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The band gaps and structural properties of ${\mathrm{InAs}}_{1\ensuremath{-}x}{\mathrm{Sb}}_{x}$ alloys are investigated using both the modified Becke-Johnson exchange potential and hybrid functional calculations. A good agreement between the two approaches is observed for the alloys. The estimated value of $0.85\phantom{\rule{0.16em}{0ex}}\mathrm{eV}$ for the bowing parameter enables the use of $\mathrm{InAsSb}$ in long wavelength infrared (LWIR) applications. Furthermore, a lower limit of $0.29\phantom{\rule{0.16em}{0ex}}\mathrm{eV}$ for the bowing parameter is obtained for the structures yielding the largest band gaps, demonstrating the strong nonlinearity of the band gap versus the composition for this system.

Using numerical simulations, we investigate the effects of deep traps and deep acceptor levels in magnesium-doped $\mathrm{Ga}\mathrm{N}$ on interface charges in the semiconductor-oxide interface. Specifically, in this work we address two open issues observed in experimental studies on $\mathrm{Ga}\mathrm{N}$ trench metal-oxide-semiconductor field-effect transistors. (i) We investigate the observed clockwise hysteresis in the transfer characteristics and elucidate the underlying physical mechanism causing it. By employing appropriate models for substitutional carbon at nitrogen sites (${C}_{N}$) and nitrogen vacancies (${V}_{N}$), we calculate the hysteresis dependence on the trap concentrations and the measurement sweep duration ${T}_{s}$. We show that ${C}_{N}$ acceptor traps in $p$-$\mathrm{Ga}\mathrm{N}$ are likely responsible for this phenomenon and the largest hysteresis is predicted for a sweep duration of ${T}_{s}\ensuremath{\approx}30\phantom{\rule{0.2em}{0ex}}\mathrm{s}$. (ii) We also address the apparent inconsistency between the experimental and theoretically predicted magnesium-ionization levels and the variations of the measured transfer characteristics, specifically the threshold voltage. We show that the bands bending in the channel area creates a layer in which magnesium is completely ionized. As a result, the magnesium partial ionization does not have an effect and, while the threshold voltage decreases, nor does the breakdown voltage, as observed experimentally. The measured threshold voltage, which is lower than the theoretically predicted value, is caused by fixed and trapped charges at the interface, in agreement with values reported in the literature.

This work investigates carrier transport in tunnel junctions for vertical-cavity surface-emitting lasers (VCSELs). The study is performed with a quantum-corrected semiclassical approach, where tunneling is described rigorously with a nonequilibrium Green's function formalism based on a multiband description of the electronic structure. Validated with experimental results, the proposed approach provides a quantum -kinetic perspective of the tunneling process and paves the way toward a comprehensive theory of VCSELs, bridging the gap between semiclassical and quantum simulations.

We analytically calculate the anomalous transverse electric and thermal currents in massive and tilted Dirac systems, using $ \beta $-borophene as a representative material, and report on conditions under which the corresponding Lorenz number $\left(\mathcal{L}_{an}\right)$ deviates from its classically accepted value $\left(\mathcal{L}_{0}\right)$. The deviations in the high-temperature regime are shown to be an outcome of the quantitative difference in the respective kinetic transport expressions for electric $\left(\sigma\right)$ and thermal $\left(\kappa\right)$ conductivity, and are further weighted through a convolution integral with a non-linearly energy-dependent Berry curvature that naturally arises in a Dirac material. In addition, the tilt and anisotropy of the Dirac system that are amenable to change via external stimulus are found to quantitatively influence $ \mathcal{L}_{an} $. The reported deviations from $\mathcal{L}_{0} $ hold practical utility inasmuch as they allow an independent tuning of $\sigma $ and $ \kappa $, useful in optimizing the output of thermoelectric devices., Comment: 4 pages; 5 figures

High-electron-mobility transistors (HEMTs) made of wide-band-gap semiconductors have great potential for power electronics and radio-frequency applications. Coupling first-principles calculations with device simulations enables cost-effective semiconductor research and development, including materials exploration and device design. The authors report innovative, comprehensive calculations of electronic transport in wurtzite GaN and AlN and in an (Al,Ga)N/GaN HEMT. The hot-electron energy distributions in the simulated HEMTs can be used to determine the related device degradation, and suggest opportunities for improved designs.

