1. Acoustic-stimulated relaxation of GaAs1–хPх LEDs electroluminescence intensity
- Author
-
O.V. Konoreva
- Subjects
Materials science ,led ,gap ,02 engineering and technology ,Electroluminescence ,01 natural sciences ,law.invention ,electroluminescence ,law ,0103 physical sciences ,defects of dark lines ,Electrical and Electronic Engineering ,010302 applied physics ,Condensed matter physics ,irradiation ,ultrasound ,dark spots’ defects ,021001 nanoscience & nanotechnology ,Atomic and Molecular Physics, and Optics ,lcsh:QC1-999 ,Electronic, Optical and Magnetic Materials ,Intensity (physics) ,us-treatment ,Relaxation (physics) ,0210 nano-technology ,gaas1–хpх ,lcsh:Physics ,Light-emitting diode ,dislocations - Abstract
The effect of ultrasonic (US) treatment on electroluminescence of initial and irradiated with 2-MeV electrons (Φ = 8.24∙1014 e/cm2) GaAs-GaP LEDs grown on solid solution base was studied. It was found that luminescence intensity of samples previously loaded with US increased during long-term storage (t = 15 h). Passing the current through the diode generates the relaxation process of radiation brightness falling followed by the growth when ultrasound is switched on. The results of calculation of the dislocation density responsible for electroluminescence quenching within the region of electroluminescence degradation are adduced. It was found the ultrasound effect on diodes irradiated with high-energy electrons.
- Published
- 2020