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Growth of 2D materials under ultrahigh-vacuum (UHV) conditions allows for an in situ characterization of samples with direct spectroscopic insight. Heteroepitaxy of transition-metal dichalcogenides (TMDs) in UHV remains a challenge for integration of several different monolayers into new functional systems. In this work, we epitaxially grow lateral WS2–MoS2 and vertical WS2/MoS2 heterostructures on graphene. By means of scanning tunneling spectroscopy (STS), we first examined the electronic structure of monolayer MoS2, WS2, and WS2/MoS2 vertical heterostructure. Moreover, we investigate a band bending in the vicinity of the narrow one-dimensional (1D) interface of the WS2–MoS2 lateral heterostructure and mirror twin boundary (MTB) in the WS2/MoS2 vertical heterostructure. Density functional theory (DFT) is used for the calculation of the band structures, as well as for the density of states (DOS) maps at the interfaces. For the WS2–MoS2 lateral heterostructure, we confirm type-II band alignment and determine the corresponding depletion regions, charge densities, and the electric field at the interface. For the MTB, we observe a symmetric upward bend bending and relate it to the dielectric screening of graphene affecting dominantly the MoS2 layer. Quasi-freestanding heterostructures with sharp interfaces, large built-in electric field, and narrow depletion region widths are proper candidates for future designing of electronic and optoelectronic devices.

We report the temperature and magnetic field dependence of transport properties in epitaxial films of the manganite La$_{1-x}$Ca$_{x}$MnO$_{3}$ in the overdoped region of the phase diagram for $x > 0.5$, where a charge--ordered (CO) and an antiferromagnetic (AF) phase are present. Resistivity, magnetoresistance and angular dependence of magnetoresistance were measured in the temperature interval $4.2 ~\mathrm{K} < T < 300 ~\mathrm{K}$, for three concentrations $x = 0.52, 0.58$ and $0.75$ and in magnetic fields up to 5 T. The semiconductor/insulator--like behavior in zero field was observed in the entire temperature range for all three concentrations \textit{x} and the electric conduction, at lower temperatures, in the CO state obeys 3D Mott's variable--range hopping model. A huge negative magnetoresistance for $x = 0.52$ and $x = 0.58$, a metal--insulator transition for $B > 3 ~\mathrm{T}$ for $x = 0.52$ and the presence of anisotropy in magnetoresistance for $x = 0.52$ and $x = 0.58$ show the fingerprints of colossal magnetoresistance (CMR) behavior implying the existence of ferromagnetic (FM) clusters. The declining influence of the FM clusters in the CO/AF part of the phase diagram with increasing $x$ contributes to a possible explanation that a phase coexistence is the origin of the CMR phenomenon., 33 pages, 7 figures, 1 table, accepted in Thin Solid Films

We investigate the dc resistivity and Hall effect of the quasi-two-dimensional organic materials κ–(ET)2X, where X=Ag2(CN)3 and B(CN)4 and compare them with the results for X=Cu2(CN)3. All three compounds are considered to be quantum-spin-disordered Mott insulators. Despite high similarities in chemical composition and crystal structure, large differences in the dc resistivity and Hall coefficient are found. While around room temperature the dc transport properties are dominantly determined by the strength of the electron correlations, upon reducing the temperature, dc transport happens by hopping due to inherent disorder. The most disordered compound with X=Cu2(CN)3 turns out to have the lowest dc resistivity and the highest charge carrier density, i.e., in the phase diagram it is located closest to the metal-insulator transition. The least disordered compound with X=B(CN)4 shows the highest resistivity and the lowest carrier density, i.e., lies farthest from the metal-insulator transition. We explain such counterintuitive behavior within the theory of Mott-Anderson localization as a consequence of disorder-induced localized states within the correlation gap.

The cobalt-based Heusler alloys are promising for spintronic applications, thanks to their high spin polarization and half-metallic character. This work investigates the spin-dependent transport and thermoelectric effects in epitaxial Co${}_{2}$TiSn thin films, with and without V doping. The anomalous Nernst angle and anomalous Hall angle are both determined, and the relationship between these two important parameters is discussed. These experimental results are a step toward realizing spin-caloritronic devices for efficient on-chip energy harvesting of waste heat.

The Mott insulator κ-(BEDT-TTF)2Ag2(CN)3 forms a highly-frustrated triangular lattice of S = 1/2 dimers with a possible quantum-spin-liquid state. Our experimental and numerical studies reveal the emergence of a slight charge imbalance between crystallographically inequivalent sites, relaxor dielectric response, and hopping dc transport. In a broader perspective we conclude that the universal properties of strongly-correlated charge-transfer salts with spin liquid state are an anion-supported valence band and cyanide-induced quasidegenerate electronic configurations in the relaxed state. The generic low-energy excitations are caused by charged domain walls rather than by fluctuating electric dipoles. They give rise to glassy dynamics characteristic of dimerized Mott insulators, including the sibling compound κ-(BEDT-TTF)2Cu2(CN)3.

