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Bipolar plate (BP) in proton exchange membrane (PEM) fuel cells provides conducting paths for electrons between cells, distributes and blocks the reactant gases, removes waste heat, and provides stack structural integrity. It is a key component to ensure the aforementioned functions while maintaining a low cost of fuel cell stack. This paper presents a comprehensive review about the BP materials (metallic, non-porous graphite and composite materials) and the corresponding fabrication methods, flow field layouts, and PEM fuel cells applications. Among the materials, the metallic BP has attracted high attention in automotive application due to its superior mechanical and physical properties, competitive cost compared with non-porous graphite and composite materials, but the fabrication technology and corrosion resistance are the major concerns for metallic bipolar plates. In recent studies, the protective coatings reported such as the conductive polymer, metal nitride/carbide and noble coatings have become the hot topics. They have been widely applied in different kinds of metallic bipolar plates, and the metal nitride coatings exhibit relatively low corrosion current and moderate interfacial contact resistance in comparison to other coatings. In future, developing excellent corrosion resistance and electrical conductivity coatings or novel metallic materials for bipolar plates will greatly enhance PEM fuel cells application in transportation field.

A novel glucan PSPP-1 (18.3 kDa) was purified from the foot tuber of purple sweet potato Ipomoea Batatas (L.) Lam. Its backbone was composed of →4)-α- d -Glcp(1→ glycosyl, and branching at the O-2, O-3, and O-6 positions with α- d -Glcp(1→ residues. X-ray diffraction experiment showed that PSPP-1 existed as an amorphous form. Its microstructure was detected via scanning electron microscopy. Its particle size was mainly concentrated at 230 nm in water. Congo red and circular dichroism experiments showed there was no triple-helix conformation. Atomic force microscopy data suggested that its height and width ranged from 1.0 to 6.1 nm and 65 to 210 nm, respectively; its maximum ring diameter and chain length was ∼800 nm and ∼7.0 μm, respectively. Furthermore, it exhibited inhibitory activities on HepG2, LOVO, and MCF-7 cells. Collectively, our data are useful for understanding the structural characteristics of sweet potato polysaccharides, and their application in foods and pharmaceutical areas.

To keep pace with the upcoming big-data era, the development of a device-level neuromorphic system with highly efficient computing paradigms is underway with numerous attempts. Synaptic transistors based on an all-solution processing method have received growing interest as building blocks for neuromorphic computing based on spikes. Here, we propose and experimentally demonstrated the dual operation mode in poly{2,2-(2,5-bis(2-octyldodecyl)-3,6-dioxo-2,3,5,6-tetrahydropyrrolo[3,4-c]pyrrole-1,4-diyl)dithieno[3,2-b]thiophene-5,5-diyl-alt-thiophen-2,5-diyl}(PDPPBTT)/ZnO junction-based synaptic transistor from ambipolar charge-trapping mechanism to analog the spiking interfere with synaptic plasticity. The heterojunction formed by PDPPBTT and ZnO layers serves as the basis for hole-enhancement and electron-enhancement modes of the synaptic transistor. Distinctive synaptic responses of paired-pulse facilitation (PPF) and paired-pulse depression (PPD) were configured to achieve the training/recognition function for digit image patterns at the device-to-system level. The experimental results indicate the potential application of the ambipolar transistor in future neuromorphic intelligent systems.

Since the discovery of perovskite materials with the general chemical formula ABX3 in 1839, research on perovskite materials has drawn exponentially greater attention, owing to their flexible properties, including their ferroelectric, piezoelectric, and dielectric, as well as resistive switching, properties. Perovskite materials have high potential for developing nonvolatile high-density data storage devices. In this review, we summarized the current development of the application of perovskites in nonvolatile memories with an emphasis on the resistive switching properties. The unique advances of perovskite materials are introduced, followed by an assortment of the characterisations of their compositions and crystal structures. The insight into perovskite materials in artificial synapses has also concluded with predictable opportunities and challenges in this promising field.

