1. Synchrotron microscopy and spectroscopy for analysis of crystal defects in silicon
- Author
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Winfried Seifert, Alexei Erko, Martin Kittler, Murielle Salome, Oleg Vyvenko, Ivo Zizak, Tzanimir Arguirov, M. Trushin, and Carsten Rudolf
- Subjects
010302 applied physics ,Microprobe ,Silicon ,Chemistry ,Precipitation (chemistry) ,Analytical chemistry ,chemistry.chemical_element ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Crystallographic defect ,Synchrotron ,law.invention ,Monocrystalline silicon ,law ,0103 physical sciences ,Microscopy ,Grain boundary ,0210 nano-technology - Abstract
The paper discusses the synchrotron-based microprobe techniques XBIC (X-ray beam induced current), μ-XRF (X-ray fluorescence microscopy) and μ-XAS (X-ray absorption microspectroscopy) and their application for studying electrical activity of defects and precipitation of transition metals in Si materials. Investigations were performed on samples of block-cast multicrystalline Si and on model samples cut from a bonded monocrystalline wafer. To analyze the precipitation sites, Ni, Cu and Fe were introduced intentionally into the samples. The detected precipitates were found to consist of silicides. Evidence for metal precipitates was also found in virtually uncontaminated as-grown block-cast Si. Besides Ni precipitates detected at a recombination active grain boundary, particles containing one or several metals (Cu, Fe, Ti, V) were observed. Unexpectedly, these particles seem to exhibit low only recombination activity. Further studies are necessary to identify their nature. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
- Published
- 2009
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