1. Band gap engineering in blended organic semiconductor films based on dielectric interactions
- Author
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Felix Talnack, Berthold Wegner, Norbert Koch, Kristofer Tvingstedt, Sebastian Hutsch, Frank Ortmann, Peter Bäuerle, Karl Leo, Jonas Kublitski, Hans Kleemann, Johannes Benduhn, Katrin Ortstein, Martin Schwarze, Sebastian Schellhammer, Mike Hambsch, Stefan C. B. Mannsfeld, and Astrid Vogt
- Subjects
Materials science ,business.industry ,Band gap ,Mechanical Engineering ,02 engineering and technology ,General Chemistry ,Dielectric ,010402 general chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,0104 chemical sciences ,Organic semiconductor ,chemistry.chemical_compound ,X-ray photoelectron spectroscopy ,chemistry ,Mechanics of Materials ,Electron affinity ,Thiophene ,Band-gap engineering ,Optoelectronics ,General Materials Science ,Ionization energy ,0210 nano-technology ,business - Abstract
Blending organic molecules to tune their energy levels is currently being investigated as an approach to engineer the bulk and interfacial optoelectronic properties of organic semiconductors. It has been proven that the ionization energy and electron affinity can be equally shifted in the same direction by electrostatic effects controlled by blending similar halogenated derivatives with different energetics. Here we show that the energy gap of organic semiconductors can also be tuned by blending. We use oligothiophenes with different numbers of thiophene rings as an example and investigate their structure and electronic properties. Photoelectron spectroscopy and inverse photoelectron spectroscopy show tunability of the single-particle gap, with the optical gaps showing similar, but smaller, effects. Theoretical analysis shows that this tuning is mainly caused by a change in the dielectric constant with blend ratio. Further studies will explore the practical impact of this energy-level engineering strategy for optoelectronic devices.
- Published
- 2021
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