379 results on '"Zheng, Y.D."'
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2. Design of deep ultraviolet light-emitting diodes with staggered AlGaN quantum wells
3. Characteristics of nanoporous InGaN/GaN multiple quantum wells
4. Temperature dependent growth of InGaN/GaN single quantum well
5. Selective epitaxy of InGaN/GaN multiple quantum wells on GaN side facets
6. Experimental investigation on the upconversion mechanism of 754 nm NIR luminescence of Ho3+/Yb3+:Y2O3, Gd2O3 under 976 nm diode laserexcitation
7. Ultraviolet emission efficiencies of Al xGa 1 − x N films pseudomorphically grown on Al yGa 1 − y N template (x < y) with various Al-content combinations
8. Enhancing upconversion emissions of NaTm 0.02Yb xY 0.98− xF 4 nanocrystals through increasing Yb 3+ doping
9. Rashba spin splitting for the first two subbands in [formula omitted] heterostructures
10. The influences of O/Zn ratio and growth temperature on carbon impurity incorporation in ZnO grown by metal-organic chemical vapor deposition
11. Ferromagnetic Fe 3N films grown on GaN(0 0 0 2) substrates by MOCVD
12. In vitro biological performance of nano-particles on the surface of hydroxyapatite coatings
13. Rapid thermal annealing induced changes on the contact of Ni/Au to N-doped ZnO
14. Effect of NH 3 flow rate on growth, structure and luminescence of amorphous silicon nitride films by electron cyclotron resonance plasma
15. Al incorporation, structural and optical properties of Al xGa 1−xN (0.13⩽ x⩽0.8) alloys grown by MOCVD
16. High temperature dehydrogenation for realization of nitrogen-doped p-type ZnO
17. Room-temperature ferromagnetism in Mn-N Co-doped p-ZnO epilayers by metal-organic chemical vapor deposition
18. Charge storage characteristics in Al/AlN/Si metal–insulator–semiconductor structure based on deep traps in AlN layer
19. Temperature dependence of strain in Al 0.22Ga 0.78N/GaN heterostructures with and without Si 3N 4 passivation
20. Modeling analysis of the MOCVD growth of ZnO film
21. The high mobility InN film grown by MOCVD with GaN buffer layer
22. High reflectivity AlGaN/AlN DBR mirrors grown by MOCVD
23. The template effects on AlN/Al 0.3Ga 0.7N distributed Bragg reflectors grown by MOCVD
24. Correlation between green luminescence and morphology evolution of ZnO films
25. Quantum and transport scattering times in modulation-doped AlxGa1-xN/GaN single quantum wells
26. Phase-separation suppression in GaN-rich side of GaNP alloys grown by metal–organic chemical vapor deposition
27. Substrate temperature dependence of properties of ZnO thin films deposited by LP-MOCVD
28. Effect of Additional HCl on the Surface Morphology of High Quality GaN on Sapphire by HVPE
29. Prepare of ZnAl2O4/α -Al2O3 complex substrates and growth of GaN films
30. Extraction of Polarization-Induced Charge Density in Modulation-Doped AlxGa1−nxN/GaN Heterostructures Based on Schottky C- V Simulation
31. Study of structure and magnetic properties of Ni-doped ZnO-based DMSs
32. Characterization of 4H-SiC grown on AlN/Si(100) by CVD
33. Study of structures and magnetic properties of single crystalline HVPE–GaMnN films
34. Fabrication and Characterization of Metalferroelectric-GAN Structures
35. Oxidation of Gallium Nitride Epilayers in Dry Oxygen
36. Impact of the device scaling on the low-frequency noise in n-MOSFETs
37. The oxidation of gallium nitride epilayers in dry oxygen
38. Epitaxial Lateral Overgrowth of GaN with Chloride-Based Growth Chemistries in Both Hydride and Metalorganic Vapor Phase Epitaxy
39. Growth of wurtzite GaN films on αAl2O3 substrates using light-radiation heating metal-organic chemical vapor deposition
40. Influence of growth conditions on the incorporation of substitutional C in Si1-x-yGexCy alloy on Si by chemical vapor deposition using C2H4
41. Study of transient photoconductivity of GaN epilayer grown by metalorganic chemical vapor deposition
42. Effects of an AlN passivation layer on the microstructure and electronic properties of AlGaN/GaN heterostructures
43. The solubility of phosphorus in GaN
44. Anti-Weak Localization of the Two Dimensional Electron Gas in Modulation-Doped AlxGa1-xN/GaN Single Quantum Well
45. The Temperature Dependence of In Desorption during InN Growth and Annealing
46. Simulation of the MOCVD Reactor for ZnO Growth
47. Surface Morphology Evolution during LP-MOCVD Growth of ZnO on Sapphire
48. Infrared Studies of GaN1-xPx Ternary Alloys
49. Structural evolution of SiN x films deposited by ECR and its light emission
50. A novel In xGa 1− xN/InN heterostructure field-effect transistor with extremely high two-dimensional electron-gas sheet density
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