1. Controllable etching-induced contact enhancement for high-performance carbon nanotube thin-film transistors
- Author
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Hehua Jin, Qianjin Lv, Chuanling Men, Xiaoqin Yu, Qingwen Li, Qijun Song, Zhengxia Lv, Song Qiu, Bing Gao, and Dan Liu
- Subjects
Electron mobility ,Plasma etching ,Materials science ,business.industry ,General Chemical Engineering ,Contact resistance ,02 engineering and technology ,General Chemistry ,Carbon nanotube ,010402 general chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,0104 chemical sciences ,law.invention ,Semiconductor ,Etching (microfabrication) ,law ,Thin-film transistor ,Optoelectronics ,Thin film ,0210 nano-technology ,business - Abstract
Semiconducting single-walled carbon nanotubes (s-SWNTs) show great promises in advanced electronics. However, contact resistance between the nanotubes and metal electrode has long been a bottleneck to the development of s-SWNTs in high-performance electronic devices. Here we demonstrate a simple and controllable strategy for enhancing the electrode contact and therefore the performance of s-SWNT thin film transistors by plasma etching treatment, which effectively removes the polymer residues, including the photoresist and the conjugated molecules, adsorbed on the surface of s-SWNTs. As a result, the contact resistance is reduced by 3 times and the carrier mobility rises by up to 70%. Our method is compatible with current silicon semiconductor processing technology, making it a viable effective approach to large-scale application of s-SWNTs in the electronics industry.
- Published
- 2019
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