1. Femtosecond laser induced creation of G and W-centers in silicon-on-insulator substrates
- Author
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Quard, Hugo, Khoury, Mario, Wang, Andong, Herzig, Tobias, Meijer, Jan, Pezzagna, Sébastien, Cueff, Sébastien, Grojo, David, Abbarchi, Marco, Nguyen, Hai Son, Chauvin, Nicolas, Wood, Thomas, INL - Matériaux Fonctionnels et Nanostructures (INL - MFN), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Ingénierie et conversion de lumière (i-Lum) (INL - I-Lum), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Lasers, Plasmas et Procédés photoniques (LP3), Aix Marseille Université (AMU)-Centre National de la Recherche Scientifique (CNRS), Universität Leipzig, ANR-15-CE24-0027,ULYSSES,Émetteurs de lumière quantique et classique en silicium: Impuretés et défauts complexes pour la nanophotonique(2015), ANR-18-CE47-0013,OCTOPUS,Qubits de spin adressables optiquement dans le silicium 28(2018), European Project: 828890,NARCISO, and European Project: 724480,European Union’s Horizon 2020 research and innovation program,EXSEED(2017)
- Subjects
Femtosecond laser ,Quantum Physics ,fluorescent defects in silicon ,[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic ,FOS: Physical sciences ,Telecom band ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,Quantum Physics (quant-ph) ,Optics (physics.optics) ,Physics - Optics - Abstract
The creation of fluorescent defects in silicon is a key stepping stone towards assuring the integration perspectives of quantum photonic devices into existing technologies. Here we demonstrate the creation, by femtosecond laser annealing, of W and G-centers in commercial silicon on insulator (SOI) previously implanted with 12C+ ions. Their quality is comparable to that found for the same emitters obtained with conventional implant processes; as quantified by the photoluminescence radiative lifetime, the broadening of their zero-phonon line (ZPL) and the evolution of these quantities with temperature. In addition to this, we show that both defects can be created without carbon implantation and that we can erase the G-centers by annealing while enhancing the W-centers' emission. These demonstrations are relevant to the deterministic and operando generation of quantum emitters in silicon., 8 pages, 4 figures
- Published
- 2023