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We propose wedge type light guide plate (LGP) adopting twin inclined cylindrical surfaces (TICS) at the incident part of a LGP. It has higher optical efficiency than conventional wedge type LGP. In dimension of LGP which the thickness of incident part is 1.5 mm and that of luminance part is 0.7 mm, the optical efficiency of wedge type LGP adopting TICS is expected to be 96% in comparison with a normal flat LGP. In addition, there is an advantage to reduce the non-uniformity of vicinity of light emitted diodes (LEDs) by TICS reflecting light laterally. However, it is necessary that the LED centers are aligned with the intersections of TICS. The misalignment of LED causes non-uniformity of optical profile that is slightly larger than a normal LGP. [ABSTRACT FROM AUTHOR]

We have investigated light scattering behavior in In-Plane Switching mode panel and have built up the optical simulation method. It will enable to simulate the luminance of black level over viewing angle quantitatively. We have developed 10.25" In-Plane Switching mode TFT-LCD with wide viewing angle by use of the simulation method. [ABSTRACT FROM AUTHOR]

We studied a new display system that realizes a Maxwellian view. The system is composed of a base display and a fly-eye lens with micro-pinholes. This forms ray intersecting points of diameter of 0.8mm at a viewing distance of 280mm. It was confirmed that the new display system can extend the depth of field of the human eye system, where the observer sets the ray intersecting point at his pupil. [ABSTRACT FROM AUTHOR]

The in-plane switching(IPS)mode liquid crystal display(LCD)panels with different pretilt angles and alignment directions are prepared, and their electro-optical properties and viewing angle characteristics are examined. The examination shows that parallel alignment with a pretilt angle of about 3∗brings about a panel with very wide viewing angle characteristics and little color shift in relation to that viewing angle. The pretilt angle of 3∗can be achieved by conventional alignment film for Twisted Nematic mode LCD, and higher productivity of IPS-mode LCD panels in consequently expected. [ABSTRACT FROM AUTHOR]

Novel stacked cell capacitors with (Ba,Sr)TiO3 (BST) films were prepared as dielectrics for Gbit-scale DRAMs. The BST films were deposited by the liquid source chemical vapor deposition (CVD) method, and Ru was used as an electrode material for storage nodes and cell plates. For BST films on Ru electrodes, a two-step film deposition process by repetition of low-temperature deposition and subsequent-high temperature annealing was shown to result in smooth surface morphology and conformal step coverage; in addition, no residues were formed on the mask side walls during Ru etching in oxygen-containing plasmas. The surfaces of the Ru electrodes were not oxidized during the BST deposition and annealing process, and these results indicate that Ru is a most possible material for capacitor electrodes. The electrical properties obtained for the 25-nm-thick BST films on Ru electrodes are: leak current density 2 × 10-8 A/cm2, silicon dioxide equivalent thickness 0.5 nm. Using these techniques, minute stacked capacitors were fabricated with storage nodes 0.24 μm wide, 0.60 μm deep, and 0.2 μm high (spaced 0.14 mm apart), and their applicability for 1-Gbit DRAM memory cells was examined. © 1997 Scripta Technica, Inc., Electron Comm Jpn Pt 2, 80(5): 70–78, 1997 [ABSTRACT FROM AUTHOR]

The structure and the flashback critiera of premixed flames of stoichiometric methane-propane-, town gas-and kerosene-air supported on a wire mesh were studied under atmospheric pressure over a wide range of mixture temperature T0 and mass flow rate G by measuring flame and wire mesh temperatures Tf and Tm. It has been found that Tf is determined solely by G regardless of To and wire mesh dimensions. Furthermore, the conditions of flashback to the unburned mixture behind the mesh can be explained by the velocity balance between the burning velocity sum of the imaginary flat flame at temperature Tm and the mean mixture flow velocity Uo, according to: where Km and Kc are the constants characteristic of the mixture strength and the mesh dimensions, respectively. For kerosene- air mixture, the overall activation energy E obtained from the flashback criterion is much smaller than that of normal high temperature flames, which suggests that the reaction processes in the flashback are different from those of normal flames. [ABSTRACT FROM PUBLISHER]

High-dielectric-constant (Ba, Sr)TiO3 [BST] films were deposited by the liquid source chemical vapor deposition (CVD) method. The system consisted of a single-wafer, low-pressure thermal CVD reactor, a vaporizer for liquid source materials, and a shower-type gas nozzle head, giving stable BST film deposition on a 6-in. diam. substrate with uniform thickness and uniform chemical composition ratio. The source materials employed were Ba(DPM)2, Sr(DPM)2, and TiO(DPM)2 dissolved in tetrahydrofuran (THF), resulting in conformal step coverage of BST films at lowered substrate temperatures, where DPM denotes dipivaloylmethanate. Moreover, the two-step deposition technique was developed to restart protrusions formed on BST film surfaces at low temperatures, where the BST films consisted of a buffer layer and a main layer; the buffer layer was a layer about 60 Å thick of CVD-BST film annealed in N2. Thus, the two-step CVD deposition of BST films on Pt and Ru electrodes achieved an equivalent SiO2 thickness of teq ∼ 0.5 nm, a leakage current of JL ∼ 1.0 × 10-8 A/cm2 (at +1.1 V), and a dielectric loss of tan δ ∼ 0.01 at a total film thickness of 250 Å, along with conformal coverage of 80% for a trench with an aspect ratio of 0.65. Then, for BST films deposited on patterned electrodes 0.24 μm wide, 0.60 μm deep, and 0.15 μm high (each spaced by 0.14 μm), the capacitance was demonstrated to be increased without significant deterioration of the leakage current: the capacitance was increased in comparison with that for films on flat electrodes, by a factor corresponding to the increase in surface area due to sidewalls of storage-node-like pattern features. This capacitance increase reflects the most characteristic advantage of CVD, an excellent step coverage on microscopic pattern features. These electrical properties satisfy the specifications for capacitors for Gb-scale dynamic random access memories (DRAMs), giving a storage capacitance of more than 25 fF/cell for a stacked capacitor having a storage node 0.2 to 0.3 μm high. © 1998 Scripta Technica, Electr Eng Jpn, 125(1): 47–54, 1998 [ABSTRACT FROM AUTHOR]