Imaging in the extended short-wavelength infrared (eSWIR) spectral band (1.7–3.0 μm) for astronomy applications is an area of significant interest. However, these applications require infrared detectors with extremely low dark current (less than 0.01 electrons per pixel per second for certain applications). In these detectors, sources of dark current that may limit the overall system performance are fundamental and/or defect-related mechanisms. Non-optimized growth/device processing may present material point defects within the HgCdTe bandgap leading to Shockley–Read–Hall dominated dark current. While realizing contributions to the dark current from only fundamental mechanisms should be the goal for attaining optimal device performance, it may not be readily feasible with current technology and/or resources. In this regard, the U.S. Army Research Laboratory performed physics-based, two- and three-dimensional numerical modeling of HgCdTe photovoltaic infrared detectors designed for operation in the eSWIR spectral band. The underlying impetus for this capability and study originates with a desire to reach fundamental performance limits via intelligent device design.

First principles calculations are employed for the study of the band offsets of AlxGa1-xN alloys, taking into account their composition and atomic configuration. Specifically, the band offsets are obtained using PBE, PBEsol, HSE, and modified Becke-Johnson calculations, comparing the results and discussing the advantages and disadvantages of each functional. The band alignments are performed using the branch point energies of the materials as their common reference level. HSE calculations predict a valence band offset of 0.9 eV between GaN and AlN. Regarding the alloys, a conduction band edge bowing parameter of 0.55 eV and a practically zero bowing for the valence band edge is predicted on average. The different atomic configurations affect mainly the valence band edges, where deviations from linearity by more than 0.1 eV are observed.

We employ first-principles calculations in the formalism of standard and hybrid density functional theory to study the electronic and structural properties of wurtzite ${\text{Al}}_{x}{\text{Ga}}_{1\ensuremath{-}x}\text{N}$ alloys. We address the discrepancies observed in literature regarding essential electronic properties of these alloys and we investigate the dependence of these properties on the atomic ordering and composition. We show that the bowing parameter is significantly affected by the atomic ordering, ranging from zero to strong downward bowing. The effects of atomic ordering of the alloys on their band offset with respect to the pure phases are also investigated. Finally, using the effective band structure approach, we study the electronic band structure of the random alloys.

We employ first-principles density functional theory to investigate the electronic and structural properties of grain boundaries (GBs) in InAs. In particular, we study the energetics and passivation mechanisms of representative low-$\mathrm{\ensuremath{\Sigma}}$ GBs, including $\mathrm{\ensuremath{\Sigma}}3(111),\mathrm{\ensuremath{\Sigma}}3(112),\mathrm{\ensuremath{\Sigma}}5(120)$, and $\mathrm{\ensuremath{\Sigma}}5(130)$, to establish their relative stability and experimental feasibility. We find that the symmetric-tilt twin-boundary $\mathrm{\ensuremath{\Sigma}}3(111)$ GB is the most stable GB, in excellent agreement with our experimentally characterized GB structures in InAs. In addition to our theoretically predicted GB structures, we systematically study and analyze different configurations of complex multifold experimentally observed InAs GB structures. We discuss the effect of different passivations and doping mechanisms on the electronic properties of the GBs. Understanding the exact nature of the GB electronic structure and stability, as well as their passivation mechanisms is a key step for the further development of InAs based optoelectronic devices on silicon and other heterogeneous large-area substrates.

Defects in semiconductors can play a vital role in the performance of electronic devices, with native defects often dominating the electronic properties of the semiconductor. Understanding the relationship between structural defects and electronic function will be central to the design of new high-performance materials. In particular, it is necessary to quantitatively understand the energy and lifetime of electronic states associated with the defect. Here, we apply first-principles density functional theory (DFT) and many-body perturbation theory within the GW approximation to understand the nature and energy of the defect states associated with a charged nitrogen vacancy on the electronic properties of gallium nitride (GaN), as a model of a well-studied and important wide gap semiconductor grown with defects. We systematically investigate the sources of error associated with the GW approximation and the role of the underlying atomic structure on the predicted defect state energies. Additionally, analysis of the computed electronic density of states (DOS) reveals that there is one occupied defect state 0.2 eV below the valence band maximum and three unoccupied defect states at energy of 0.2--0.4 eV above the conduction band minimum, suggesting that this defect in the +1 charge state will not behave as a carrier trap. Furthermore, we compare the character and energy of the defect state obtained from GW and DFT using the HSE approximate density functional and find excellent agreement. This systematic study provides a more complete understanding of how to obtain quantitative defect energy states in bulk semiconductors.

