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8 results on '"C. Portemont"'

1. Steady State and Dynamics of Joule Heating in Magnetic Tunnel Junctions Observed via the Temperature Dependence of RKKY Coupling

Author

C. Portemont, I. L. Prejbeanu, Antoine Chavent, Ricardo C. Sousa, Clarisse Ducruet, Laurent Vila, Jérémy Alvarez-Hérault, Bernard Dieny, SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), CROCUS Technology, and ANR-13-NANO-0010,EXCALYB,Cellules MRAM sub-20nm et intégration CMOS de circuits hybrides(2013)

Subjects
Coupling, Magnetoresistive random-access memory, Condensed Matter - Materials Science, Materials science, Steady state, Condensed matter physics, Magnetic moment, Spintronics, General Physics and Astronomy, Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, 02 engineering and technology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, 01 natural sciences, 3. Good health, Tunnel magnetoresistance, 0103 physical sciences, Torque, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, 0210 nano-technology, Joule heating, ComputingMilieux_MISCELLANEOUS
Abstract

Understanding quantitatively the heating dynamics in magnetic tunnel junctions (MTJ) submitted to current pulses is very important in the context of spin-transfer-torque magnetic random access memory development. Here we provide a method to probe the heating of MTJ using the RKKY coupling of a synthetic ferrimagnetic storage layer as a thermal sensor. The temperature increase versus applied bias voltage is measured thanks to the decrease of the spin-flop field with temperature. This method allows distinguishing spin transfer torque (STT) effects from the influence of temperature on the switching field. The heating dynamics is then studied in real-time by probing the conductance variation due to spin-flop rotation during heating. This approach provides a new method for measuring fast heating in spintronic devices, particularly magnetic random access memory (MRAM) using thermally assisted or spin transfer torque writing., Comment: 6 pages, 9 figures

Published
2016
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2. Effects of the Heating Current Polarity on the Writing of Thermally Assisted Switching-MRAM

Author

Ken Mackay, Julien Vidal, I. L. Prejbeanu, Claire Creuzet, C. Portemont, Jérémy Alvarez-Hérault, Antoine Chavent, Bernard Dieny, Ricardo Sousa, Jeremy Pereira, SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), and CROCUS Technology

Subjects
Magnetoresistive random-access memory, Materials science, Nuclear magnetic resonance, business.industry, Polarity (physics), Optoelectronics, Electrical and Electronic Engineering, Current (fluid), [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], business, ComputingMilieux_MISCELLANEOUS, Electronic, Optical and Magnetic Materials
Abstract

International audience

Published
2014
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3. Self-referenced multi-bit thermally assisted magnetic random access memories

Author

C. Creuzet, R. C. Sousa, C. Portemont, D. Lee, Sébastien Bandiera, B. Dieny, Quentin Stainer, K. Mackay, Lucien Lombard, SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), and CROCUS Technology

Subjects
010302 applied physics, Coupling, Materials science, Physics and Astronomy (miscellaneous), Field (physics), Condensed matter physics, Reading (computer), Phase (waves), 02 engineering and technology, 021001 nanoscience & nanotechnology, Rotation, 01 natural sciences, Magnetization, Tunnel magnetoresistance, Ferromagnetism, Condensed Matter::Superconductivity, 0103 physical sciences, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology
Abstract

International audience; The feasibility of 3-bits per cell storage in self-referenced thermally assisted magnetic random access memories is demonstrated both by macrospin simulations and experiments. The memory dot consists of a storage layer where CoFe/CoFeB magnetization direction is pinned by an IrMn layer using the ferromagnet/antiferromagnet interfacial exchange coupling, separated by an MgO tunnel barrier from a CoFeB sense layer whose magnetization direction is free to rotate. Writing is performed by heating the antiferromagnet above its blocking temperature by sending a current pulse through the magnetic tunnel junction, with the application of an in-plane field during the subsequent cooling phase, thus setting the new storage layer pinning direction. This pinning direction actually carries the information stored in the storage layer. Reading is performed by applying a rotating field, inducing a coherent rotation of the sense layer, and subsequently locating the field angle associated with the minimum measured resistance. This angle corresponds to the parallel magnetic configuration of the magnetic tunnel junction and therefore allows determining the pinning direction established during the write operation. The number of distinguishable pinning angles defines the total number of bits that can be stored in a single dot. V C 2014 AIP Publishing LLC.

