12 results on '"Hongjun Niu"'
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2. One site, two cations, three environments: s2 and s0 electronic configurations generate Pb-free relaxor behaviour in a perovskite oxide
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Marco Zanella, William J. Thomas, Jonathan Alaria, Luke M. Daniels, Jacinthe Gamon, Thomas A. Whittle, Philippa M. Shepley, Matthew J. Rosseinsky, Anton Goetzee-Barral, Quinn Gibson, T. Wesley Surta, Matthew A. Wright, Yang Li, John B. Claridge, Andrew J. Bell, Hongjun Niu, Department of Chemistry University of Liverpool, University of Liverpool, School of Physics and Astronomy [Leeds], University of Leeds, School of Chemical and Process Engineering, Department of Physics - University of Liverpool, and We thank the EPSRC (EP/R011753 and EP/R010293) for funding this research. J.G. and Q.D.G. acknowledge support through EP/N004884. We thank the STFC for access to Polaris (Xpress proposal 1890309) and Dr. Ron Smith for collecting the data and performing absorption corrections. We thank Argonne National Laboratory for access to the 11BM beamline (Rapid Access proposal 65125) and to Dr. Saul Lapidus and Dr. Lynn Ribaud for collecting the data more...
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010302 applied physics ,Phase boundary ,Oxide ,02 engineering and technology ,General Chemistry ,[CHIM.MATE]Chemical Sciences/Material chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,Biochemistry ,Piezoelectricity ,Ferroelectricity ,Catalysis ,Article ,chemistry.chemical_compound ,Colloid and Surface Chemistry ,chemistry ,Chemical physics ,Local symmetry ,0103 physical sciences ,Electron configuration ,0210 nano-technology ,Solid solution ,Perovskite (structure) - Abstract
The piezoelectric devices widespread in society use noncentrosymmetric Pb-based oxides because of their outstanding functional properties. The highest figures of merit reported are for perovskites based on the parent Pb(Mg1/3Nb2/3)O3 (PMN), which is a relaxor: a centrosymmetric material with local symmetry breaking that enables functional properties, which resemble those of a noncentrosymmetric material. We present the Pb-free relaxor (K1/2Bi1/2)(Mg1/3Nb2/3)O3 (KBMN), where the thermal and (di)electric behavior emerges from the discrete structural roles of the s0 K+ and s2 Bi3+ cations occupying the same A site in the perovskite structure, as revealed by diffraction methods. This opens a distinctive route to Pb-free piezoelectrics based on relaxor parents, which we demonstrate in a solid solution of KBMN with the Pb-free ferroelectric (K1/2Bi1/2)TiO3, where the structure and function evolve together, revealing a morphotropic phase boundary, as seen in PMN-derived systems. The detailed multiple-length-scale understanding of the functional behavior of KBMN suggests that precise chemical manipulation of the more diverse local displacements in the Pb-free relaxor will enhance performance. more...
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- 2021
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Catalog
3. A CO2 -Tolerant Perovskite Oxide with High Oxide Ion and Electronic Conductivity
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Marco Zanella, Luke M. Daniels, John A. Kilner, John Druce, Wen Xu, J. Felix Shin, Helena Téllez, Ming Li, Dingyue Hu, Tatsumi Ishihara, Michael J. Pitcher, Leanne A. H. Jones, Hongjun Niu, John B. Claridge, Hripsime Gasparyan, Matthew J. Rosseinsky, Vin Dhanak, and Engineering & Physical Science Research Council (EPSRC) more...