We employ the nudged elastic band and the dimer methods within the standard density functional theory (DFT) formalism to study the migration of the oxygen and gallium vacancies in the monoclinic structure of $\ensuremath{\beta}\ensuremath{-}{\mathrm{Ga}}_{2}{\mathrm{O}}_{3}$. We identify all the first nearest neighbor paths and calculate the migration barriers for the diffusion of the oxygen and gallium vacancies. We also identify the metastable sites of the gallium vacancies which are critical for the diffusion of the gallium atoms. The migration barriers for the diffusion of the gallium vacancies are lower than the migration barriers for oxygen vacancies by 1 eV on average, suggesting that the gallium vacancies are mobile at lower temperatures. Using the calculated migration barriers we estimate the annealing temperature of these defects within the harmonic transition state theory formalism, finding excellent agreement with the observed experimental annealing temperatures. Finally, we suggest the existence of percolation paths which enable the migration of the species without utilizing all the migration paths of the crystal.

Monte Carlo (MC) methods have been shown to capture the ultrafast dynamics of carriers and resulting luminescence in photo-excited GaN. These calculations have assumed a homogeneous material under uniform illumination. We investigate the development of surrogate models to represent the carrier dynamics with fewer degrees of freedom, with the ultimate goal of computing the response of structured materials under inhomogeneous illumination profiles. These models are presently based on the extraction of mean and variance information from single data sets, through the use of fits to s piece-wise linear basis. Two models are then developed, one based on the mean and variance directly, and one on a Gaussian process regression model. New carrier populations with similar statistical profiles are then generated from these models to determine the amount of data reduction that can be obtained.

As material growth and processing have improved, state of the art infrared detector arrays remain limited by material properties and not processing or growth quality. In particular, the dark current can be dominated by diffusion of minority carriers in the quasineutral regions. In this work, we present a unique detector architecture that allows for dark current suppression below the fundamental diffusion limit. We have extensively studied this effect, and report dark current, photocurrent, and quantum efficiency. Finally, we conclude by offering a path to implementing this architecture into existing FPAs.

Timely technology transition with minimal risk requires an understanding of fundamental and technology limitations of material synthesis, device operation and design controllable parameters. However, this knowledge-based approach requires substantial investment of resources in the Science and Technology (ST) stage of development. For low volume niche semiconductor technologies of Department of Defense (DoD) relevance, there is little drive for industry to expend their limited resources towards basic research simply because there is no significant return on investment. As a result, technology transition from ST to product development is often delayed, expensive and carries risks. The Army Research Laboratory (ARL) is addressing this problem by establishing a Center for Semiconductor Modeling of Materials and Devices (CSM) that brings together government, academia, and industry in a collaborative fashion to address research opportunities through its Open Campus initiative. This Center leverages combined core competencies of partner organizations, which include a broad knowledge base in modeling, and its validation; sharing of computational, characterization, materials growth and device processing resources; project continuity; and ‘extension of the bench’ via exchange of researchers between affiliated entities. A critical DoD technology is sensing in the infrared (IR) spectrum, where understanding of materials, devices and methods for sensing and processing IR information must continually improve to maintain superiority in combat. In this paper we focus on the historical evolution of IR technology and emphasize the need for understanding of material properties and device operation to accelerate innovation and shorten the cycle time, thereby ensuring timely transition of technology to product development and manufacturing. There are currently two competing IR technologies being pursued, namely the incumbent II-VI Hg 1 - x Cd x Te technology and the III-V Type 2 Superlattices (SLs) technology. A goal of the CSM is to develop physics based models for Type 2 SLs with the capability to timely understand the knowledge gap between what is built and what is designed.

This work presents an in-depth investigation of the properties of complexes composed of hydrogen, silicon or oxygen with carbon, which are major unintentional impurities in undoped GaN. This manuscript is a complement to our previous work on carbon--carbon and carbon-vacancy complexes. We have employed a first-principles method using Heyd-Scuseria-Ernzerhof hybrid functionals within the framework of generalized Kohn-Sham density functional theory. Two H--C, four Si--C and five O--C complexes in different charge states have been considered. After full geometry relaxations, formation energies, binding energies and both thermal and optical transition levels were obtained. The calculated energy levels have been systematically compared with the experimentally observed carbon related trap levels. Furthermore, we computed vibrational frequencies for selected defect complexes and defect concentrations were estimated in the low, mid and high carbon doping scenarios considering two different cases where electrically active defects: (a) only carbon and vacancies and (b) not only carbon and vacancies but also hydrogen, silicon and oxygen. We confirmed that $\mathrm{C_N}$ is a dominant acceptor in GaN. In addition to it, substantial amount of $\mathrm{Si_{Ga}-C_N}$ complex exists in a neutral form. This complex is a likely candidate for unknown form of carbon observed in undoped $n$-type GaN., Comment: 19 pages, 23 figures, 8 tables

