1. High-mobility carriers induced by chemical doping in the candidate nodal-line semimetal CaAgP
- Author
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Yoshihiko Okamoto, Hiroshi Kageyama, Youichi Yamakawa, Naoyuki Katayama, Koshi Takenaka, Kazushige Saigusa, Ai Yamakage, Taichi Wada, Takao Sasagawa, and Hiroshi Takatsu
- Subjects
Superconductivity ,Condensed Matter - Materials Science ,Materials science ,Condensed matter physics ,Magnetoresistance ,Doping ,Materials Science (cond-mat.mtrl-sci) ,FOS: Physical sciences ,02 engineering and technology ,Electron ,021001 nanoscience & nanotechnology ,01 natural sciences ,Semimetal ,Magnetic field ,Condensed Matter::Materials Science ,Electrical resistivity and conductivity ,Condensed Matter::Superconductivity ,0103 physical sciences ,Condensed Matter::Strongly Correlated Electrons ,010306 general physics ,0210 nano-technology ,Line (formation) - Abstract
We report the electronic properties of single crystals of candidate nodal-line semimetal CaAgP. The transport properties of CaAgP are understood within the framework of a hole-doped nodal-line semimetal. In contrast, Pd-doped CaAgP shows a drastic increase of magnetoresistance at low magnetic fields and a strong decrease of electrical resistivity at low temperatures probably due to weak antilocalization. Hall conductivity data indicated that the Pd-doped CaAgP has not only hole carriers induced by the Pd doping, but also high-mobility electron carriers in proximity of the Dirac point. Electrical resistivity of Pd-doped CaAgP also showed a superconducting transition with onset temperature of 1.7-1.8 K., 6 pages, 3 figures, accepted for publication in Phys. Rev. B
- Published
- 2020