We have in detail characterized the anisotropic charge response of the dimer Mott insulator $\ensuremath{\kappa}\text{\ensuremath{-}}(\text{BEDT-TTF}{)}_{2}{\mathrm{Cu}}_{2}(\text{CN}{)}_{3}$ by dc conductivity, Hall effect, and dielectric spectroscopy. At room temperature, the Hall coefficient is positive and close to the value expected from stoichiometry; the temperature behavior follows the dc resistivity $\ensuremath{\rho}(T)$. Within the planes the dc conductivity is well described by variable-range hopping in two dimensions; this model, however, fails for the out-of-plane direction. An unusually broad in-plane dielectric relaxation is detected below about 60 K; it slows down much faster than the dc conductivity following an Arrhenius law. At around 17 K, we can identify a pronounced dielectric anomaly concomitantly with anomalous features in the mean relaxation time and spectral broadening. The out-of-plane relaxation, on the other hand, shows a much weaker dielectric anomaly; it closely follows the temperature behavior of the respective dc resistivity. At lower temperatures, the dielectric constant becomes smaller both within and perpendicular to the planes; also, the relaxation levels off. The observed behavior bears features of relaxorlike ferroelectricity. Because heterogeneities impede its long-range development, only a weak-tunneling-like dynamics persists at low temperatures. We suggest that the random potential and domain structure gradually emerge due to the coupling to the anion network.

We have measured the Hall effect on recently synthesized single crystals of quasi-one-dimensional organic conductor TTF-TCNQ, a well known charge transfer complex that has two kinds of conductive stacks: the donor (TTF) and the acceptor (TCNQ) chains. The measurements were performed in the temperature interval 30 K < T < 300 K and for several different magnetic field and current directions through the crystal. By applying the equivalent isotropic sample (EIS) approach, we have demonstrated the importance of the choice of optimal geometry for accurate Hall effect measurements. Our results show, contrary to past belief, that the Hall coefficient does not depend on the geometry of measurements and that the Hall coefficient value is around zero in high temperature region (T > 150 K), implying that there is no dominance of either TTF or TCNQ chain. At lower temperatures, our measurements clearly prove that all three phase transitions of TTF-TCNQ could be identified from Hall effect measurements., Revised version; 7 pages, 5 figures

We present an improved approach to the impedance spectroscopy of conductive liquid samples using four-electrode measurements. Our method enables impedance measurements of conductive liquids down to the sub-Hertz frequencies, avoiding the electrode polarization effects that usually cripple standard impedance analysers. We have successfully tested our apparatus with aqueous solutions of potassium chloride and gelatin. The first substance has shown flat spectra from $\sim$100 kHz down to sub-Hz range, while the results on gelatin clearly show the existence of two distinct low frequency conductive relaxations., 5 pages, 6 figures

We study the extrinsic spin Hall effect induced by Ir impurities in Cu by injecting a pure spin current into a CuIr wire from a lateral spin valve structure. While no spin Hall effect is observed without Ir impurity, the spin Hall resistivity of CuIr increases linearly with the impurity concentration. The spin Hall angle of CuIr, $(2.1 \pm 0.6)$% throughout the concentration range between 1% and 12%, is practically independent of temperature. These results represent a clear example of predominant skew scattering extrinsic contribution to the spin Hall effect in a nonmagnetic alloy., 5 pages, 4 figures

Among perovskites, SrTiO_3 (STO) is one of the most widely studied oxides because of its potential in many applications in oxide electronics. Recently it has been shown that irradiated STO surfaces exhibit high-mobility conduction in contrast to the insulating behaviour of stoichiometric STO single crystals. The possibility of modifying the properties of solids just by etching their surfaces opens up new perspectives for engineering of the functional properties of materials. But for that purpose, a deeper knowledge of damage extension and its consequences on the physical properties is highly desired. Bearing this in mind, we have characterized the spatial distribution and the nature of vacancy defects in insulating as-received as well as in ion-irradiated STO substrates exhibiting high-mobility conduction. Because tiny amounts of oxygen vacancies can trigger substantial modifications of the physical properties of STO, positron annihilation spectroscopy techniques appear as an appropriate characterization tool. We show that Ti vacancies are native defects homogeneously distributed in as-received substrates. In contrast, the dominant vacancy defects consist of non-homogeneous distributions of cation-oxygen vacancy complexes in ion-etched substrates. Their spatial extension is tuned over a few microns in ionetched samples. Our results shed light on the transport mechanisms of conductive STO crystals and on strategies for defect-engineered oxide quantum wells, wires and dots.

Using a combination of advanced characterization tools (positron annihilation spectroscopy, conductive-tip atomic force microscopy, and high-field magnetotransport), we have studied the extension, origin and properties of the high mobility electron gas (HMEG) generated by etching the SrTiO(3) surfaces with Ar(+) ions. Contrary to previous assumptions, we show that this HMEG is not confined to nanometric thickness but extends to a few micrometer from the surface. We discuss this unanticipated large spatial extension in terms of the striking large diffusion of oxygen vacancy-related defects. (C) 2010 American Institute of Physics.

