004]; China Scholarship CouncilChina Scholarship Council

Orientational manipulation of transition dipole moment (TDM) plays an important role in controlling the polarization of excited states in light emission as well as lasing actions. The present work discovers vertically aligned TDMs in hybrid perovskite films through angle-resolved photoluminescence (PL) measurements, which show enhanced emission through the film edge. With increasing excitation intensity, the edge emission induced by these vertically aligned TDMs becomes dominant and eventually leads to amplified spontaneous emission (ASE) through the edge view. Meanwhile, polarized emission of both PL and electroluminescence (EL) provides further evidence for vertically aligned TDMs. Surprisingly, the degree of polarization (DOP) through the film edge is increased when grain boundary defects are passivated through either stochiometric engineering or self-passivation by mobile ions under working conditions. With increasing DOP, ASE threshold of the perovskite film is reduced owing to enhanced collective behaviors of light-emitting states. This work presents a useful method to manipulate TDMs in organic-inorganic hybrid perovskites. Funding Agencies|ERC Starting GrantEuropean Research Council (ERC) [717026]; Swedish Energy Agency EnergimyndighetenSwedish Energy Agency [48758-1]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009-00971]