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Technology ,Chemistry, Multidisciplinary ,Diffusion ,02 engineering and technology ,Conductivity ,FUEL-CELLS ,7. Clean energy ,01 natural sciences ,Oxygen ,09 Engineering ,chemistry.chemical_compound ,General Materials Science ,02 Physical Sciences ,Chemistry, Physical ,Physics ,oxygen separation membranes ,ELECTRICAL-PROPERTIES ,021001 nanoscience & nanotechnology ,DIFFUSION ,Chemistry ,Membrane ,Physics, Condensed Matter ,Mechanics of Materials ,Physical Sciences ,Science & Technology - Other Topics ,mixed ionic-electronic conductors ,CO2 ,03 Chemical Sciences ,0210 nano-technology ,Materials science ,OXYGEN-EXCHANGE KINETICS ,Materials Science ,perovskites ,Oxide ,surface segregation ,chemistry.chemical_element ,Materials Science, Multidisciplinary ,010402 general chemistry ,Physics, Applied ,Reactivity (chemistry) ,Nanoscience & Nanotechnology ,Electrical conductor ,Perovskite (structure) ,PERMEATION BEHAVIOR ,Science & Technology ,solid oxide fuel cells ,COMPOSITE ,STABILITY ,Mechanical Engineering ,0104 chemical sciences ,SURFACE TERMINATION ,Chemical engineering ,chemistry ,HIGH-PERFORMANCE CATHODE - Abstract
Mixed ionic-electronic conductors (MIECs) that display high oxide ion conductivity (σo ) and electronic conductivity (σe ) constitute an important family of electrocatalysts for a variety of applications including fuel cells and oxygen separation membranes. Often MIECs exhibit sufficient σe but inadequate σo . It has been a long-standing challenge to develop MIECs with both high σo and stability under device operation conditions. For example, the well-known perovskite oxide Ba0.5 Sr0.5 Co0.8 Fe0.2 O3- δ (BSCF) exhibits exceptional σo and electrocatalytic activity. The reactivity of BSCF with CO2 , however, limits its use in practical applications. Here, the perovskite oxide Bi0.15 Sr0.85 Co0.8 Fe0.2 O3- δ (BiSCF) is shown to exhibit not only exceptional bulk transport properties, with a σo among the highest for known MIECs, but also high CO2 tolerance. When used as an oxygen separation membrane, BiSCF displays high oxygen permeability comparable to that of BSCF and much higher stability under CO2 . The combination of high oxide transport properties and CO2 tolerance in a single-phase MIEC gives BiSCF a significant advantage over existing MIECs for practical applications. more...
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- 2020
4. Substitution of Re7+ into CaMnO3: an efficient free electron generation dopant for tuning of thermoelectric properties
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Hongjun Niu, Jonathan Alaria, J. Felix Shin, John B. Claridge, and Matthew J. Rosseinsky
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Materials science ,Dopant ,Doping ,Analytical chemistry ,General Physics and Astronomy ,02 engineering and technology ,010402 general chemistry ,021001 nanoscience & nanotechnology ,Thermal conduction ,Polaron ,01 natural sciences ,Variable-range hopping ,0104 chemical sciences ,Electrical resistivity and conductivity ,Seebeck coefficient ,Thermoelectric effect ,Physical and Theoretical Chemistry ,0210 nano-technology - Abstract
Highly dense CaMn1-xRexO3 (0 ≤ x ≤ 0.04) samples were prepared by solid-state synthesis. The effect of Re doping was assessed by the characterisation of crystal structure, oxygen content, and electrical and thermal transport properties. The oxidation state of the substituted Re was determined by X-ray absorption near edge spectra to be Re7+, and led to expansion of the lattice and an increase in electron carrier concentration due to the formation of Mn3+. The thermal behaviour of the electrical conductivity and the thermopower over a wide temperature range allowed identification of different conduction mechanisms: (1) below 110 K, 3D variable range hopping, (2) between 110 and 650 K, small polaron transport, and (3) above 650 K, activation of carriers over a mobility edge. Evaluation of the power factor expected for different dopant oxidation states as a function of dopant concentration shows that the doping strategy using a heavy heptavalent ion allows accessibility of the peak power factor at lower dopant concentrations, lowering the amount of non-ionised impurities, and therefore improves the electronic substitution efficiency, the ratio of activated carriers over the nominal doping concentration, compared to previously studied dopants. An increased power factor and a reduced lattice thermal conductivity are obtained with a peak figure of merit ZT = 0.16(3) at 947 K for CaMn0.98Re0.02O3. This is an approximately two-fold increase compared to undoped CaMnO3, and is comparable to the highest values reported for highly dense B-site doped CaMnO3. more...
