1. Thin epitaxial quartz films with tunable textures on silicon
- Author
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CARRETERO-GENEVRIER, Adrien, GICH, M., PICAS, L., GAZQUEZ, J., DRISKO, G., Boissière, C., Grosso, D., Rodríguez-Carvajal, J., Sanchez, C., INL - Hétéroepitaxie et Nanostructures (INL - H&N), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Laboratoire de Chimie de la Matière Condensée de Paris (site Paris VI) (LCMCP (site Paris VI)), Université Pierre et Marie Curie - Paris 6 (UPMC)-Collège de France (CdF (institution))-Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institut Laue-Langevin (ILL), ILL, Chaire Chimie des matériaux hybrides, Laboratoire de Chimie de la Matière Condensée de Paris (LCMCP), Institut de Chimie du CNRS (INC)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)
- Subjects
[SPI]Engineering Sciences [physics] ,[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.MAT]Engineering Sciences [physics]/Materials - Abstract
9-13 March 2015; International audience; The integration of quartz on silicon in thin film form is appealing for its prospective applications in sensing and electronics. For instance, this could be used to make oscillators with higher resonance frequencies, in new electromechanical devices or mass sensors showing improved detection limits. We have recently reported the epitaxial growth of quartz films on silicon following a soft-chemistry approach1. The aim of this contribution is to discuss in detail the mechanisms of this synthesis. The films are obtained by the crystallization of amorphous silica films prepared by chemical solution deposition. Two key components of the solution are Sr2+, acting as catalyst for the crystallization of silica, and amphipilic templates playing the role of structuring agents and assisting in the crucial phase separation of the catalyst. The good matching between the quartz and silicon cell parameters is also essential in the stabilization of quartz over other SiO2 polymorphs and is at the origin of the epitaxial growth. The films are piezoelectric and can be tailored to be dense or to present an ordered porosity with pore diameters ranging from a few tenths of nanometer to the micron scale.
- Published
- 2015