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The recent realisations of hydrogen doped $Ln$FeAsO ($Ln$=Nd and Sm) superconducting epitaxial thin films call for further investigation of their structural and electrical transport properties. Here, we report on the microstructure of a NdFeAs(O,H) epitaxial thin film and its temperature, field, and orientation dependencies of the resistivity and the critical current density $J_{\rm c}$. The superconducting transition temperature $T_{\rm c}$ is comparable to NdFeAs(O,F). Transmission electron microscopy investigation supported that hydrogen is homogenously substituted for oxygen. A high self-field $J_{\rm c}$ of over 10 MA/cm$^2$ was recorded at 5 K, which is likely to be caused by a short London penetration depth. The anisotropic Ginzburg-Landau scaling for the angle dependence of $J_{\rm c}$ yielded temperature-dependent scaling parameters $\gamma_{\rm J}$ that decreased from 1.6 at 30 K to 1.3 at 5 K. This is opposite to the behaviour of NdFeAs(O,F). Additionally, $\gamma_{\rm J}$ of NdFeAs(O,H) is smaller than that of NdFeAs(O,F). Our results indicate that heavily electron doping by means of hydrogen substitution for oxygen in $Ln$FeAsO is highly beneficial for achieving high $J_{\rm c}$ with low anisotropy without compromising $T_{\rm c}$, which is favourable for high-field magnet applications., Comment: 17 pages, 6 figures with Supplementary Information, accepted in Scientific Reports

The iron-based superconductor ${\mathrm{Ba}}_{1\ensuremath{-}x}{\mathrm{K}}_{x}{\mathrm{Fe}}_{2}{\mathrm{As}}_{2}$ is emerging as a key material for high magnetic field applications owing to the recent developments in superconducting wires and bulk permanent magnets. Epitaxial thin films play important roles in investigating and artificially tuning physical properties; nevertheless, the synthesis of ${\mathrm{Ba}}_{1\ensuremath{-}x}{\mathrm{K}}_{x}{\mathrm{Fe}}_{2}{\mathrm{As}}_{2}$ epitaxial thin films remained challenging because of the high volatility of K. Herein, we report the successful growth of epitaxial ${\mathrm{Ba}}_{1\ensuremath{-}x}{\mathrm{K}}_{x}{\mathrm{Fe}}_{2}{\mathrm{As}}_{2}$ thin films by molecular-beam epitaxy with employing a combination of fluoride substrates $({\mathrm{CaF}}_{2},$ ${\mathrm{SrF}}_{2}, \mathrm{and} {\mathrm{BaF}}_{2})$ and a low growth temperature (350--420 \ifmmode^\circ\else\textdegree\fi{}C). Our epitaxial thin film grown on ${\mathrm{CaF}}_{2}$ showed sharp superconducting transition at an onset critical temperature of 36 K, slightly lower than bulk crystals by \ensuremath{\sim}2 K due presumably to the strain effect arising from the lattice and thermal expansion mismatch. Critical current density $({J}_{\mathrm{c}})$ determined by the magnetization hysteresis loop is as high as $2.2\phantom{\rule{0.28em}{0ex}}\mathrm{MA}/\mathrm{c}{\mathrm{m}}^{2}$ at 4 K under self-field. In-field ${J}_{\mathrm{c}}$ characteristics of the film are superior to the bulk crystals. The realization of epitaxial thin films opens opportunities for tuning superconducting properties by epitaxial strain and revealing intrinsic grain boundary transport of ${\mathrm{Ba}}_{1\ensuremath{-}x}{\mathrm{K}}_{x}{\mathrm{Fe}}_{2}{\mathrm{As}}_{2}$.

The electric transport properties of a GdBa2Cu3O 7 − δ thin film containing 12 mol% nano-sized BaHfO3 (BHO) particles grown by chemical solution deposition were investigated in a wide range of temperatures (4.2 ≤T ≤ 77 K) and magnetic fields up to μ 0 H = 19 T. The exponent n of the electric field–current density characteristics ( E ∝ J n ) depends on critical current density J c as (n–1) ∝ J c α (α ∼ 0.45) irrespective of measurement temperature for H ∥ c. On the other hand, this relation does not hold for H ∥ ab. The angular dependence of J c is almost similar to that of n except for the angle close to the ab-plane. A dip of n around this angle regime was observed below 77 K, whereas J c exhibited a maximum. At T ≤ 50 K a tiny peak in the dip was observed that increases with decreasing temperatures. These results suggest that the pinning mechanism changes with temperature for H ∥ ab.

We have grown thin films of CaAgAs by molecular beam epitaxy, which was theoretically proposed to be a topological insulator. The temperature dependence of resistivity and the carrier concentration at 4 K were similar to the reported results of bulk samples. However, the magnetoresistance exhibited a steep increase at low magnetic fields, a behavior not observed for bulk samples. This steep increase of resistivity is ascribable to the weak antilocalization effect and provides clues to the nature of the topological surface state of CaAgAs.

