1. Ultrahigh thermoelectric properties of p‐type BixSb2−xTe3 thin films with exceptional flexibility for wearable energy harvesting
- Author
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Zhuang‐Hao Zheng, Yi‐Ming Zhong, Yi‐Liu Li, Mohammad Nisar, Adil Mansoor, Fu Li, Shuo Chen, Guang‐Xing Liang, Ping Fan, Dongyan Xu, Meng Wei, and Yue‐Xing Chen
- Subjects
BixSb2−xTe3 ,electrical transport properties ,flexibility ,thermoelectric ,Production of electric energy or power. Powerplants. Central stations ,TK1001-1841 - Abstract
Abstract Use of a flexible thermoelectric source is a feasible approach to realizing self‐powered wearable electronics and the Internet of Things. Inorganic thin films are promising candidates for fabricating flexible power supply, but obtaining high‐thermoelectric‐performance thin films remains a big challenge. In the present work, a p‐type BixSb2−xTe3 thin film is designed with a high figure of merit of 1.11 at 393 K and exceptional flexibility (less than 5% increase in resistance after 1000 cycles of bending at a radius of ∼5 mm). The favorable comprehensive performance of the BixSb2−xTe3 flexible thin film is due to its excellent crystallinity, optimized carrier concentration, and low elastic modulus, which have been verified by experiments and theoretical calculations. Further, a flexible device is fabricated using the prepared p‐type BixSb2−xTe3 and n‐type Ag2Se thin films. Consequently, an outstanding power density of ∼1028 μW cm−2 is achieved at a temperature difference of 25 K. This work extends a novel concept to the fabrication of high‐performance flexible thin films and devices for wearable energy harvesting.
- Published
- 2024
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