The Gesub1-x/subSnsubx/suballoy is a promising material for optoelectronic applications. It offers a tunable wavelength in the infrared (IR) spectrum and high compatibility with complementary metal-oxide-semiconductor (CMOS) technology. However, difficulties in growing device quality Gesub1-x/subSnsubx/subfilms has left the potentiality of this material unexplored. Recent advances in technological processes have renewed the interest toward this material paving the way to potential applications. In this work, we perform a numerical investigation on absorption coefficient, radiative recombination rate, and Auger recombination properties of intrinsic and doped Gesub1-x/subSnsubx/subfor application in the extended-short wavelength infrared and medium wavelength infrared spectrum ranges. We apply a Green's function based model to the Gesub1-x/subSnsubx/subfull electronic band structure determined through an empirical pseudopotential method and determine the dominant recombination mechanism between radiative and Auger processes over a wide range of injection levels.

Infrared (IR) photon detectors must be cryogenically cooled to provide the highest possible performance, usually to temperatures at or below ~ 150K. Such low operating temperatures (Top) impose very stringent requirements on cryogenic coolers. As such, there is a constant push in the industry to engineer new detector architectures that operate at higher temperatures, so called higher operating temperature (HOT) detectors. The ultimate goal for HOT detectors is room temperature operation. While this is not currently possibly for photon detectors, significant increases in Top are nonetheless beneficial in terms of reduced size, weight, power and cost (SWAP-C). The most common HgCdTe IR detector architecture is the P+n heterostructure photodiode (where a capital letter indicates a wide band gap relative to the active layer or “AL”). A variant of this architecture, the P+N−n−N−N heterostructure photodiode, should have a near identical photo-response to the P+n heterostructure, but with significantly lower dark diffusion current. The P+N−n−N−N heterostructure utilizes a very low doped AL, surrounded on both sides by wide-gap layers. The low doping in the AL, allows the AL to be fully depleted, which drastically reduces the Auger recombination rate in that layer. Minimizing the Auger recombination rate reduces the intrinsic dark diffusion current, thereby increasing Top. Note when we use the term “recombination rate” for photodiodes, we are actually referring to the net generation and recombination of minority carriers (and corresponding dark currents) by the Auger process. For these benefits to be realized, these devices must be intrinsically limited and well passivated. The focus of this proceeding is on studying the fundamental physics of the intrinsic dark currents in ideal P+N−n−N−N heterostructures, namely Auger recombination. Due to the complexity of these devices, specifically the presence of multiple heterojunctions, numerical device modeling techniques must be utilized to predict and understand the device operation, as analytical models do not exist for heterojunction devices.

Indium gallium arsenide (In 1−x Ga x As) is an ideal material choice for short wave infrared (SWIR) imaging due to its low dark current and excellent collection efficiency. By increasing the indium composition from 53% to 83%, it is possible to decrease the energy gap from 0.74 eV to 0.47 eV and consequently increase the cutoff wavelength from 1.7 μm to 2.63 μm for extended short wavelength (ESWIR) sensing. In this work, we apply our well-established numerical modeling methodology to the ESWIR InGaAs system to determine the intrinsic performance of pixel detectors. Furthermore, we investigate the effects of different buffer/cap materials. To accomplish this, we have developed composition-dependent models for In 1−x Ga x As, In 1−x Al x As, and InAs 1−y P y . Using a Green’s function formalism, we calculate the intrinsic recombination coefficients (Auger, radiative) to model the diffusion-limited behavior of the absorbing layer under ideal conditions. Our simulations indicate that, for a given total thickness of the buffer and absorbing layer, structures utilizing a linearly graded small-gap InGaAs buffer will produce two orders of magnitude more dark current than those with a wide gap, such as InAlAs or InAsP. Furthermore, when compared with experimental results for ESWIR photodiodes and arrays, we estimate that there is still a 1.5x magnitude of reduction in dark current before reaching diffusion-limited behavior.