The discovery of iron-based superconductors paved the way for advanced possible applications, mostly in high magnetic fields, but also in electronics. Among superconductive devices, nanowire detectors have raised a large interest in recent years, due to their ability to detect a single photon in the visible and infrared (IR) spectral region. Although not yet optimal for single-photon detection, iron-based superconducting nanowire detectors would bring clear advantages due to their high operating temperature, also possibly profiting of other peculiar material properties. However, there are several challenges yet to be overcome, regarding mainly: fabrication of ultra-thin films, appropriate passivation techniques, optimization of nano-patterning, and high-quality electrical contacts. Test nanowire structures, made by ultra-thin films of Co-doped BaFe2As2, have been fabricated and characterized in their transport and intrinsic noise properties. The results on the realized nanostructures show good properties in terms of material resistivity and critical current. Details on the fabrication and low temperature characterization of the realized nanodevices are presented, together with a study of possible degradation phenomena induced by ageing effects.

NdFeAs(O,F) thin films having different fluorine contents were grown on 5 deg. or 10 deg. vicinal cut MgO and CaF2 single crystalline substrates by molecular beam epitaxy. Structural characterisations by reflection high-energy electron diffraction and x-ray diffraction confirmed the epitaxial growth of NdFeAs(O,F). The resistivities of the ab-plane and along the c-axis were derived from the resistivity measurements in the longitudinal and transversal directions. The c-axis resistivity was always higher than the ab-plane resistivity, resulting from the anisotropic electronic structure. The resistivity anisotropy at 300 K was almost constant in the range of 50-90 irrespective of the F content. On the other hand, the resistivity anisotropy at 56 K showed a strong fluorine dependence: the resistivity anisotropy was over 200 for the films with optimum F contents (superconducting transition temperature Tc around 50 K), whereas the resistivity anisotropy was around 70 for the films in the under-doped regime (Tc between 35 and 45 K). The mass anisotropy are the effective masses along the c-axis and on the ab-plane) close to Tc derived from the anisotropic Ginzburg-Landau approach using the angular-dependency of the ab-plane resistivity was in the range from 2 to 5. On the assumption that the square of the mass anisotropy is equal to the resistivity anisotropy, those values are small compared to the normal state anisotropy.

Superconductivity (SC) in the Ba-122 family of iron-based compounds can be controlled by aliovalent or isovalent substitutions, applied external pressure, and strain, the combined effects of which are sometimes studied within the same sample. Most often, the result is limited to a shift of the SC dome to different doping values. In a few cases, the maximum SC transition at optimal doping can also be enhanced. In this work, we study the combination of charge doping together with isovalent P substitution and strain by performing ionic gating experiments on ${\mathrm{BaFe}}_{2}$(${\mathrm{As}}_{0.8}{\mathrm{P}}_{0.2}$)${}_{2}$ ultrathin films. We show that the polarization of the ionic gate induces modulations to the normal-state transport properties that can be mainly ascribed to surface charge doping. We demonstrate that ionic gating can only shift the system away from the optimal conditions, as the SC transition temperature is suppressed by both electron and hole doping. We also observe a broadening of the resistive transition, which suggests that the SC order parameter is modulated nonhomogeneously across the film thickness, in contrast with earlier reports on charge-doped standard BCS superconductors and cuprates.

An epitaxial NdFeAs(O,F) thin film of 90 nm thickness grown by molecular beam epitaxy on MgO single crystal with Tc = 44.2 K has been investigated regarding a possible vortex glass-liquid tran-sition. The voltage-current characteristics show excellent scalability according to the vortex-glass model with a static critical exponent {\nu} of around 1.35 and a temperature-dependent dynamic exponent z increasing from 7.8 to 9.0 for the investigated temperature range. The large and non-constant z values are discussed in the frame of 3D vortex glass, thermally activated flux motion, and inhomogeneity broadening., Comment: 20 pages, 4 figures

The possibility of p-wave pairing in superconductors has been proposed more than five decades ago, but has not yet been convincingly demonstrated. One difficulty is that some p-wave states are thermodynamically indistinguishable from s-wave, while others are very similar to d-wave states. Here we studied the self-field critical current of NdFeAs(O,F) thin films in order to extract absolute values of the London penetration depth, the superconducting energy gap, and the relative jump in specific heat at the superconducting transition temperature, and find that all the deduced physical parameters strongly indicate that NdFeAs(O,F) is a bulk p-wave superconductor. Further investigation revealed that single atomic layer FeSe also shows p-wave pairing. In an attempt to generalize these findings, we re-examined the whole inventory of superfluid density measurements in iron-based superconductors show quite generally that most of the iron-based superconductors are p-wave superconductors., Comment: 35 pages, 15 figures

Submicron sized strip lines of NdFeAs(O,F) were fabricated and the transport properties were studied. By using laser lithography and dry etching, strip lines with a width of down to 0.84 μm were fabricated. The superconducting critical temperature (T c) was not seriously affected by the fabrication process, but a significant decrease of the critical current density (J c) was observed for strip lines narrower than 2 μm when the sample was patterned by isotropic etching. By employing an anisotropic etching process, on the other hand, the deterioration of J c was largely prevented, and the yield of obtaining a strip line with J c higher than 5 MA/cm2 rose considerably.