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- 2017
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5. Computational Prediction and Experimental Realization of p-Type Carriers in the Wide-Band-Gap Oxide SrZn1-xLixO2
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Stanislav N. Savvin, Matthew J. Rosseinsky, Troy D. Manning, Christos A. Tzitzeklis, Michael J. Pitcher, Matthew S. Dyer, George R. Darling, Jyoti K. Gupta, Jonathan Alaria, Hongjun Niu, and John B. Claridge more...
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Dopant ,Band gap ,Doping ,Analytical chemistry ,Oxide ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Inorganic Chemistry ,chemistry.chemical_compound ,chemistry ,Ternary compound ,visual_art ,Seebeck coefficient ,0103 physical sciences ,visual_art.visual_art_medium ,Ceramic ,Physical and Theoretical Chemistry ,Inductively coupled plasma ,010306 general physics ,0210 nano-technology - Abstract
It is challenging to achieve p-type doping of zinc oxides (ZnO), which are of interest as transparent conductors in optoelectronics. A ZnO-related ternary compound, SrZnO2, was investigated as a potential host for p-type conductivity. First-principles investigations were used to select from a range of candidate dopants the substitution of Li+ for Zn2+ as a stable, potentially p-type, doping mechanism in SrZnO2. Subsequently, single-phase bulk samples of a new p-type-doped oxide, SrZn1–xLixO2 (0 < x < 0.06), were prepared. The structural, compositional, and physical properties of both the parent SrZnO2 and SrZn1–xLixO2 were experimentally verified. The band gap of SrZnO2 was calculated using HSE06 at 3.80 eV and experimentally measured at 4.27 eV, which confirmed the optical transparency of the material. Powder X-ray diffraction and inductively coupled plasma analysis were combined to show that single-phase ceramic samples can be accessed in the compositional range x < 0.06. A positive Seebeck coefficient ... more...
- Published
- 2018
6. Room Temperature Magnetically Ordered Polar Corundum GaFeO3 Displaying Magnetoelectric Coupling
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Hongjun Niu, Michael J. Pitcher, Dmitry Batuk, Sanliang Ling, Matthew J. Rosseinsky, Pranab K. Mandal, Claire A. Murray, Sarah J. Day, Artem M. Abakumov, Marco Zanella, Craig L. Bull, Ronald I. Smith, Furio Corà, Plamen Stamenov, John B. Claridge, Karl Dawson, Alex J. Corkett, and Ben Slater more...
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Neutron diffraction ,Configuration entropy ,Point reflection ,Mineralogy ,Corundum ,02 engineering and technology ,engineering.material ,010402 general chemistry ,01 natural sciences ,Biochemistry ,Catalysis ,Condensed Matter::Materials Science ,Colloid and Surface Chemistry ,Multiferroics ,Isostructural ,Chemistry ,Physics ,General Chemistry ,021001 nanoscience & nanotechnology ,0104 chemical sciences ,Electron diffraction ,Chemical physics ,engineering ,Polar ,0210 nano-technology - Abstract
The polar corundum structure type offers a route to new room temperature multiferroic materials, as the partial LiNbO3-type cation ordering that breaks inversion symmetry may be combined with long-range magnetic ordering of high spin d5 cations above room temperature in the AFeO3 system. We report the synthesis of a polar corundum GaFeO3 by a high-pressure, high-temperature route and demonstrate that its polarity arises from partial LiNbO3-type cation ordering by complementary use of neutron, X-ray, and electron diffraction methods. In situ neutron diffraction shows that the polar corundum forms directly from AlFeO3-type GaFeO3 under the synthesis conditions. The A3+/Fe3+ cations are shown to be more ordered in polar corundum GaFeO3 than in isostructural ScFeO3. This is explained by DFT calculations which indicate that the extent of ordering is dependent on the configurational entropy available to each system at the very different synthesis temperatures required to form their corundum structures. Polar corundum GaFeO3 exhibits weak ferromagnetism at room temperature that arises from its Fe2O3-like magnetic ordering, which persists to a temperature of 408 K. We demonstrate that the polarity and magnetization are coupled in this system with a measured linear magnetoelectric coupling coefficient of 0.057 ps/m. Such coupling is a prerequisite for potential applications of polar corundum materials in multiferroic/magnetoelectric devices. more...