We analytically establish an anomalous transverse flow of heat in 8-\textit{Pmmn} borophene, one of the several two-dimensional (2D) allotropes of Boron (B). The dispersion of this allotrope contains a pair of anisotropic and tilted Dirac cones which are gapped by placing the 2D \textit{B} sheet under an intense circularly-polarized illumination. A gap in the Dirac dispersion leads to a finite Berry curvature and connected anomalous Hall effects. In the case of thermoelectrics, this manifests as a heat current perpendicular to the temperature gradient - the thermal Hall effect. A quantitative calculation of the attendant thermal Hall conductivity reveals dependence on the intrinsic anisotropy and tilt of the Dirac cone. Further, by estimating the longitudinal thermal conductivity using the Weidemann-Franz law, we also outline steps to compute the thermal Hall angle that gauges the generation efficiency of such transverse heat processes. Finally, we touch upon the idea of thermal rectification wherein the direction of flow of the anomalous heat reverses through a simple switch of the polarization of incident light and is of interest in thermal logic circuits., 5 pages, 3 figures

We report on the modulation transfer function (MTF) in short-wave infrared indium gallium arsenide (InGaAs) on indium phosphide (InP) planar photodetector arrays. Our two-dimensional numerical method consists of optical simulations using the finite-difference time domain method and drift-diffusion simulations using the finite-element method. This parametric study investigates MTF dependence on pitch, the addition of refractive microlenses, the thickness of the InGaAs absorber, and the doping concentration of the InGaAs absorber. A focus is placed on the connection between the lateral diffusion of photogenerated holes in InGaAs and the MTF. It is found that the MTF of small-pitch arrays exhibit sub-ideal behavior due to pixel cross-talk resulting from a long minority carrier diffusion length. By incorporating monolithic microlenses with the InP substrate, the MTF response is improved for all pitches investigated, particularly for spatial frequencies near the respective cutoff frequencies. We also find a strong dependence of the MTF on the thickness and doping concentration in the absorbing region. Trends in dark current and quantum efficiency are reported.

We report on a possible optical tuning of the spin Hall conductivity in mono-layer transition metal dichalcogenides. Light beams of frequencies much higher than the energy scale of the system (the \textit{off-resonant} condition) does not excite electrons but rearranges the band structure. The rearrangement is quantitatively established using the Floquet formalism. For such a system of mono-layer transition metal dichalcogenides, the spin Hall conductivity (calculated with the Kubo expression in presence of disorder) exhibits a drop at higher frequencies and lower intensities. Finally, we compare the spin Hall conductivity of the higher spin-orbit coupled WSe$_{2} $ to MoS$_{2} $; the spin Hall conductivity of WSe$_{2}$ was found to be larger., Comment: 4 pages, 3 figures

The potential applications of germanium and its alloys in infrared silicon-based photonics have led to a renewed interest in their optical properties. In this letter, we report on the numerical determination of Auger coefficients at T = 300 K for relaxed and biaxially strained germanium. We use a Green's function based model that takes into account all relevant direct and phonon-assisted processes and perform calculations up to a strain level corresponding to the transition from indirect to direct energy gap. We have considered excess carrier concentrations ranging from 1016 cm−3 to 5 × 1019 cm−3. For use in device level simulations, we also provide fitting formulas for the calculated electron and hole Auger coefficients as functions of carrier density.

We discuss some of the key issues to be addressed along the way to complement, and possibly to replace, the standard semiclassical Boltzmann picture with genuine quantum approaches for the simulation of carrier transport and recombination in GaN-based LEDs, with the goal of gradually removing the fitting parameters presently required by semiempirical "quantum corrections" and to better understand the processes responsible for the efficiency droop. As examples of augmented semiclassical models, we present a three-step description of trap-assisted tunneling, especially relevant below the optical turn-on, and a carrier-density-dependent estimate of the phonon-assisted capture rate from bulk states to quantum wells (QWs). Moving to genuine quantum models, we solve the semiconductor Bloch equations to calculate the gain/absorption spectra of AlGaN/GaN QWs, and we discuss our first simulations of spatially and energetically resolved currents across the active region of a single-QW LED based on the nonequilibrium Green's function approach.

