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Fluoridation of HfO2 was carried out with three commonly used solid-state fluoridation agents: PVDF, PTFE, and NH4HF2. Clear and reproducible differences are observed in the reaction products of the fluoropolymer reagents and NH4HF2 with the latter more readily reacting in air. Strong evidence of distinct, previously unreported hafnium oxyfluoride phases is produced by both reactions, and efforts to isolate them were successful for the air-NH4HF2 reaction. Synchrotron XRD, 19F NMR, and elemental analysis were employed to characterize the phase-pure material which appears to be analogous to known Zr-O-F phases with anion-deficient α-UO3 structures such as Zr7O9F10. Comparison with the hydrolysis of β-HfF4 under identical conditions depicts that the NH4HF2 route produces the oxyfluoride with greater selectivity and at lower temperatures. Thermodynamic calculations were employed to explain this result. Potential reaction pathways for the NH4HF2 fluoridation of HfO2 are discussed.

Single crystals of LiIn2SbO6 have been synthesized using a Li2MoO4 flux and characterized with X-ray diffraction. The compound crystallizes in a new structure-type with a rutile-related framework. ...

The anion-deficient fluorite-related family of materials exhibits a number of commercially useful properties arising from the specific arrangement of anion vacancies in each structure. One recently reported member, Zn0.456In1.084Ge0.46O3, is the only known example with its particular complex structure in which cation coordinations span one 4-coordinate (4b), two 6-coordinate (8e and 16f), and one 8-coordinate (4a) site. A new, complete, solid solution (CuxZn1–x)0.456In1.084Ge0.46O3, (0 ≤ x ≤ 1) has been discovered via the isovalent substitution of Cu2+ for Zn2+, significantly expanding the known phase space of this structure. Synchrotron X-ray data confirm the ZIGO structure over the entire composition range. Inclusion of Cu in the structure is found to occur exclusively at the 16f site, increasing the number of cations mixed on that site from three to four, while all others remain singly occupied, including the other 6-coordinate (8e) position. Furthermore, transmission electron microscopy investigations...

We initiate the study of X-ray tomography on sub-Riemannian manifolds, for which the Heisenberg group exhibits the simplest nontrivial example. With the language of the group Fourier Transform, we prove an operator-valued incarnation of the Fourier Slice Theorem, and apply this new tool to show that a sufficiently regular function on the Heisenberg group is determined by its line integrals over sub-Riemannian geodesics. We also consider the family of taming metrics $g_\epsilon$ approximating the sub-Riemannian metric, and show that the associated X-ray transform is injective for all $\epsilon>0$. This result gives a concrete example of an injective X-ray transform in a geometry with an abundance of conjugate points., Comment: References added; some sections partially revised; minor errors fixed; results unchanged

The magnetoresistance effect in WTe2, a layered semimetal, is extremely large: the electrical resistance can be changed by more than 13 million per cent at very high magnetic fields and low temperatures. Apply a magnetic field to a magnetoresistive material and its electrical resistance changes — a technologically useful phenomenon that is harnessed, for example, in the data-reading sensors of hard drives. Mazhar Ali and colleagues have now identified a material (tungsten ditelluride or WTe2) in which the magnetoresistance effect is unusually large: the electrical resistance can be changed by more than 13 million per cent. Its remarkable magnetoresitance is evident at very high magnetic fields and at extremely low temperatures, so practical applications are not yet in prospect. But this finding suggests new directions in the study of magnetoresistivity that could ultimately lead to new uses of this effect. Magnetoresistance is the change in a material’s electrical resistance in response to an applied magnetic field. Materials with large magnetoresistance have found use as magnetic sensors1, in magnetic memory2, and in hard drives3 at room temperature, and their rarity has motivated many fundamental studies in materials physics at low temperatures4. Here we report the observation of an extremely large positive magnetoresistance at low temperatures in the non-magnetic layered transition-metal dichalcogenide WTe2: 452,700 per cent at 4.5 kelvins in a magnetic field of 14.7 teslas, and 13 million per cent at 0.53 kelvins in a magnetic field of 60 teslas. In contrast with other materials, there is no saturation of the magnetoresistance value even at very high applied fields. Determination of the origin and consequences of this effect, and the fabrication of thin films, nanostructures and devices based on the extremely large positive magnetoresistance of WTe2, will represent a significant new direction in the study of magnetoresistivity.