Understanding the nature of grain boundary (GB) characteristics in combination with creating low-energy GBs by modifying the processing conditions, so-called GB engineering, is of great importance for controlling and reducing the defect density, leading to improved functionalities of polycrystalline metals and ceramics. For superconductors particularly, including both low- and high-temperature superconductors, GB engineering has been developed to improve especially the critical current densities, Jc, across these GBs. The intrinsic physical properties of a given superconductor such as the coherence length, the order parameter symmetry, and their anisotropies would determine the strategy of GB engineering. In this topical review, we present an overview of the GB characteristics and GB engineering of Fe-based superconductors (FBS) in the form of polycrystalline bulks and wires, and thin films with application potential, e.g. for high-field magnet wires. Prior to the FBS, GB engineering of the cuprates and MgB2 are also briefly covered., Invited review

We found a large and unique magnetoresistance (MR) effect for ${\mathrm{CaMn}}_{2}{\mathrm{Bi}}_{2}$. When the magnetic field was applied along the crystallographic $c$ axis at low temperatures, the resistivity increased with the magnetic field and the MR ratio reached several hundred percent, but then it decreased with further increasing the applied field. In addition, the angle dependence measurement revealed a strong anisotropy. This compound is an antiferromagnetic semiconductor with a narrow band gap, and Mn atoms form a corrugated honeycomb lattice. Therefore, a frustration among the magnetic moments is expected, and we propose that our observations can be understood by a nonmonotonic modulation of magnetic fluctuation under the magnetic field.

The discovery of Fe-based superconductors (FBS) as the second class of high-temperature superconducting transition (high-Tc) materials after the cuprates generated a significant impact on the community of fundamental and applied superconductivity research. Whenever a new class of high-Tc superconducting materials is discovered, a lot of effort is devoted to growing single crystals and epitaxial thin films for exploring basic physical quantities. Although several properties of FBS are similar to the cuprates (large upper critical fields, resulting from a short coherence lengths, and small carrier density), others are distinctly different. For instance, in FBS the symmetry of the superconducting order parameter is most likely not a d-wave but an s+-wave, depending on the stoichiometry, crystallographic system, and doping level. Additionally, the critical current densities of FBS are less sensitive to the presence of grain boundaries (GBs) than those of the high-Tc cuprates. These features are highly beneficial for the realization of cheaper conductors for high-field magnets at low temperatures. Indeed, several groups have demonstrated FBS thin films on technical metallic substrates and powder-in-tube processed FBS wires as proof-of-principle studies for conductor applications. FBS on technical substrates also give many opportunities for studying how GB networks affect the critical current and how uniaxial strain impacts the superconducting properties. In this article, we review FBS thin films, especially on technical metallic substrates, and focus on application-relevant properties like pinning improvement by natural and artificial defects as well as the transparency of GBs and GB networks. The recent development of FBS thin films on technical substrates and their superconducting properties are presented and the performance gap with respect to films on single crystals is discussed., Comment: Figures and some of the tables are placed at the end of document

Nanowires of Co-doped BaFe 2 As 2 have been realized and characterized. Thin films having thickness of 20 nm were grown on CaF 2 (100) substrates by pulsed laser deposition. The films were then passivated in situ with a thin layer of MgAl 2 O 4 . Using electron beam lithography, several submicron nanowire structures were patterned and electrically contacted to gold pads. The nanostructures have a superconducting critical temperature T of 16 K, for a 500-nm-wide nanowire, and properties, in terms of normal state resistivity (0.3 mΩ·cm) and critical current (1 MA/cm 2 at 3 K), comparable with those of NbN nanowires. Moreover, they show localization effects in the normal state, while the current-voltage characteristics are dominated by flux creep.

The physical properties of $\mathrm{M}{\mathrm{n}}_{3}\mathrm{CuN}$ were studied using thin films. We found that an annealing process was very effective to improve the film quality, the key of which was the use of Ti that prevented the formation of oxide impurities. Using these high-quality thin films, we found strong strain dependence for the ferromagnetic transition temperature (${T}_{C}$) and a sign change of the Hall coefficient at ${T}_{C}$. The analysis of Hall coefficient data revealed a sizable decrease of hole concentration and a large increase of electron mobility below ${T}_{C}$, which is discussed in relation to the electronic structure of this material.

Superconducting FeSe films were electrochemically deposited on rolling-assisted biaxially textured substrate (RABiTS) tape. We observed zero resistivity in the as-electrodeposited FeSe film prepared on the RABiTS when the appropriate voltage was applied while it was dipped into the solution. When the RABiTS tape was dipped in the solution without applying voltage, a thin Se film was deposited on the substrate. The compositional ratio of the FeSe film got closer to the stoichiometric ratio with decreasing the dipping time before applying voltage.