The heat capacity of conduction electrons obtained from the Sommerfeld expansion is shown to be tunable via the Rashba and Dresselhaus spin-orbit coupling parameters. Using an AlInSb/InSb/AlInSb as a representative heterostructure with alterable well and asymmetric barrier regions, the heat capacity is found to be higher for the spin-down electrons and suffers a reduction for wider wells. A further lowering is obtained through the application of an uniaxial strain. Finally, we suggest a method to determine the spin lifetimes for spins relaxing via the D'yakonov-Perel' mechanism from experimental estimates of thermodynamic potentials such as the Helmholtz free energy and the heat capacity., Comment: 4 pages; 3 figures

We investigate the various cation substitutional dopants in Ga2O3 for the possibility of p–type conductivity using density functional theory. Our calculations include both standard density functional theory and hybrid functional calculations. We demonstrate that all the investigated dopants result in deep acceptor levels, not able to contribute to the p–type conductivity of Ga2O3. In light of these results, we compare our findings with other wide bandgap oxides and reexamine previous experiments on zinc doping in Ga2O3.

Various forms of carbon based complexes in GaN are studied with first-principles calculations employing Heyd-Scuseria-Ernzerhof hybrid functional within the framework of density functional theory. We consider carbon complexes made of the combinations of single impurities, i.e. $\mathrm{C_N-C_{Ga}}$, $\mathrm{C_I-C_N}$ and $\mathrm{C_I-C_{Ga}}$, where $\mathrm{C_N}$, $\mathrm{C_{Ga}}$ and $\mathrm{C_I}$ denote C substituting nitrogen, C substituting gallium and interstitial C, respectively, and of neighboring gallium/nitrogen vacancies ($\mathrm{V_{Ga}}$/$\mathrm{V_N}$), i.e. $\mathrm{C_N-V_{Ga}}$ and $\mathrm{C_{Ga}-V_N}$. Formation energies are computed for all these configurations with different charge states after full geometry optimizations. From our calculated formation energies, thermodynamic transition levels are evaluated, which are related to the thermal activation energies observed in experimental techniques such as deep level transient spectroscopy. Furthermore, the lattice relaxation energies (Franck-Condon shift) are computed to obtain optical activation energies, which are observed in experimental techniques such as deep level optical spectroscopy. We compare our calculated values of activation energies with the energies of experimentally observed C-related trap levels and identify the physical origins of these traps, which are unknown before., Comment: 17 pages, 15 figures, 12 tables. Replacement for published version

We study the optical behavior of an arrangement in which the interface between a linear and non-linear dielectric media is covered by an embedded mono-layer of transition metal dichalcogenides (TMDC). The optical behavior is qualitatively obtained through transmission and reflection coefficients which are a function of the third order non-linear susceptibility of the Kerr-type dielectric and the inter-band optical conductivity of the TMDC mono-layer. The inter-band optical conductivity of the TMDC mono-layer is calculated using the Kubo formalism from the linear response theory. In particular, we theoretically demonstrate that the optical response of this structure can be switched between the total internal reflection and a normal transmission regime by controlling the intensity of the incident radiation. The reflection and transmission functions are shown to be amenable to further control by altering the inter-band optical conductivity of the embedded TMDC mono-layer. The optical conductivity is directly related to its energy dispersion. We specifically choose two TMDC mono-layers, MoS2 and WSe2, which have nearly identical dispersion parameters apart from a much stronger spin-orbit coupling in the latter. The stronger spin-orbit coupling in WSe2 does not significantly alter the inter-band optical conductivity to manifest as an enhanced reflection spectrum. However, we find that application of an external perturbation such as strain could be effectively used to modulate the overall optical response. We conclude by discussing briefly the phenomenon of optical bistability which arises in materials exhibiting optical non-linearity via an intensity-dependent refractive index.

Intrinsic carrier lifetime due to radiative and Auger recombination in HgCdTe and strained InGaAs has been computed in the extended short-wavelength infrared (ESWIR) spectrum from 1.7 μm to 2.7 μm. Using the Green's function theory, both direct and phonon-assisted indirect Auger recombination rates as well as the radiative recombination rates are calculated for different cutoff wavelengths at 300 K with full band structures of the materials. In order to properly model the full band structures of strained InGaAs, an empirical pseudo-potential model for the alloy is fitted using the virtual crystal approximation with spin-orbit coupling included. The results showed that for InxGa1−xAs grown on InP substrate, the compressive strain, which presents in the film when the cutoff wavelength is longer than 1.7 μm, leads to decrease of Auger recombination rate and increase of radiative recombination rate. Since the dominant intrinsic recombination mechanism in this spectral range is radiative recombination, the ove...