1. Interface-enhanced thermoelectric output power in CrN/SrTiO3− heterostructure
- Author
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Liwei Chen, Jian He, Xueying Wan, Lin Sun, Peng Jiang, Xiaowei Lu, Mingyu Chen, Qi Chen, Na Ta, Xinhe Bao, and Wei Liu
- Subjects
Materials science ,business.industry ,Energy Engineering and Power Technology ,Heterojunction ,02 engineering and technology ,Substrate (electronics) ,010402 general chemistry ,021001 nanoscience & nanotechnology ,Thermoelectric materials ,01 natural sciences ,0104 chemical sciences ,Fuel Technology ,Band bending ,Seebeck coefficient ,Thermoelectric effect ,Electrochemistry ,Optoelectronics ,Thin film ,0210 nano-technology ,business ,Energy (miscellaneous) ,Power density - Abstract
Thermoelectric devices enable direct conversion between thermal and electrical energy. Recent studies have indicated that the thin film/substrate heterostructure is effective in achieving high thermoelectric performance via decoupling the Seebeck coefficient and electrical conductivity otherwise adversely inter-dependent in homogenous bulk materials. However, the mechanism underlying the thin film/substrate heterostructure thermoelectricity remains unclear. In addition, the power output of the thin film/substrate heterostructure is limited to the nanowatt scale to date, falling short of the practical application requirement. Here, we fabricated the CrN/SrTiO3−x heterostructures with high thermoelectric output power and outstanding thermal stability. By varying the CrN film thickness and the reduction degree of SrTiO3−x substrate, the optimized power output and the power density have respectively reached 276 μW and 108 mW/cm2 for the 30 nm CrN film on a highly reduced surface of SrTiO3−x under a temperature difference of 300 K. The performance enhancement is attributed to the CrN/SrTiO3−x heterointerface, corroborated by the band bending as revealed by the scanning Kelvin probe microscopy. These results will stimulate further research efforts towards interface thermoelectrics.
- Published
- 2022