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By using four layered graphene/gallium nitride (GaN) Schottky diodes with an undoped GaN spacer, we demonstrate highly effective gating of graphene at low bias rendering this type of structure very promising for potential applications. An observed Raman G band position shift larger than 8.5 cm-1 corresponds to an increase in carrier concentration of about 1.2x10^13 cm-2. The presence of a distinct G band splitting together with a narrow symmetric 2D band indicates turbostratic layer stacking and suggests the presence of a high potential gradient near the Schottky junction even at zero bias. The subbands characterized by the highest Raman energies correspond to the largest concentration of electrons. An analysis based on electroreflectance measurements and a modified Richardson equation confirmed that graphene on n-GaN separated by an undoped GaN spacer behaves like a capacitor at reverse bias. At least 60% of G subband position shifts occur at forward bias, which is related to a rapid reduction of electric field near the Schottky junction. Raman micromapping shows a high uniformity of gating efficiency on the surface. Therefore, our studies demonstrate the usefulness of few layer turbostratic graphene deposited on GaN for tracing electron-phonon coupling in graphene. Multilayer graphene also provides uniform and stable electric contacts. Moreover, the observed bias sensitive G band splitting can be used as an indicator of charge transfer in sensor applications in the low bias regime.

We present the performance of an all polarization-maintaining Erbium-doped fiber laser mode-locked by a multilayer graphene based saturable absorber. The cavity incorporates a Martinez-type compressor, based on a transmission grating, which allows for continuous tuning of the net cavity dispersion as well as spectral filtering. By adjusting the dispersion and the spectral bandwidth, we could operate the laser in the soliton, the dispersion managed soliton and the absorber-limited pulse regimes. The pulse durations from the laser ranged between 338 fs to 2.1 ps and the laser could be operated at nearly constant output powers in the anomalous and the normal dispersion regimes. We also conducted stability analyses based on dispersive Fourier transform measurements in the different operating regimes. Comparison of the collected spectra reveals that the soliton regime had the best overall stability.

In this paper, new cost-effective platinum-free and flexible counter electrodes (CEs) for dye-sensitized solar cells (DSSCs) were reported. The ITO/PET CEs were produced using graphene films synthesized by CVD method and graphene flakes with addition PEDOT: PSS or PEDOT: PSS/PVP. The influence of mechanical stress arising from the bending of a flexible substrate on morphology, resistance of CEs as well as electrical properties of DSSCs was analyzed. The testing of these electrodes in DSSCs have demonstrated a power conversion efficiency of up to 3.95% to compare with the power conversion efficiency of 4.39% for DSSC with a standard Pt-based CE. After 100 bending cycles the electrodes demonstrated power conversion efficiency in range the 2.37–3.23% to compare with the power conversion efficiency of 2.08% for DSSC with a standard Pt-based CE. HRTEM investigation confirms the crystallographic structure of graphene. The obtained results demonstrate the possibility of replacing expensive platinum in DSCC by using graphene-based counter electrode.

The one-port configuration of a microwave device is the simplest architecture for graphene ultrafast (photo-)resistors, (photo-)diodes, sensors, and photodetectors. Here, this configuration is realized by a segment of coplanar waveguide (CPW) loaded with a CVD graphene monolayer shorted to the ground. The magnitude and phase of the reflection coefficient ( ${S}_{11}$ parameter) measured in the $0.1~\div ~26$ GHz frequency range are presented for undisturbed structures as well as for structures illuminated by white light and electrostatically polarized with the backgate. A simple and robust de-embedding procedure based on the signal flow graph and allowing for a simultaneous extraction of the parameters characterizing the CPW segment and the graphene monolayer is proposed. The graphene impedance at microwave frequencies is in good agreement with the value of dc sheet resistance obtained from van der Pauw measurements. The back-gate voltage modulation is an efficient way to modulate both the dc sheet resistance and the impedance. In particular, the Dirac point can be achieved both at microwave frequencies and at dc. An equivalent circuit model consists of only the resistance and capacitance connected in parallel, because of good quality ohmic contacts and a negligible inductance as a result of low-current flow in high-resistance graphene samples.

