1. Revealing the high sensitivity in the metal toinsulator transition properties of the pulsed laser deposited VO2 thin films
- Author
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Kangkang Meng, Tanzhao Zhang, Xinyou Ke, Yong Jiang, Jikun Chen, Zhipeng Li, Xuanchi Zhou, Fengbo Yan, Xiaoguang Xu, Yong Wu, and Jun Miao
- Subjects
Materials science ,Oxide ,Vanadium ,chemistry.chemical_element ,02 engineering and technology ,Substrate (electronics) ,01 natural sciences ,chemistry.chemical_compound ,Transition metal ,Phase (matter) ,0103 physical sciences ,Thermoelectric effect ,Materials Chemistry ,Thin film ,010302 applied physics ,business.industry ,Process Chemistry and Technology ,021001 nanoscience & nanotechnology ,Thermoelectric materials ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,chemistry ,Ceramics and Composites ,Optoelectronics ,0210 nano-technology ,business ,human activities - Abstract
Vanadium dioxide (VO2) is known as a typical 3d-orbital transition metal oxide exhibiting the metal-to-insulator-transition (MIT) property near room temperature. However, their electronic applications have been challenged by the quality and uniformity of VO2 thin films. In this work, we demonstrate the high sensitivity in the valence charge of vanadium and the MIT properties of the VO2 thin films to the deposition temperature. This observation indicates the necessity to eliminate the inhomogeneity in the temperature distribution of substrate during the vacuum-deposition process of VO2. In addition, a high thermoelectric power factor (PF, e.g., exceeding 1 μWcm−1K−2) was achieved in the metallic phase of the VO2 thin films and this value is comparable to typical organic or oxide thermoelectric materials. We believe this high PF enriches the potential functionality in thermoelectric energy conversions beyond the existing electronic applications of the current vacuum-grown VO2 thin films.
- Published
- 2021
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