We report on the growth of NdFeAs(O,F) thin films on [001]-tilt MgO bicrystal substrates with misorientation angle theta_GB=6{\deg}, 12{\deg}, 24{\deg} and 45{\deg}, and their inter- and intra-grain transport properties. X-ray diffraction study confirmed that all our NdFeAs(O,F) films are epitaxially grown on the MgO bicrystals. The theta_GB dependence of the inter-grain critical current density Jc shows that, unlike Co-doped BaFe2As2 and Fe(Se,Te), its decay with theta_GB is rather significant. As a possible reason of this result, fluorine may have diffused preferentially to the grain boundary region and eroded the crystal structure., Comment: Proceedings of the 30th International Symposium on Superconductivity, 7 figures. Accepted for publication

We report on electrical transport properties of epitaxial Ba(Fe1-xNix)2As2 thin films grown by pulsed laser deposition in static magnetic fields up to 35 T. The thin film shows a critical temperature of 17.2 K and a critical current density of 5.7x10^5 A/cm^2 in self field at 4.2 K while the pinning is dominated by elastic pinning at two-dimensional nonmagnetic defects. Compared to single-crystal data, we find a higher slope of the upper critical field for the thin film at a similar doping level and a small anisotropy. Also an unusual small vortex liquid phase was observed at low temperatures, which is a striking difference to Co-doped BaFe2As2 thin films., Comment: Accepted for publication in Applied Physics Letters, 5 figures

Surface properties of Co-doped BaFe 2 As 2 (Ba-122) thin films prepared by pulsed laser deposition on MgO with Fe buffer layer and CaF 2 substrates were inspected by atomic force microscopy, scanning spreading resistance microscopy, scanning tunneling microscopy, X-ray photoelectron spectroscopy, auger electron spectroscopy/microscopy and point contact spectroscopy (PCS). Selected PCS spectra were fitted by extended 1D BTK model. The measurements were done on as-received as well as ion beam etched surfaces. Our results show that the substrate is considerably influencing the surface properties of the films, particularly the topography and surface conductivity distribution, what can affect results obtained by surface-sensitive techniques like PCS.

We have systematically investigated the grain boundary (GB) angle dependence of transport properties for NdFeAs(O,F) fabricated on [001]-tilt symmetric MgO bicrystal substrates. In our previous study, NdFeAs(O,F) bicrystal films showed a weak-link behaviour even at a GB angle of 6{\deg}. However, this was caused by an extrinsic effect originating from the damage to both NdFeAs(O,F) and MgO substrate by excess F-diffusion along the grain boundary. To investigate the intrinsic nature of grain boundaries, we minimized the damage to NdFeAs(O,F) and MgO by reducing the deposition temperature of NdOF over-layer needed for F-doping. The resultant NdFeAs(O,F) bicrystal films have a critical angle of 8.5{\deg}, above which Jc starts to decrease exponentially. This critical angle is almost the same as those of other Fe-based superconductors., Comment: Accepted in Superconductor Science and Technology

To apply tensile or compressive uniaxial strain to functional thin films, we propose a novel approach in combining a piezoelectric-based device and a technical metallic substrate used widely in second generation coated conductors (i.e. superconducting tapes). A strain-induced shift of the superconducting transition temperature of 0.1 K for Co-doped BaFe2As2 was observed along the [100] direction, corresponding to a uniaxial pressure derivative dT c/dp 100 = −4 K/GPa. For Mn3CuN, a uniaxial strain derivative along the [100] direction of the Curie temperature dTC/depsilon 100 = 13 K/% was observed. The current approach is applicable to various functional thin films in a wide range of temperatures., ファイル公開：2020-01-04

In this work we present multilayers consisting of Fe and Co-doped BaFe 2 As 2 fabricated by UHV pulsed laser deposition. Employing the advantage of a coherent interfacial bonding between the FeAs tetrahedra of the iron pnictide and bcc Fe enables the growth of epitaxial bi- and multilayers of Fe and the new Fe-based superconductors with high crystalline quality. Epitaxial growth of the multilayers was controlled in situ by reflection high energy electron diffraction (RHEED) and after film growth by X-ray diffraction and TEM analysis. The stoichiometry determined by Auger electron spectroscopy (AES) indicated As-deficient layers of Co-doped Ba-122. The multilayers exhibit critical temperatures of T c,90 = 29 K which is so far the highest critical temperature reported for Co-doped Ba-122. We propose that the T c -enhancement is caused by As-vacancies.

We report on the systematic characterization of Ba(Fe$_{0.92}$Co$_{0.08}$)$_2$As$_2$ epitaxial thin films on CaF$_2$ substrate in view of their possible use for superconducting electronic applications. By using different and complementary techniques we studied the morphological characteristics of the surface, the structural properties, the magnetic response, and the superconducting properties in terms of critical temperature, critical current, and energy gaps. Particular attention was paid to the homogeneity of the films and to the comparison of their superconducting properties with those of single crystals of the same compound., 19 pages, 7 figures. Preprint version

The Hall effect is a powerful tool for investigating carrier type and density. For single-band materials, the Hall coefficient is traditionally expressed simply by $R_H^{-1} = -en$, where $e$ is the charge of the carrier, and $n$ is the concentration. However, it is well known that in the critical region near a quantum phase transition, as it was demonstrated for cuprates and heavy fermions, the Hall coefficient exhibits strong temperature and doping dependencies, which can not be described by such a simple expression, and the interpretation of the Hall coefficient for Fe-based superconductors is also problematic. Here, we investigate thin films of Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$ with compressive and tensile in-plane strain in a wide range of Co doping. Such in-plane strain changes the band structure of the compounds, resulting in various shifts of the whole phase diagram as a function of Co doping. We show that the resultant phase diagrams for different strain states can be mapped onto a single phase diagram with the Hall number. This universal plot is attributed to the critical fluctuations in multiband systems near the antiferromagnetic transition, which may suggest a direct link between magnetic and superconducting properties in the BaFe$_2$As$_2$ system., Comment: Accepted for publication in Scientific Reports, 6 main figures plus Supplemental Information (8 figures)