We present a cross-correlation characterization of bound soliton states emerging in a polarization-multiplexed single-cavity dual-comb laser. High temporal and spectral resolution measurements over long optical delays are obtained through multi-heterodyne beating of the laser output.

This paper presents the study on power scaling of an all-polarization maintaining (PM) fiber mode-locked laser using the multilayer chemical vapor deposition graphene/poly(methyl methacrylate) composite as a saturable absorber by changing the coupling ratio of the laser output coupler. Pulses with the duration of 148 fs were generated using 10% output coupler, which are the shortest pulses obtained from mode-locked erbium doped fiber laser working in anomalous dispersion regime, additionally the highest average output power of 15.66 mW was achieved by applying 70% output coupler. All-PM fiber resonator configuration provides self-start and stable operation. To our knowledge, this is the first comprehensive study of power scaling of erbium doped fiber laser with graphene saturable absorber. Conducted experimental work is in very good agreement with numerical simulations.

In this Letter, we demonstrate an all-fiber holmium-doped laser operating in the stretched-pulse regime. As a result of dispersion management, the laser is capable of generating 190 fs pulses with a bandwidth of 53.6 nm. The pulses centered at 2060 nm reach 2.55 nJ of energy. Mode-locking is achieved with a multilayer graphene saturable absorber (SA). The Letter also presents the measurement of group velocity dispersion of active (Nufern SM-HDF-10/130), passive (SMF28), and dispersion-compensating (Nufern UHNA4) fibers in a 1.8–2.1 μm range. To the best of our knowledge, this is the first report on an all-fiber, stretched-pulse laser operating beyond 2 μm with nanomaterial-based SA.

The surface-enhanced Raman scattering in graphene deposited on AlxGa1−xN/GaN axial heterostructure nanowires was investigated. It was found that the intensity of graphene Raman spectra is not correlated with aluminium content. Analysis of graphene Raman band parameters, Kelvin probe force microscopy, and electroreflectance showed a screening of polarisation charges. Theoretical calculations demonstrated that plasmon resonance in graphene is far beyond the Raman spectral range. This excludes the presence of an electromagnetic mechanism of surface-enhanced Raman scattering, hence suggesting a chemical mechanism of enhancement.

In this Letter, we demonstrate an all-polarization-maintaining, stretched-pulse Tm-doped fiber laser generating ∼200 fs pulses centered at 1945 nm. As a saturable absorber, a graphene/poly(methyl methacrylate) composite was used. To the best of our knowledge, this is the first demonstration of stretched-pulse operation of a graphene-based fiber laser at 2 μm.

In this report, we demonstrate the preparation method of a multi-layer stack with a pre-defined number of graphene layers, which was obtained using chemical vapor deposition graphene deposited on a copper substrate and subsequently transferred onto a poly(methyl methacrylate) (PMMA) substrate. The prepared multi-layer stack can also be transferred onto an arbitrary substrate and in the end, the polymer can be removed, which in consequence significantly increases the range of possible graphene applications. The multi-layer character was confirmed by optical transmittance measurements and Raman spectroscopy, whereas the microstructure of the multi-layer graphene stack was investigated using Scanning Electron Microscopy. The electrical properties in the function of the number of graphene layers were assessed with standard Hall Effect measurements. Finally, we showed the practical application of the multi-layer graphene stack as a saturable absorber of a mode-locked Er-doped fiber laser.

We demonstrate the generation of 98 fs soliton pulses in all-polarization maintaining fiber laser mode-locked by graphene saturable absorber. The experimental results are supported by detailed numerical simulations. We confirmed soliton-like pulse shaping in the cavity with strong dispersion-management. The developed computer model was used to study the intra-cavity pulse dynamics. These are the shortest soliton pulses generated in a fiber laser with graphene-based saturable absorber up to date (with the broadest optical spectrum).