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- 2017
7. A Polar Corundum Oxide Displaying Weak Ferromagnetism at Room Temperature
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Michael F. Thomas, Zhongling Xu, Matthew J. Rosseinsky, Furio Corà, Florian Schiffmann, Gustaaf Van Tendeloo, Hongjun Niu, Xinming Wan, Robert G. Palgrave, Artem M. Abakumov, John E. Warren, Ben Slater, Umut Adem, Man-Rong Li, S. R. C. McMitchell, Markys G. Cain, Chris I. Thomas, Duong V. Giap, Timothy L. Burnett, and John B. Claridge more...
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Oxide ,Mineralogy ,Corundum ,02 engineering and technology ,engineering.material ,010402 general chemistry ,Ferric Compounds ,01 natural sciences ,Biochemistry ,Article ,Catalysis ,Condensed Matter::Materials Science ,chemistry.chemical_compound ,Magnetization ,Colloid and Surface Chemistry ,Aluminum Oxide ,Antiferromagnetism ,Multiferroics ,Condensed matter physics ,Magnetic Phenomena ,Temperature ,Membranes, Artificial ,Oxides ,General Chemistry ,021001 nanoscience & nanotechnology ,Ferroelectricity ,0104 chemical sciences ,Chemistry ,chemistry ,Ferromagnetism ,engineering ,0210 nano-technology ,Ground state ,Scandium - Abstract
Combining long-range magnetic order with polarity in the same structure is a prerequisite for the design of (magnetoelectric) multiferroic materials. There are now several demonstrated strategies to achieve this goal, but retaining magnetic order above room temperature remains a difficult target. Iron oxides in the +3 oxidation state have high magnetic ordering temperatures due to the size of the coupled moments. Here we prepare and characterize ScFeO3 (SFO), which under pressure and in strain-stabilized thin films adopts a polar variant of the corundum structure, one of the archetypal binary oxide structures. Polar corundum ScFeO3 has a weak ferromagnetic ground state below 356 K-this is in contrast to the purely antiferromagnetic ground state adopted by the well-studied ferroelectric BiFeO3. more...
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- 2012
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8. Interstitial Oxide Ion Order and Conductivity in La1.64Ca0.36Ga3O7.32 Melilite
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John B. Claridge, Hongjun Niu, Xiaojun Kuang, Chris I. Thomas, Samantha Y. Chong, Zhongling Xu, Matthew J. Rosseinsky, and Man-Rong Li
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Oxide ,chemistry.chemical_element ,Nanotechnology ,defect structures ,02 engineering and technology ,Electrolyte ,Conductivity ,engineering.material ,010402 general chemistry ,01 natural sciences ,7. Clean energy ,Oxygen ,Catalysis ,Ion ,chemistry.chemical_compound ,calcium lanthanum gallate melilite interstitial oxide ion order cond ,QD ,Electrical conductor ,oxido ligands ,Chemistry ,Melilite ,General Medicine ,General Chemistry ,021001 nanoscience & nanotechnology ,Communications ,0104 chemical sciences ,Chemical engineering ,solid-state structures ,engineering ,Charge carrier ,ion conductivity ,0210 nano-technology - Abstract
Solid oxide fuel cells (SOFCs) are a major candidate technology for clean energy conversion because of their high efficiency and fuel flexibility.1 The development of intermediate-temperature (500–750 °C) SOFCs requires electrolytes with high oxide ion conductivity (exceeding 10−2 S cm−1 assuming an electrolyte thickness of 15 μm1). This conductivity, in turn, necessitates enhanced understanding of the mechanisms of oxide ion charge carrier creation and mobility at an atomic level. The charge carriers are most commonly oxygen vacancies in fluorites2, 3 and perovskites.3, 4 There are fewer examples of interstitial-oxygen-based conductors such as the apatites5, 6 and La2Mo2O9-based materials,7–9 so information on how these excess anion defects are accommodated and the factors controlling their mobility is important. more...
