1. A 5 g Inertial Micro-Switch with Enhanced Threshold Accuracy Using Squeeze-Film Damping
- Author
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Chunpeng Pan, Yingchun Peng, Cheng Lv, Tianhong Luo, and Guoguo Wu
- Subjects
inertial switch ,Work (thermodynamics) ,Fabrication ,Materials science ,Silicon ,Threshold limit value ,lcsh:Mechanical engineering and machinery ,chemistry.chemical_element ,02 engineering and technology ,01 natural sciences ,Article ,0103 physical sciences ,lcsh:TJ1-1570 ,Electrical and Electronic Engineering ,010302 applied physics ,MEMS (micro-electro-mechanical system) ,squeeze-film damping ,Mechanical Engineering ,Mechanics ,acceleration switch ,021001 nanoscience & nanotechnology ,Finite element method ,Surface micromachining ,chemistry ,Control and Systems Engineering ,Proof mass ,0210 nano-technology ,Inertial switch ,threshold accuracy - Abstract
Our previous report based on a 10 g (gravity) silicon-based inertial micro-switch showed that the contact effect between the two electrodes can be improved by squeeze-film damping. As an extended study toward its potential applications, the switch with a large proof mass suspended by four flexible serpentine springs was redesigned to achieve 5 g threshold value and enhanced threshold accuracy. The impact of the squeeze-film damping on the threshold value was theoretically studied. The theoretical results show that the threshold variation from the designed value due to fabrication errors can be reduced by optimizing the device thickness (the thickness of the proof mass and springs) and then establishing a tradeoff between the damping and elastic forces, thus improving the threshold accuracy. The design strategy was verified by FEM (finite-element-method) simulation and an experimental test. The simulation results show that the maximum threshold deviation was only 0.15 g, when the device thickness variation range was 16&ndash, 24 &mu, m, which is an adequately wide latitude for the current bulk silicon micromachining technology. The measured threshold values were 4.9&ndash, 5.8 g and the device thicknesses were 18.2&ndash, 22.5 &mu, m, agreeing well with the simulation results. The measured contact time was 50 &mu, s which is also in good agreement with our previous work.
- Published
- 2018