1. Electronic Properties of Armchair Black Phosphorene Nanoribbons Edge-Modified by Transition Elements V, Cr, and Mn
- Author
-
Liping Zhou, Xue-Feng Wang, Jiong-Hua Huang, and Yushen Liu
- Subjects
Materials science ,Spin diode ,Semiconductor-metal transition ,02 engineering and technology ,010402 general chemistry ,01 natural sciences ,symbols.namesake ,chemistry.chemical_compound ,Black phosphorene nanoribbons ,Transition metal ,Electric field ,lcsh:TA401-492 ,General Materials Science ,Spin (physics) ,Condensed matter physics ,Nano Express ,Edge functionalization ,Heterojunction ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,0104 chemical sciences ,Phosphorene ,Ferromagnetism ,Stark effect ,chemistry ,symbols ,lcsh:Materials of engineering and construction. Mechanics of materials ,Density functional theory ,0210 nano-technology ,Half semiconductor - Abstract
The structural, electrical, and magnetic properties of armchair black phosphorene nanoribbons (APNRs) edge-functionalized by transitional metal (TM) elements V, Cr, and Mn were studied by the density functional theory combined with the non-equilibrium Green’s function. Spin-polarized edge states introduce great varieties to the electronic structures of TM-APNRs. For APNRs with Mn-stitched edge, their band structures exhibit half-semiconductor electrical properties in the ferromagnetic state. A transverse electric field can then make the Mn-APNRs metallic by shifting the conduction bands of edge states via the Stark effect. The Mn/Cr-APNR heterojunction may be used to fabricate spin p-n diode where strong rectification acts only on one spin.
- Published
- 2019