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Your search keyword '"Martins, João R."' showing total 4 results
Start Over Author "Martins, João R." Topic [spi.tron]engineering sciences [physics]/electronics
4 results on '"Martins, João R."'

1. A 237 ppm / ◦ C L-Band Active Inductance Based Voltage Controlled Oscillator in SOI 0.18 µm

Author

Raposo de O. Martins, João R., Alves, Francisco, Maris Ferreira, Pietro, Laboratoire Génie électrique et électronique de Paris (GeePs), and CentraleSupélec-Sorbonne Université (SU)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2021

2. A Temperature-Aware Framework on gm/ID-Based Methodology using 180 nm SOI from -40 ◦C to 200 ◦C

Author

Raposo de O. Martins, João R., Mostafa, Ali, Juillard, Jérôme, Hamani, Rachid, Alves, Francisco, Maris Ferreira, Pietro, Laboratoire Génie électrique et électronique de Paris (GeePs), CentraleSupélec-Sorbonne Université (SU)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), and X-FAB, Corbeil-Essonne

Subjects
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2021

3. Temperature-Aware gm/ID-based Methodology for Active Inductor Design

Author

Martins, João R. Raposo O., Emilie Avignon-Meseldzija, Pietro Maris Ferreira, Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-CentraleSupélec-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), and Maris Ferreira, Pietro

Subjects
temperature-aware, gm/ID methodology, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, harsh environment, Hardware_INTEGRATEDCIRCUITS, active inductors, Hardware_PERFORMANCEANDRELIABILITY, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.TRON] Engineering Sciences [physics]/Electronics, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience; Active inductors have become standard building blocks for many applications by its recon gurability and reduced silicon area. However, the inductance variation over temperature is a main circuits' limitation in harsh environments. This paper presents a novel temperature analysis of a general architecture of active inductors, obtaining an optimal conductance value to minimize inductance variation over temperature. Based on the m /I D and sensitivity analysis, temperature variation result highlights that, even if its counter intuitive to bias transistors in weak inversion, a low inductance variation of 139 ppm/ °C.

Published
2019

4. Méthodologie de Conception Conscient des Variations en Température: Circuits de Lecture pour les Environnements Sous Contraintes

Author

Raposo de O. Martins, João R., Maris Ferreira, Pietro, Laboratoire Génie électrique et électronique de Paris (GeePs), and Université Paris-Sud - Paris 11 (UP11)-CentraleSupélec-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)

Subjects
ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2019

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