Published
2014
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4. Mixing antiferromagnets to tune NiFe-[IrMn/FeMn] interfacial spin-glasses, grains thermal stability, and related exchange bias properties

Author

K. Akmaldinov, I. Joumard, I. L. Prejbeanu, B. Dieny, C. Portemont, Clarisse Ducruet, Vincent Baltz, SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), and CROCUS Technology

Subjects
Materials science, Spin glass, Spintronics, Condensed matter physics, Magnetism, General Physics and Astronomy, 02 engineering and technology, 021001 nanoscience & nanotechnology, Microstructure, 01 natural sciences, Exchange bias, Ferromagnetism, 0103 physical sciences, Antiferromagnetism, Thermal stability, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, 0210 nano-technology
Abstract

International audience; Spintronics devices and in particular thermally assisted magnetic random access memories require a wide range of ferromagnetic/antiferromagnetic (F/AF) exchange bias (EB) properties and subsequently of AF materials to fulfil diverse functionality requirements for the reference and storage. For the reference layer, large EB energies and high blocking temperature (T B) are required. In contrast, for the storage layer, mostly moderate T B are needed. One of the present issues is to find a storage layer with properties intermediate between those of IrMn and FeMn and in particular: (i) with a T B larger than FeMn for better stability at rest-T but lower than IrMn to reduce power consumption at write-T and (ii) with improved magnetic interfacial quality, i.e., with reduced interfacial glassy character for lower properties dispersions. To address this issue, the EB properties of F/AF based stacks were studied for various mixed [IrMn/FeMn] AFs. In addition to EB loop shifts, the F/AF magnetic interfacial qualities and the AF grains thermal stability are probed via measurements of the low-and high-temperature contributions to the T B distributions, respectively. A tuning of the above three parameters is observed when evolving from IrMn to FeMn via [IrMn/FeMn] repetitions.

Published
2014
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5. Crossover from spin accumulation into interface states to spin injection in the germanium conduction band

Author

J. Peiro, J. C. Le Breton, Matthieu Jamet, Emmanuel Augendre, Pascale Bayle-Guillemaud, A. Barski, Laurent Vila, Eric Prestat, Juan-Carlos Rojas-Sánchez, Vincent Baltz, M. Cubukcu, Henri Jaffrès, G. Desfonds, S. Gambarelli, Clarisse Ducruet, Jean-Philippe Attané, C. Portemont, J.-M. George, L. Louahadj, A. Jain, C. Vergnaud, Nanostructures et Magnétisme (NM), Service de Physique des Matériaux et Microstructures (SP2M - UMR 9002), Institut Nanosciences et Cryogénie (INAC), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut Nanosciences et Cryogénie (INAC), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Unité mixte de physique CNRS/Thales (UMPhy CNRS/THALES), Centre National de la Recherche Scientifique (CNRS)-THALES, Laboratoire d'Etude des Matériaux par Microscopie Avancée (LEMMA ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), CROCUS Technology, SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Magnetic Resonance (RM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut Nanosciences et Cryogénie (INAC), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), THALES [France]-Centre National de la Recherche Scientifique (CNRS), and Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG)

Subjects
010302 applied physics, Spin pumping, Condensed Matter - Materials Science, Materials science, Condensed matter physics, Spin polarization, Spintronics, Condensed Matter - Mesoscale and Nanoscale Physics, General Physics and Astronomy, Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, 02 engineering and technology, Zero field splitting, 021001 nanoscience & nanotechnology, 01 natural sciences, Tunnel magnetoresistance, Spin wave, 0103 physical sciences, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), Spin Hall effect, Spin diffusion, Condensed Matter::Strongly Correlated Electrons, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 0210 nano-technology
Abstract

Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in spin injection mechanism from a magnetic tunnel junction into a semiconductor is still under debate. In this letter, we demonstrate a clear transition from spin accumulation into interface states to spin injection in the conduction band of $n$-Ge. We observe spin signal amplification at low temperature due to spin accumulation into interface states followed by a clear transition towards spin injection in the conduction band from 200 K up to room temperature. In this regime, the spin signal is reduced down to a value compatible with spin diffusion model. More interestingly, we demonstrate in this regime a significant modulation of the spin signal by spin pumping generated by ferromagnetic resonance and also by applying a back-gate voltage which are clear manifestations of spin current and accumulation in the germanium conduction band., 5 pages, 4 figures

Published
2012
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6. Comparison of Synthetic Antiferromagnets and Hard Ferromagnets as Reference Layer in Magnetic Tunnel Junctions With Perpendicular Magnetic Anisotropy

Author

B. Dieny, Vincent Baltz, C. Portemont, Stéphane Auffret, Sébastien Bandiera, Y. Dahmane, Ioan Lucian Prejbeanu, Clarisse Ducruet, R. C. Sousa, SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), and CROCUS Technology