Electronic synapses implementing in-memory computing system could overcome the developing limitation on the energy efficiency of traditional von Neumann architecture. Compared with the high sensitivity of biological synapses, lower responsivity of the memristive synapses was found via the electrical stimulations. Here, poly{2,2-(2,5-bis(2-octyldodecyl)-3,6-dioxo-2,3,5,6- tetrahydropyrrolo[3,4-c]pyrrole-1,4-diyl)-dithieno[3,2-b]thiophene-5,5-diyl-alt-thiophen-2,5-diyl} (PDPPBTT)/zinc oxide (ZnO) based heterojunction is found to exhibit stable memristive switching behavior, which originates from the confined formation/rupture of filament in the two-layer interface region as the ions migrate with different transport rates in two layers. The implementing synaptic functions in the sensitive memristive device can realize the short-term plasticity and long-term plasticity when stimulated by the applied electrical signals with different stimulating rate. Similar to the biological synapse, the memory loss, memory transition, and the critical role of stimulation rate on the transition process, can be achieved in the as-prepared memristor device. The systematic demonstrations on the synaptic emulation may facilitate building bio-inspired device-level neuromorphic systems.

The coastal regions of the East China Sea are frequently threatened by the increased sea level induced by intense tropical cyclones. In this study, a coupled wave-circulation model ADCIRC + SWAN is used to investigate the spatial and temporal characteristics of storm surges and wave setup heights in the southeastern coastal area of China during two severe weather events with different tracks: Typhoon Saomai, which made direct landfall, and the bypassing Typhoon Chan-hom. By definition, the storm surge is attributable to the wind forcing, while the wave setup results from the wave radiation stress. The simulated sea levels agree well with the observations, with improved results when the wave setup was considered. The simulation results showed clearly different spatial patterns depending on the track type. The maximum storm surge resulted from the cumulative effect of the local onshore wind forcing, occurring on the right side of the Typhoon Saomai track and the left side of the Typhoon Chan-hom track. Significant surge levels along the coast on the left side of the typhoon track were well observed in both cases, resulting from the coastal-trapped shelf waves. The Saomai track type is more likely to cause extremely high storm surges along the coast due to the stronger cumulative effect of the onshore wind forcing. The maximum wave setup was governed by the swell and slope of the sea floor. The locations of the maximum wave setup and surge level were spatially close during Typhoon Saomai, but they were separated during Typhoon Chan-hom.

The in-depth understanding of ions' generation and movement inside all-inorganic perovskite quantum dots (CsPbBr3 QDs), which may lead to a paradigm to break through the conventional von Neumann bottleneck, is strictly limited. Here, it is shown that formation and annihilation of metal conductive filaments and Br- ion vacancy filaments driven by an external electric field and light irradiation can lead to pronounced resistive-switching effects. Verified by field-emission scanning electron microscopy as well as energy-dispersive X-ray spectroscopy analysis, the resistive switching behavior of CsPbBr3 QD-based photonic resistive random-access memory (RRAM) is initiated by the electrochemical metallization and valance change. By coupling CsPbBr3 QD-based RRAM with a p-channel transistor, the novel application of an RRAM-gate field-effect transistor presenting analogous functions of flash memory is further demonstrated. These results may accelerate the technological deployment of all-inorganic perovskite QD-based photonic resistive memory for successful logic application.

Inspired by the biological neuromorphic system, which exhibits a high degree of connectivity to process huge amounts of information, photonic memory is expected to pave a way to overcome the von Neumann bottleneck for nonconventional computing. Here, a photonic flash memory based on all-inorganic CsPbBr3 perovskite quantum dots (QDs) is demonstrated. The heterostructure formed between the CsPbBr3 QDs and semiconductor layer serves as a basis for optically programmable and electrically erasable characteristics of the memory device. Furthermore, synapse functions including short-term plasticity, long-term plasticity, and spike-rate-dependent plasticity are emulated at the device level. The photonic potentiation and electrical habituation are implemented and the synaptic weight exhibits multiple wavelength response from 365, 450, 520 to 660 nm. These results may locate the stage for further thrilling novel advances in perovskite-based memories.