The Fe-based superconductors (FBS) present a large variety of compounds whose properties are affected to different extents by their crystal structures. Amongst them, the $\it{RE}$FeAs(O,F) ($\it{RE}$1111, where $\it{RE}$ is a rare earth element) is the family with the highest critical temperature $T_c$ but also with a large anisotropy and Josephson vortices as demonstrated in the flux-flow regime in Sm1111 ($T_c$ $\sim$ 55 K). Here we focus our attention on the pinning properties of the lower-$T_c$ Nd1111 in the flux-creep regime. We demonstrate that for H//c critical current density $J_c$ at high temperatures is dominated by point-defect pinning centres, whereas at low temperatures surface pinning by planar defects parallel to the $\it{c}$-axis and vortex shearing prevail. When the field approaches the $\it{ab}$-planes, two different regimes are observed at low temperatures as a consequence of the transition between 3D-Abrikosov and 2D-Josephson vortices: one is determined by the formation of a vortex staircase structure and one by lock-in of the vortices parallel to the layers. This is the first study on FBS showing this behaviour in a full temperature, field, and angular range and it demonstrates that, despite the lower $T_c$ and anisotropy of Nd1111 with respect to Sm1111, this compound is substantially affected by intrinsic pinning generating a strong $\it{ab}$-peak in $J_c$., Comment: Final version available on Scientific Reports (Open access)

The effect of $\alpha$-particle irradiation on a NdFeAs(O,F) thin film has been investigated to determine how the introduction of defects affects basic superconducting properties, including the critical temperature $T_c$ and the upper critical field $H_{c2}$, and properties more of interest for applications, like the critical current density $J_c$ and the related pinning landscape. The irradiation-induced suppression of the film $T_c$ is significantly smaller than on a similarly damaged single crystal. Moreover $H_{c2}$ behaves differently, depending on the field orientation: for H//c the $H_{c2}$ slope monotonically increases with increasing disorder, whereas for H//ab it remains constant at low dose and it increases only when the sample is highly disordered. This suggests that a much higher damage level is necessary to drive the NdFeAs(O,F) thin film into the dirty limit. Despite the increase in the low temperature $H_{c2}$, the effects on the $J_c$(H//c) performances are moderate in the measured temperature and field ranges, with a shifting of the pinning force maximum from 4.5 T to 6 T after an irradiation of $2\times10^{15} cm^{-2}$. On the contrary, $J_c$(H//ab) is always suppressed. The analysis demonstrates that irradiation does introduce point defects acting as pinning centres proportionally to the irradiation fluence but also suppresses the effectiveness of c-axis correlated pinning present in the pristine sample. We estimate that significant performance improvements may be possible at high field or at temperatures below 10 K. The suppression of the $J_c$(H//ab) performance is not related to a decrease of the $J_c$ anisotropy as found in other superconductors. Instead it is due to the presence of point defects that decrease the efficiency of the ab-plane intrinsic pinning typical of materials with a layered structure., Comment: 12 pages, 9 figures

Consecutive proton irradiation of iron pnictides reduces the superconducting transition temperature to decrease monotonically. Our systematic optical THz investigations of Ba(Fe$_{0.9}$Co$_{0.1}$)$_2$As$_2$ thin films reveal, however, that the low-energy superconducting gap is first suppressed, but recovers for higher irradiation doses. At the same time the decrease of the superfluid density with disorder comes to a halt. These observations are in excellent agreement with theoretical calculations, which predict a disorder-induced transition of the order parameter from $s_{\pm}$ to $s_{++}$ symmetry. Thereby we solve the longstanding puzzle of the iron pnictides gap symmetry in favor of $s_{\pm}$-symmetry and demonstrate THz spectroscopy as a tool to determine the symmetry of the superconducting order parameter.

FeSe0.5Te0.5 thin films were grown by pulsed laser deposition on CaF2, LaAlO3 and MgO substrates and structurally and electro-magnetically characterized in order to study the influence of the substrate on their transport properties. The in-plane lattice mismatch between FeSe0.5Te0.5 bulk and the substrates shows no influence on the lattice parameters of the films, whereas the type of substrates affects the crystalline quality of the films and, therefore, the superconducting properties. The film on MgO showed an extra peak in the angular dependence of critical current density Jc({\theta}) at {\theta} = 180{\deg} (H || c), which arises from c-axis defects as confirmed by transmission electron microscopy. In contrast, no Jc({\theta}) peaks for H || c were observed in films on CaF2 and LaAlO3. Jc({\theta}) can be scaled successfully for both films without c-axis correlated defects by the anisotropic Ginzburg-Landau (AGL) approach with appropriate anisotropy ratio {\gamma}J. The scaling parameter {\gamma}J is decreasing with decreasing temperature, which is different from what we observed in FeSe0.5Te0.5 films on Fe-buffered MgO substrates., Comment: accepted for publication in SUST