Subjects
010302 applied physics, Materials science, Condensed matter physics, Perpendicular magnetic anisotropy, Nanostructured materials, media_common.quotation_subject, Magnetic tunnelling, 02 engineering and technology, 021001 nanoscience & nanotechnology, Magnetic hysteresis, 01 natural sciences, Asymmetry, Electronic, Optical and Magnetic Materials, Dipole, Ferromagnetism, 0103 physical sciences, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 0210 nano-technology, Layer (electronics), ComputingMilieux_MISCELLANEOUS, media_common
Abstract

In magnetic tunnel junctions (MTJ), synthetic antiferromagnets (SAF) are usually used as reference layer to minimize dipolar interactions induced between this layer and the free layer (FL). We show here that the use of SAF allows us to reduce the asymmetry of the FL reversal due to stray fields in nanosized MTJs with perpendicular magnetic anisotropy.

Published
2010
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7. Electrical and thermal spin accumulation in germanium

Author

A. Jain, A. Barski, Matthieu Jamet, Vincent Baltz, Emmanuel Augendre, J. C. Le Breton, L. Louahadj, Pascale Bayle-Guillemaud, Henri Jaffrès, Céline Vergnaud, Clarisse Ducruet, J.-M. George, Eric Prestat, Jean-Philippe Attané, C. Portemont, Laurent Vila, Alain Marty, J. Peiro, Nanostructures et Magnétisme (NM), Service de Physique des Matériaux et Microstructures (SP2M - UMR 9002), Institut Nanosciences et Cryogénie (INAC), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut Nanosciences et Cryogénie (INAC), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Unité mixte de physique CNRS/Thales (UMPhy CNRS/THALES), THALES-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'Etude des Matériaux par Microscopie Avancée (LEMMA ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), CROCUS Technology, SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), THALES [France]-Centre National de la Recherche Scientifique (CNRS), and Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG)

Subjects
Materials science, Physics and Astronomy (miscellaneous), FOS: Physical sciences, chemistry.chemical_element, Germanium, 02 engineering and technology, 01 natural sciences, Signal, Spin wave, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), 0103 physical sciences, Thermoelectric effect, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, Spin-½, Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics, Condensed matter physics, Materials Science (cond-mat.mtrl-sci), 021001 nanoscience & nanotechnology, Temperature gradient, chemistry, Ferromagnetism, Spin diffusion, Condensed Matter::Strongly Correlated Electrons, 0210 nano-technology
Abstract

In this letter, we first show electrical spin injection in the germanium conduction band at room temperature and modulate the spin signal by applying a gate voltage to the channel. The corresponding signal modulation agrees well with the predictions of spin diffusion models. Then by setting a temperature gradient between germanium and the ferromagnet, we create a thermal spin accumulation in germanium without any tunnel charge current. We show that temperature gradients yield larger spin accumulations than pure electrical spin injection but, due to competing microscopic effects, the thermal spin accumulation in germanium remains surprisingly almost unchanged under the application of a gate voltage to the channel., 7 pages, 3 figures

Published
2012
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8. Precessional spin-transfer switching in a magnetic tunnel junction with a synthetic antiferromagnetic perpendicular polarizer

Author

Sébastien Bandiera, B. Rodmacq, R. C. Sousa, Cristian Papusoi, M. Marins de Castro, B. Dieny, Clarisse Ducruet, C. Portemont, A. Chavent, Ursula Ebels, S. Auffret, Laurent Vila, Ioan Lucian Prejbeanu, SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), CROCUS Technology, Nanostructures et Magnétisme (NM), Service de Physique des Matériaux et Microstructures (SP2M - UMR 9002), Institut Nanosciences et Cryogénie (INAC), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut Nanosciences et Cryogénie (INAC), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

Subjects
010302 applied physics, Materials science, Condensed matter physics, General Physics and Astronomy, 02 engineering and technology, Polarizer, 021001 nanoscience & nanotechnology, 01 natural sciences, law.invention, Magnetization, Tunnel magnetoresistance, law, Tunnel junction, Condensed Matter::Superconductivity, 0103 physical sciences, Perpendicular, Precession, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 0210 nano-technology, Current density, Nanopillar
Abstract

International audience; This paper reports sub-nanosecond precessional spin-transfer switching in elliptical magnetic tunnel junction nanopillars. This result is obtained in samples integrating a synthetic antiferromagnetic perpendicular polarizer and a tunnel junction with in-plane magnetized electrodes. The out-of-plane precession of the free layer magnetization results in oscillations of the switching probability as a function of the pulse width. At 9.25 MA/cm2 current density, these oscillations have a period of 1 ns with a high degree of coherence.

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