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National audience; Cet article traite de la mesure en fonctionnementdes paramètres électriques sensibles à la dégradation des semiconducteursde puissance menant à une approche de surveillancede l’état de santé du module de puissance. La résistance à l’étatpassant RDSON est un indicateur de vieillissement clé des MOSFETsen carbure de silicium. Elle peut fournir des informations sur ladégradation de la puce et du boîtier afin de rendre un convertisseurde puissance plus fiable. Cette résistance à l’état passant peutêtre déterminée en utilisant à la fois le courant à l’état passant etla tension du semi-conducteur de puissance. Cet article proposeun circuit de mesure de tension à l’état passant pour les moduleshaute puissance (jusqu’à 3.3 kV, 500A). Le circuit proposé estvalidé lors d’un test double pulse pour différentes températuresde semelle du module et comparé aux données obtenues avec untraceur de courbe Keysight B1505.

International audience; This paper deals with online measurement of degradation sensitive electrical parameters leading to a healthmonitoring approach for power module. The on-state resistance RDSON is a key aging indicator of silicon carbideMOSFETs. It can provide information on both chip and packaging degradation allowing more reliable powerelectronic converter. This on-state resistance can be determined using both the on-state current and voltage of thepower semiconductor. This paper focuses on an on-state voltage measurement circuit for high power modules (upto 3.3 kV, 500A SiC module). A power module switching oscillation model is used to design and fine tune theproposed solution. Finally, the proposed circuit is successfully tested on a double pulse test for various modulebase plate temperatures and compared to data obtained with a static curve tracer Keysight B1505.

International audience; This paper presents a new source driver topology in order make gate leakage current monitoring anddesaturation (DESAT) protection circuits compatible. As the high voltage diodes’ leakage current flowsthrough the estimation circuit, both monitoring circuit and protection circuit cannot coexist. One solution isto drive the power component in the source path. This new topology was successfully implemented andtested. A gate leakage current monitoring circuit compatible with DESAT protection thanks to this newtopology is proposed in this paper.

National audience

International audience; Wide bandgap power switching device technologies earned immense superiority in power density converters in terms of higher switching frequency and efficiency attainments. However, this becomes opposing when utilized in planar pulse transformer-based gate driver applications, where rapid switching speeds originate electromagnetic disturbances due to the passage of common mode currents through the transformer’s stray capacitances. This paper will examine the common mode transient immunity (CMTI) of a shielded pulse planar transformer whilst examining the impact of dielectric material selection on the outcome result. The simulation methodology using Altium Designer and Ansys Q3D Extractor with dynamic links will be presented, in addition to agreeable experimental verifications.