A systematic characterization of Co-doped BaFe2As2(Ba-122) thin films has been carried out. Two samples were available, one grown on CaF2substrate and the other on MgO with an Fe buffer layer. The goal was to investigate films’ magnetic and superconducting properties, their reciprocal interplay, and the role played by the Fe buffer layer in modifying them. Morphological characterization and Energy Dispersive X-ray analyses on the Fe-buffered sample demonstrate the presence of diffused Fe close to the Co-doped Ba-122 outer surface as well as irregular holes in the overlying superconducting film. These results account for hysteresis loops obtained with magneto-optic Kerr effect measurements and observed at both room and low temperatures. The magnetic pattern was visualized by magneto-optical imaging with an indicator film. Moreover, we investigated the onset of superconductivity through a measure of the superconducting energy gap. The latter is strictly related to the decay time of the excitation produced by an ultrashort laser pulse and has been determined in a pump-probe transient reflectivity experiment. A comparison of results relative to Co-doped Ba-122 thin films with and without Fe buffer layer is finally reported.

FeSe film is successfully fabricated onto Rolling Assisted Biaxially Textured Substrate (RABiTS) tapes by an electrochemical deposition technique. The deposited FeSe films tend to become high crystallinity with a decrease in the applied voltage to -1.0 V, and the compositional ratio of Fe to Se approaches 1:1. The sample deposited at -1.0 V shows a superconducting transition approximately 8.0 K in the magnetic susceptibility., 10 pages, 1 figure

We report on the growth of epitaxial Fe1+δ Se0.5Te0.5 thin films on 0°, 5°, 10°, 15° and 20° vicinal cut CaF2 single crystals by pulsed laser deposition. In situ electron and ex situ x-ray diffraction studies reveal a tilted growth of the Fe1+δ Se0.5Te0.5 films, whereby under optimized deposition conditions the c-axis alignment coincides with the substrate [001] tilted axis up to a vicinal angle of 10°. Atomic force microscopy shows a flat island growth for all films. From resistivity measurements in longitudinal and transversal directions, the ab- and c-axis components of resistivity are derived and the mass anisotropy parameter is determined. Analysis of the critical current density indicates that no effective c-axis correlated defects are generated by vicinal growth, and pinning by normal point core defects dominates. However, for Hab the effective pinning centers change from surface defects to point core defects near the superconducting transition due to the vicinal cut. Furthermore, we show in angular-dependent critical current density data a shift of the ab-planes maxima position with the magnetic field strength.

A detailed characterization of the voltage-noise properties has been performed in FeTe0.5Se0.5 epitaxial thin films and Co-doped BaFe2As2 bilayers, deposited by pulsed laser deposition. In all the samples analyzed, the experimental voltage-spectral density has a 1/f noise component. Different behaviors are observed for the bias current and temperature dependencies of this 1/f noise, and are related to specific structural and electric transport properties of the two materials.

Angle-resolved transport measurements revealed that planar defects dominate flux pinning in the investigated Co-doped BaFe2As2 thin film. For any given field and temperature, the critical current depends only on the angle between the crystallographic c-axis and the applied magnetic field but not on the angle between the current and the field. The critical current is therefore limited only by the in-plane component of the Lorentz force but independent of the out-of-plane component, which is entirely balanced by the pinning force exerted by the planar defects. This one-dimensional pinning behavior shows similarities and differences to intrinsic pinning in layered superconductors., Comment: 8 pages, 6 figures

The discovery of superconductivity (SC) with a transition temperature, Tc, up to 65K in single-layer FeSe (bulk Tc =8K) films grown on SrTiO3 substrates has attracted special attention to Fe-based thin films. The high Tc is a consequence of the combined effect of electron transfer from the oxygen-vacant substrate to the FeSe thin film and lattice tensile strain. Here we demonstrate the realization of SC in the parent compound BaFe2As2 (no bulk Tc) just by tensile lattice strain without charge doping. We investigate the interplay between strain and SC in epitaxial BaFe2As2 thin films on Fe-buffered MgAl2O4 single crystalline substrates. The strong interfacial bonding between Fe and the FeAs sublattice increases the Fe-Fe distance due to the lattice misfit which leads to a suppression of the antiferromagnetic spin density wave and induces SC with bulk-Tc ?10K. These results highlight the role of structural changes in controlling the phase diagram of Fe-based superconductors., http://www.nature.com/ncomms/2013/131206/ncomms3877/full/ncomms3877.html

The dependence of the superconducting gaps in epitaxial Ba(Fe${}_{1\ensuremath{-}x}$Co${}_{x}$)${}_{2}$As${}_{2}$ thin films on the nominal doping $x$ ($0.04\ensuremath{\leqslant}x\ensuremath{\leqslant}0.15$) was studied by means of point-contact Andreev-reflection spectroscopy. The normalized conductance curves were well fitted by using the two-dimensional Blonder-Tinkham-Klapwijk model with two nodeless, isotropic gaps---although the possible presence of gap anisotropies cannot be completely excluded. The amplitudes of the two gaps ${\ensuremath{\Delta}}_{\mathrm{S}}$ and ${\ensuremath{\Delta}}_{\mathrm{L}}$ show similar monotonic trends as a function of the local critical temperature ${T}_{\mathrm{c}}^{\mathrm{A}}$ (measured in the same point contacts) from 25 K down to 8 K. The dependence of the gaps on $x$ is well correlated to the trend of the critical temperature, i.e., to the shape of the superconducting region in the phase diagram. When analyzed within a simple three-band Eliashberg model, this trend turns out to be compatible with a mechanism of superconducting coupling mediated by spin fluctuations, whose characteristic energy scales with ${T}_{\mathrm{c}}$ according to the empirical law ${\ensuremath{\Omega}}_{0}=4.65{k}_{\mathrm{B}}{T}_{\mathrm{c}}$, and with a total electron-boson coupling strength ${\ensuremath{\lambda}}_{\mathrm{tot}}=2.22$ for $x\ensuremath{\leqslant}0.10$ (i.e., up to optimal doping) that slightly decreases to ${\ensuremath{\lambda}}_{\mathrm{tot}}=1.82$ in the overdoped samples ($x=0.15$).

