1. An improved monitoring of gate leakage current on SiC Power MOSFETs using source driver topology
- Author
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Laspeyres, Antoine, Makki, Loreine, Darbas, Corentin, Descamps, Anne-Sophie, Batard, Christophe, Ginot, Nicolas, Azzopardi, Stéphane, Long Le, Thanh, Youssef, Toni, Institut d'Électronique et des Technologies du numéRique (IETR), Nantes Université (NU)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), SAFRAN Group, Université de Nantes (UN)-Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Charlier, Sandrine, and Université de Nantes (UN)-Université de Rennes 1 (UR1)
- Subjects
[SPI.OTHER]Engineering Sciences [physics]/Other ,[SPI.OTHER] Engineering Sciences [physics]/Other ,Hardware_INTEGRATEDCIRCUITS ,Hardware_PERFORMANCEANDRELIABILITY ,[SPI.TRON] Engineering Sciences [physics]/Electronics ,Hardware_LOGICDESIGN ,[SPI.TRON]Engineering Sciences [physics]/Electronics - Abstract
International audience; This paper presents a new source driver topology in order make gate leakage current monitoring anddesaturation (DESAT) protection circuits compatible. As the high voltage diodes’ leakage current flowsthrough the estimation circuit, both monitoring circuit and protection circuit cannot coexist. One solution isto drive the power component in the source path. This new topology was successfully implemented andtested. A gate leakage current monitoring circuit compatible with DESAT protection thanks to this newtopology is proposed in this paper.
- Published
- 2022