1. Ferroelectricity in layered bismuth oxide down to 1 nanometer
- Author
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Yang, Qianqian, Hu, Jingcong, Fang, Yue-Wen, Jia, Yueyang, Yang, Rui, Deng, Shiqing, Lu, Yue, Dieguez, Oswaldo, Fan, Longlong, Zheng, Dongxing, Zhang, Xixiang, Dong, Yongqi, Luo, Zhenlin, Wang, Zhen, Wang, Huanhua, Sui, Manling, Xing, Xianran, Chen, Jun, Tian, Jianjun, and Zhang, Linxing
- Subjects
Condensed Matter - Materials Science ,Condensed Matter - Mesoscale and Nanoscale Physics - Abstract
Atomic-scale ferroelectrics are of great interest for high-density electronics, particularly field-effect transistors, low-power logic, and nonvolatile memories. We devised a film with a layered structure of bismuth oxide that can stabilize the ferroelectric state down to 1 nanometer through samarium bondage. This film can be grown on a variety of substrates with a cost-effective chemical solution deposition. We observed a standard ferroelectric hysteresis loop down to a thickness of ~1 nanometer. The thin films with thicknesses that range from 1 to 4.56 nanometers possess a relatively large remanent polarization from 17 to 50 microcoulombs per square centimeter. We verified the structure with first-principles calculations, which also pointed to the material being a lone pair-driven ferroelectric material. The structure design of the ultrathin ferroelectric films has great potential for the manufacturing of atomic-scale electronic devices., Comment: preprint, 27 pages, 5 figures
- Published
- 2025
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