The recently discovered oxypnictide superconductor SmFeAs(O,F) is the most attractive material among the Fe-based superconductors due to its highest transition temperature of 56 K and potential for high-field performance. In order to exploit this new material for superconducting applications, the knowledge and understanding of its electro-magnetic properties are needed. Recent success in fabricating epitaxial SmFeAs(O,F) thin films opens a great opportunity to explore their transport properties. Here we report on a high critical current density of over 105 A/cm2 at 45 T and 4.2 K for both main field orientations, feature favourable for high-field magnet applications. Additionally, by investigating the pinning properties, we observed a dimensional crossover between the superconducting coherence length and the FeAs interlayer distance at 30–40 K, indicative of a possible intrinsic Josephson junction in SmFeAs(O,F) at low temperatures that can be employed in electronics applications such as a terahertz radiation source and a superconducting Qubit.

We report on the transport properties of clean, epitaxial Fe(Se,Te) thin films prepared on Fe-buffered MgO (001) single crystalline substrates by pulsed laser deposition. Near Tc a steep slope of the upper critical field for H||ab was observed (74.1 T/K), leading to a very short out-of-plane coherence length, \xi c, of 0.2 nm, yielding 2\xi c(0) approximately 0.4 nm. This value is shorter than the interlayer distance (0.605 nm) between Fe-Se(Te) planes, indicative of modulation of the superconducting order parameter along the c-axis. An inverse correlation between the power law exponent N of the electric field-current density (E-J) curve and the critical current density, Jc, has been observed at 4 K, when the orientation of H was close to the ab-plane. These results prove the presence of intrinsic pinning in Fe(Se,Te). A successful scaling of the angular dependent Jc and the corresponding exponent N can be realized by the anisotropic Ginzburg Landau approach with appropriate \Gamma values 2~3.5. The temperature dependence of \Gamma behaves almost identically to that of the penetration depth anisotropy., Comment: 8 figures

Surface properties of Co-doped BaFe2As2 epitaxial superconducting thin films were inspected by X-ray photoelectron spectroscopy, scanning spreading resistance microscopy (SSRM), and point contact spectroscopy (PCS). It has been shown that surface of Fe-based superconductors degrades rapidly if being exposed to air, what results in suppression of gap-like structure on PCS spectra. Moreover, SSRM measurements revealed inhomogeneous surface conductivity, what is consistent with strong dependence of PCS spectra on contact position. Presented results suggest that fresh surface and small probing area should be assured for surface sensitive measurements like PCS to obtain intrinsic properties of Fe-based superconductors., Comment: 4 pages, 4 figures

We report on the results of directional point-contact Andreev-reflection (PCAR) measurements in Ba(Fe_{1-x}Co_x)2As2 single crystals and epitaxial c-axis oriented films with x = 0.08 as well as in Ca(Fe_{1-x}Co_x)2As2 single crystals with x = 0.06. The PCAR spectra are analyzed within the two-band 3D version of the Blonder-Tinkham-Klapwijk model for Andreev reflection we recently developed, and that makes use of an analytical expression for the Fermi surface that mimics the one calculated within the density-functional theory (DFT). The spectra in Ca(Fe_{0.94}Co_{0.06})2As2 unambiguously demonstrate the presence of nodes or zeros in the small gap. In Ba(Fe_{0.92}Co_{0.08})2As2, the ab-plane spectra in single crystals can be fitted by assuming two nodeless gaps, but this model fails to fit the c-axis ones in epitaxial films. All these results are discussed in comparison with recent theoretical predictions about the occurrence of accidental 3D nodes and the presence of "hot spots" in the gaps of 122 compounds., 7 pages, 4 figures. Journal of Superconductivity and Novel Magnetism, in press

Superconducting and normal state transport properties in iron pnictides are sensitive to disorder and impurity scattering. By investigation of Ba(Fe1-xCox)2As2 thin films with varying Co concentration, we demonstrate that in the dirty limit the superconducting dome in the electronic phase diagram of Ba(Fe1-xCox)2As2 shifts towards lower doping concentrations, which differs significantly from observations in single crystals. We show that especially in the underdoped regime superconducting transition temperatures higher than 27 K are possible., Comment: 7 pages, 7 figures

A low and almost temperature independent resistance in the normal state and an anomalous peak effect within the normal-superconducting transition have been observed in BaFe1.8Co0.2As2/Fe bilayers, prepared on ion beam assisted deposition-MgO/Y2O3 buffered technical substrates. A resistor network array sufficiently reproduces this effect, assuming an increase of the electrical conductance between tape and film with decreasing buffer layer thickness. Based on this model, we evaluated the influence of this effect on the critical current density and successfully reconstructed the superconducting transition of the bilayer.