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- 2010
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9. SrHf0.67Ti0.33O3 high-k films deposited on Si by pulsed laser deposition
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Simon Romani, John Bacsa, Zhongling Xu, Paul R. Chalker, S. R. C. McMitchell, Lei Yan, C. Grygiel, Joanna H. Clark, Matthew J. Rosseinsky, Hongjun Niu, Robert G. Palgrave, Matthew R. Suchomel, University of Liverpool, Advanced Photon Source [ANL] (APS), and Argonne National Laboratory [Lemont] (ANL)-University of Chicago-US Department of Energy more...
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Permittivity ,Band gap ,02 engineering and technology ,Dielectric ,[CHIM.INOR]Chemical Sciences/Inorganic chemistry ,01 natural sciences ,Pulsed laser deposition ,[SPI.MAT]Engineering Sciences [physics]/Materials ,Optics ,X-ray photoelectron spectroscopy ,0103 physical sciences ,[PHYS.HEXP]Physics [physics]/High Energy Physics - Experiment [hep-ex] ,[CHIM.CRIS]Chemical Sciences/Cristallography ,General Materials Science ,Thin film ,[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] ,ComputingMilieux_MISCELLANEOUS ,High-κ dielectric ,010302 applied physics ,business.industry ,Chemistry ,General Chemistry ,[CHIM.MATE]Chemical Sciences/Material chemistry ,021001 nanoscience & nanotechnology ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,Optoelectronics ,[PHYS.COND.CM-SCE]Physics [physics]/Condensed Matter [cond-mat]/Strongly Correlated Electrons [cond-mat.str-el] ,0210 nano-technology ,business ,Current density - Abstract
The large band gap (3.58 eV) and dielectric properties (e r =50) of bulk SrHf0.67Ti0.33O3 (SHTO) make it a promising high-k material. SHTO films were deposited on p-type (100) Si single crystal substrates by pulsed laser deposition. The composition, structure, thickness, and roughness of the SHTO films have been studied using X-ray Photoelectron Spectroscopy, X-ray reflectivity, transmission electron microscopy, and atomic force microscopy. The capacitance–voltage and leakage current density characteristics of the films have been evaluated. For a post-annealed SHTO film with a thickness of 25 nm, the relatively high permittivity of 35 was achieved with the low leakage current density of 4.96×10−4 A/cm2 at −2 V bias voltage. more...
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- 2011
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10. A-Site Order Control in Mixed Conductor NdBaCo 2 O 5+δ Films through Manipulation of Growth Kinetics
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Hongjun Niu, Lei Yan, Paul R. Chalker, D. Giap, Zhongling Xu, S. R. C. McMitchell, Matthew J. Rosseinsky, John Bacsa, C. Grygiel, and University of Liverpool
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Reflection high-energy electron diffraction ,Materials science ,Growth kinetics ,General Chemical Engineering ,Kinetics ,Analytical chemistry ,02 engineering and technology ,[CHIM.INOR]Chemical Sciences/Inorganic chemistry ,01 natural sciences ,Pulsed laser deposition ,[SPI.MAT]Engineering Sciences [physics]/Materials ,Order control ,0103 physical sciences ,Materials Chemistry ,[PHYS.HEXP]Physics [physics]/High Energy Physics - Experiment [hep-ex] ,[CHIM.CRIS]Chemical Sciences/Cristallography ,[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] ,ComputingMilieux_MISCELLANEOUS ,010302 applied physics ,Supersaturation ,General Chemistry ,[CHIM.MATE]Chemical Sciences/Material chemistry ,021001 nanoscience & nanotechnology ,A-site ,Crystallography ,Mixed conductor ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,[PHYS.COND.CM-SCE]Physics [physics]/Condensed Matter [cond-mat]/Strongly Correlated Electrons [cond-mat.str-el] ,0210 nano-technology - Abstract
NdBaCo2O5+δ films have been grown on (001)-SrTiO3 substrates using pulsed laser deposition with RHEED to access both A-site ordered and A-site disordered films grown in a layer-by-layer manner. Ionic diffusion kinetics are shown to be key parameter for A-site order, attained by control of growth kinetics, mobility, and supersaturation. more...
