1. Photosensitivity of pulsed laser deposited Ge-Sb-Se thin films
- Author
-
Cristian Focsa, Petr Němec, Virginie Nazabal, M. Olivier, R. Boidin, Georges Boudebs, Infectiologie et Santé Publique (UMR ISP), Institut National de la Recherche Agronomique (INRA)-Université de Tours (UT), Department of Graphic Arts and Photophysics [University of Pardubice], Faculty of Chemical Technology [University of Pardubice], University of Pardubice-University of Pardubice, Propriétés Optiques des Matériaux et Applications (POMA), Université d'Angers (UA)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Physique des Lasers, Atomes et Molécules - UMR 8523 (PhLAM), Université de Lille-Centre National de la Recherche Scientifique (CNRS), Institut des Sciences Chimiques de Rennes (ISCR), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), 15-02634S, Grantová Agentura České Republiky, CZ.1.07/2.3.00/30.0058, Ministry of Education, Youth, and Sports of the Czech Republic, Development of Research Teams at the University of Pardubice, CNRS (PICS-CAPLA), UR Infectiologie animale et Santé publique (UR IASP), Institut National de la Recherche Agronomique (INRA), Faculty of Chemical Technology [University Pardubice], University Pardubice-University Pardubice, Centre National de la Recherche Scientifique (CNRS)-Université d'Angers (UA), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA), Institut National de la Recherche Agronomique (INRA)-Université de Tours, and Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)
- Subjects
010302 applied physics ,Materials science ,Band gap ,business.industry ,Scanning electron microscope ,02 engineering and technology ,[CHIM.MATE]Chemical Sciences/Material chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,Electronic, Optical and Magnetic Materials ,Pulsed laser deposition ,Amorphous solid ,Carbon film ,0103 physical sciences ,Optoelectronics ,Irradiation ,Thin film ,0210 nano-technology ,business ,Refractive index ,ComputingMilieux_MISCELLANEOUS - Abstract
Pulsed laser deposition was used to prepare amorphous thin films from (GeSe2)100-x (Sb2Se3)x system, where x is varying from 0 to 60. Fabricated films present a good morphology with no cracks nor breaks and relatively low roughness. To study their photosensitivity under irradiation with energy close to band gap, a comparison of their optical properties (refractive index and band gap energy) before and after irradiation is performed in both, as-deposited and annealed states. In linear regime, annealed films seem to be photostable when x≥30. In nonlinear regime, highest photoinduced threshold intensity values were found for films with x = 10, 16.7 and x = 30, 40. Thus, the highest photostability in both, linear and nonlinear regimes of irradiation, was observed for layers with x = 30 and 40. Finally, the structure of the films is discussed based on Raman scattering spectroscopy results.
- Published
- 2015
- Full Text
- View/download PDF