We have investigated the influence of the superconducting layer thickness, d, on the structural and transport properties of Co-doped BaFe2As2 films deposited on Fe-buffered MgO substrates by pulsed laser deposition. The superconducting transition temperature and the texture quality of Co-doped BaFe2As2 films improve with increasing d due to a gradual relief of the tensile strain. For d>90 nm an additional 110 textured component of Co-doped BaFe2As2 was observed, which leads to an upward shift in the angular dependent critical current density at H // c. These results indicate that the grain boundaries created by the 110 textured component may contribute to the c-axis pinning., 6 figures

We have measured the complex dynamical conductivity, $\ensuremath{\sigma}={\ensuremath{\sigma}}_{1}+i{\ensuremath{\sigma}}_{2}$, of superconducting $\text{Ba}{({\text{Fe}}_{0.9}{\text{Co}}_{0.1})}_{2}{\text{As}}_{2}$ $({T}_{c}=22\text{ }\text{K})$ at terahertz frequencies and temperatures 2--30 K. In the frequency dependence of ${\ensuremath{\sigma}}_{1}$ below ${T}_{c}$, we observe clear signatures of the superconducting energy gap opening. The temperature dependence of ${\ensuremath{\sigma}}_{1}$ demonstrates a pronounced coherence peak at frequencies below $15\text{ }{\text{cm}}^{\ensuremath{-}1}$ (1.8 meV). The temperature dependence of the penetration depth, calculated from ${\ensuremath{\sigma}}_{2}$, shows power-law behavior at the lowest temperatures. Analysis of the conductivity data with a two-gap model, gives the smaller isotropic $s$-wave gap of ${\ensuremath{\Delta}}_{A}=3\text{ }\text{meV}$, while the larger gap is highly anisotropic with possible nodes and its rms amplitude is ${\ensuremath{\Delta}}_{0}=8\text{ }\text{meV}$. Overall, our results are consistent with a two-band superconductor with an ${s}_{\ifmmode\pm\else\textpm\fi{}}$ gap symmetry.

To investigate the superconducting properties of iron pnictides we prepared planar hybrid SNS' junctions in thin film technology with a pnictide base electrode, a gold barrier layer and a lead counter electrode. Our design allows characterization of the electrodes and the junction independently in a 4-probe method. We show how both electrodes influence the measured spectra due to their spreading resistance. While the Pb electrode has a constant resistance above its $T_c$, the contribution of the pnictide electrode is clearly current-dependent and thus it needs a more advanced method to be corrected. We present an empirical method, which is simple to apply and allows to deal with the spreading resistance in our junctions to recalculate the actual conductance and voltage of one junction at given temperature.

We tested oxidized titanium layers as barriers for hybrid Josephson junctions with high IcRn-products and for the preparation of junctions for tunneling spectroscopy. For that we firstly prepared junctions with conventional superconductor electrodes, such as lead and niobium, respectively. By tuning the barrier thickness, we were able to change the junction's behavior from a Josephson junction to tunnel-like behavior applicable for quasi-particle spectroscopy. Subsequently, we transferred the technology to junctions using Co-doped BaFe2As2 thin films prepared by pulsed laser deposition as base electrode and evaporated Pb as counter electrode. For barriers with a thickness of 1.5 nm, we observe clear Josephson effects with IcRn≈90 μV at 4.2 K. These junctions behave SNS'-like (SNS: superconductor-normal conductor-superconductor) and are dominated by Andreev reflection transport mechanism. For junctions with barrier thickness of 2.0 nm and higher, no Josephson but SIS'- (SIS: superconductor-insulator-superc...

We demonstrate the growth of Co-doped BaFe2As2 (Ba-122) thin films on AEF2 (001) (AE: Ca, Sr, Ba) single crystal substrates using pulsed laser deposition. All films are grown epitaxially despite of a large misfit of -10.6% for BaF2 substrate. For all films a reaction layer is formed at the interface confirmed by X-ray diffraction and by transmission electron microscopy. The superconducting transition temperature of the film on CaF2 is around 27 K, whereas the corresponding values of the other films are around 21 K. The Ba-122 on CaF2 shows identical crystalline quality and superconducting properties as films on Fe-buffered MgO., 5 pages, 6 figures, 2 tables

We report new magnetic susceptibility and anisotropy data for single crystals of YBa2Cu3O6+x from x = 0.38 to 0.95. We argue that the temperature (T) dependence of the magnetic anisotropy in the normal state well above Tc arises from a combination of the pseudogap and substantial g-factor anisotropy. With this interpretation we obtain onset temperatures for superconducting fluctuations over a wide range of x. For hole concentrations p < 0.14 there are two extra contributions to the magnetic susceptibility and its anisotropy. We analyse these in terms of changes in the Van Vleck paramagnetism plus a significant paramagnetic contribution from an electron pocket at low fields in the region 0:084 < p < 0.135. This is where the superconducting transition temperature Tc(p) deviates from the usual parabolic law and where quantum oscillations and a negative Hall coefficient are observed.