- Published
- 2010
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11. Phase Stability Control of Interstitial Oxide Ion Conductivity in the La1+xSr1-xGa3O7+x/2 Melilite Family
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Z. Q. Deng, Matthew J. Rosseinsky, Hongjun Niu, John B. Claridge, Chris I. Thomas, and Xiaojun Kuang
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Quenching ,Phase transition ,Chemistry ,General Chemical Engineering ,Melilite ,02 engineering and technology ,General Chemistry ,Conductivity ,engineering.material ,010402 general chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,0104 chemical sciences ,Tetragonal crystal system ,Crystallography ,Materials Chemistry ,engineering ,Ionic conductivity ,Orthorhombic crystal system ,QD ,0210 nano-technology ,Solid solution - Abstract
The two-dimensional polyhedral anion network melilites La1+xSr1−xGa3O7+0.5x exhibit interstitial oxide ion conductivity. The solid solution is shown to extend to x = 0.64, and the variation of the conductivity with x is investigated. At high temperatures, all of these compounds adopt the typical tetragonal melilite structure. When x > 0.6, cooling below 600 °C results in a reversible phase transition to an orthorhombic structure which reduces the ionic conductivity. Quenching experiments have shown the tetragonal structure has a higher conductivity compared to the orthorhombic structure of the same composition. Short-range order effects associated with this transition exercise an important influence on the composition- and temperature-dependence of the conductivity. more...
- Published
- 2010
12. High permittivity SrHf0.5Ti0.5O3 films grown by pulsed laser deposition
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Joanna H. Clark, Lei Yan, Matthew R. Suchomel, Clara Grygiel, Matthew Werner, S. R. C. McMitchell, Paul R. Chalker, Matthew J. Rosseinsky, Hongjun Niu, John Bacsa, University of Liverpool, Advanced Photon Source [ANL] (APS), and Argonne National Laboratory [Lemont] (ANL)-University of Chicago-US Department of Energy more...
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Permittivity ,Materials science ,Physics and Astronomy (miscellaneous) ,Silicon ,Band gap ,chemistry.chemical_element ,02 engineering and technology ,Substrate (electronics) ,Dielectric ,[CHIM.INOR]Chemical Sciences/Inorganic chemistry ,01 natural sciences ,7. Clean energy ,Pulsed laser deposition ,[SPI.MAT]Engineering Sciences [physics]/Materials ,Electric field ,0103 physical sciences ,[PHYS.HEXP]Physics [physics]/High Energy Physics - Experiment [hep-ex] ,[CHIM.CRIS]Chemical Sciences/Cristallography ,[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] ,ComputingMilieux_MISCELLANEOUS ,010302 applied physics ,business.industry ,[CHIM.MATE]Chemical Sciences/Material chemistry ,021001 nanoscience & nanotechnology ,chemistry ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,Optoelectronics ,[PHYS.COND.CM-SCE]Physics [physics]/Condensed Matter [cond-mat]/Strongly Correlated Electrons [cond-mat.str-el] ,0210 nano-technology ,business ,Current density - Abstract
High permittivity SrHf0.5Ti0.5O3 films (k=62.8) have been deposited on (001) Nb–SrTiO3 single crystal conducting substrates by pulsed laser deposition. The SrHf0.5Ti0.5O3 films grow epitaxially with atomically smooth surfaces (root mean square roughness 4.8 A) and a c-axis orientation parallel to the substrate. The measured band gap of SrHf0.5Ti0.5O3 is 3.47 eV compared with 3.15 eV in SrTiO3. Under an applied electric field of 600 kV/cm, the leakage current density of the SrHf0.5Ti0.5O3 films is 4.63×10−4 A/cm2. These attractive dielectric properties and enhanced band gap values make SrHf0.5Ti0.5O3 a promising candidate for high-k dielectric applications in silicon-based integrated circuits. more...
- Published
- 2009
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