We present Hall-effect measurements of two-leg ladder compounds ${\text{Sr}}_{14\ensuremath{-}x}{\text{Ca}}_{x}{\text{Cu}}_{24}{\text{O}}_{41}$ $(0\ensuremath{\le}x\ensuremath{\le}11.5)$ with the aim to determine the number of carriers participating in dc transport. Distribution of holes between the ladder and chain subsystems is one of the crucial questions important for understanding the physics of these compounds. Our Hall-effect and resistivity measurements show typical semiconducting behavior for $xl11.5$. However, for $x=11.5$, the results are completely different, and the Hall coefficient and resistivity behavior are qualitatively similar to that of high-temperature copper-oxide superconductors. We have determined the effective number of carriers at room temperature and compared it to the number of holes in the ladders obtained by other experimental techniques. We propose that going from $x=0$ to $x=11.5$ less than 1 hole per f.u. is added to the ladders and is responsible for a pronounced change in resistivity with Ca doping.

${\text{Ru}}_{1\ensuremath{-}x}{\text{Sn}}_{x}{\text{Sr}}_{2}{\text{EuCu}}_{2}{\text{O}}_{8}$ and ${\text{Ru}}_{1\ensuremath{-}x}{\text{Sn}}_{x}{\text{Sr}}_{2}{\text{GdCu}}_{2}{\text{O}}_{8}$ have been comprehensively studied by microwave and dc resistivity and magnetoresistivity and by the Hall measurements. The ruthenium magnetic ordering temperature ${T}_{m}$ is considerably reduced with increasing Sn content. However, doping with Sn leads to only slight reduction of the superconducting critical temperature ${T}_{c}$ accompanied with the increase in the upper critical field ${B}_{c2}$, indicating an increased disorder in the system and a reduced scattering length of the conducting holes in ${\text{CuO}}_{2}$ layers. In spite of the increased scattering rate, the normal state resistivity and the Hall resistivity are reduced with respect to the pure compound, due to the increased number of itinerant holes in ${\text{CuO}}_{2}$ layers, which represent the main conductivity channel. Most of the electrons in ${\text{RuO}}_{2}$ layers are presumably localized, but the observed negative magnetoresistance and the extraordinary Hall effect lead to the conclusion that there exists a small number of itinerant electrons in ${\text{RuO}}_{2}$ layers that exhibit colossal magnetoresistance.

Systematic study of electrical resistivity of Hf_{100-x}Fe_x (x=20,25), Hf_{100-x}Cu_x (x=30,40,50), and Ti_{65}Cu_{35} metallic glasses has been done in the temperature range 0.3 K - 290 K, and in magnetic fields B = 0.44 K, which is well above T_c of pure crystalline Hf (0.13 K). From the initial slopes of the upper critical fields, (dH_{c2}/dT)_{T_c}, and resistivities we determined the dressed electronic densities of states, N_{\gamma}(E_F), for all alloys. Both T_c and N_{\gamma}(E_F) decrease with increasing x (Fe and Cu content). The results are compared with those for corresponding Zr-base metallic glasses and ion-implanted Hf films., Comment: 9 pages, 4 figures, 1 table

We have investigated the dimensionality and origin of the magnetotransport properties of LaAlO3 films epitaxially grown on TiO2-terminated SrTiO3(001) substrates. High-mobility conduction is observed at low deposition oxygen pressures (PO2

At the interface between complex insulating oxides, novel phases with interesting properties may occur, such as the metallic state reported in the LaAlO3/SrTiO3 system. While this state has been predicted and reported to be confined at the interface, some works indicate a much broader spatial extension, thereby questioning its origin. Here we provide for the first time a direct determination of the carrier density profile of this system through resistance profile mappings collected in cross-section LaAlO3/SrTiO3 samples with a conducting-tip atomic force microscope (CT-AFM). We find that, depending upon specific growth protocols, the spatial extension of the high-mobility electron gas can be varied from hundreds of microns into SrTiO3 to a few nanometers next to the LaAlO3/SrTiO3 interface. Our results emphasize the potential of CT-AFM as a novel tool to characterize complex oxide interfaces and provide us with a definitive and conclusive way to reconcile the body of experimental data in this system., Comment: This updated version contains new experimental data

At the (001) interface between the two band-insulators LaAlO3 and SrTiO3, a high-mobility electron gas may appear, which has been the object of numerous works over the last four years. Its origin is a subject of debate between the interface polarity and unintended doping. Here we use electron energy loss 'spectrum images', recorded in cross-section in a scanning transmission electron microscope, to analyse the Ti3+ ratio, characteristic of extra electrons. We find an interface concentration of Ti3+ that depends on growth conditions.